These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
5. Material Synthesis and Device Aspects of Monolayer Tungsten Diselenide. Yao Z; Liu J; Xu K; Chow EKC; Zhu W Sci Rep; 2018 Mar; 8(1):5221. PubMed ID: 29588469 [TBL] [Abstract][Full Text] [Related]
6. Field effect transistors with current saturation and voltage gain in ultrathin ReS2. Corbet CM; McClellan C; Rai A; Sonde SS; Tutuc E; Banerjee SK ACS Nano; 2015 Jan; 9(1):363-70. PubMed ID: 25514177 [TBL] [Abstract][Full Text] [Related]
7. Low-Frequency Noise Characteristics in Multi-Layer WSe₂ Field Effect Transistors with Different Contact Metals. Kang WM; Cho IT; Roh J; Lee C; Lee JH J Nanosci Nanotechnol; 2019 Oct; 19(10):6422-6428. PubMed ID: 31026972 [TBL] [Abstract][Full Text] [Related]
8. Interface studies of well-controlled polymer bilayers and field-effect transistors prepared by a mixed-solvent method. Zhang F; Hu Y; Lou Z; Xin X; Zhang M; Hou Y; Teng F RSC Adv; 2018 Mar; 8(21):11272-11279. PubMed ID: 35542823 [TBL] [Abstract][Full Text] [Related]
9. WS Pelella A; Kumar A; Intonti K; Durante O; De Stefano S; Han X; Li Z; Guo Y; Giubileo F; Camilli L; Passacantando M; Zak A; Di Bartolomeo A Small; 2024 Jul; ():e2403965. PubMed ID: 38994696 [TBL] [Abstract][Full Text] [Related]
10. Device perspective for black phosphorus field-effect transistors: contact resistance, ambipolar behavior, and scaling. Du Y; Liu H; Deng Y; Ye PD ACS Nano; 2014 Oct; 8(10):10035-42. PubMed ID: 25314022 [TBL] [Abstract][Full Text] [Related]
11. Black phosphorus transistors with van der Waals-type electrical contacts. Quhe R; Wang Y; Ye M; Zhang Q; Yang J; Lu P; Lei M; Lu J Nanoscale; 2017 Sep; 9(37):14047-14057. PubMed ID: 28894869 [TBL] [Abstract][Full Text] [Related]
12. A WSe Di Bartolomeo A; Urban F; Passacantando M; McEvoy N; Peters L; Iemmo L; Luongo G; Romeo F; Giubileo F Nanoscale; 2019 Jan; 11(4):1538-1548. PubMed ID: 30629066 [TBL] [Abstract][Full Text] [Related]
13. Tunable Polarity Behavior and High-Performance Photosensitive Characteristics in Schottky-Barrier Field-Effect Transistors Based on Multilayer WS Yang Y; Huang L; Xiao Y; Li Y; Zhao Y; Luo D; Tao L; Zhang M; Feng T; Zheng Z; Feng X; Mu Z; Li J ACS Appl Mater Interfaces; 2018 Jan; 10(3):2745-2751. PubMed ID: 29271630 [TBL] [Abstract][Full Text] [Related]
14. A comparative study on top-gated and bottom-gated multilayer MoS Zou X; Xu J; Huang H; Zhu Z; Wang H; Li B; Liao L; Fang G Nanotechnology; 2018 Jun; 29(24):245201. PubMed ID: 29582776 [TBL] [Abstract][Full Text] [Related]
15. Graphene as a Schottky Barrier Contact to AlGaN/GaN Heterostructures. Dub M; Sai P; Przewłoka A; Krajewska A; Sakowicz M; Prystawko P; Kacperski J; Pasternak I; Cywiński G; But D; Knap W; Rumyantsev S Materials (Basel); 2020 Sep; 13(18):. PubMed ID: 32957632 [TBL] [Abstract][Full Text] [Related]
16. High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors. Movva HC; Rai A; Kang S; Kim K; Fallahazad B; Taniguchi T; Watanabe K; Tutuc E; Banerjee SK ACS Nano; 2015 Oct; 9(10):10402-10. PubMed ID: 26343531 [TBL] [Abstract][Full Text] [Related]
17. Back gated multilayer InSe transistors with enhanced carrier mobilities via the suppression of carrier scattering from a dielectric interface. Feng W; Zheng W; Cao W; Hu P Adv Mater; 2014 Oct; 26(38):6587-93. PubMed ID: 25167845 [TBL] [Abstract][Full Text] [Related]
18. Gate Tunable Transport in Graphene/MoS₂/(Cr/Au) Vertical Field-Effect Transistors. Nazir G; Khan MF; Aftab S; Afzal AM; Dastgeer G; Rehman MA; Seo Y; Eom J Nanomaterials (Basel); 2017 Dec; 8(1):. PubMed ID: 29283377 [TBL] [Abstract][Full Text] [Related]
19. Effects of HfO Xu J; Wen M; Zhao X; Liu L; Song X; Lai PT; Tang WM Nanotechnology; 2018 Aug; 29(34):345201. PubMed ID: 29808825 [TBL] [Abstract][Full Text] [Related]
20. Impact of contact resistance on the electrical properties of MoS Giannazzo F; Fisichella G; Piazza A; Di Franco S; Greco G; Agnello S; Roccaforte F Beilstein J Nanotechnol; 2017; 8():254-263. PubMed ID: 28243564 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]