These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
132 related articles for article (PubMed ID: 30402641)
1. Defect-free SnTe topological crystalline insulator nanowires grown by molecular beam epitaxy on graphene. Sadowski J; Dziawa P; Kaleta A; Kurowska B; Reszka A; Story T; Kret S Nanoscale; 2018 Nov; 10(44):20772-20778. PubMed ID: 30402641 [TBL] [Abstract][Full Text] [Related]
2. Synthesis of SnTe nanoplates with {100} and {111} surfaces. Shen J; Jung Y; Disa AS; Walker FJ; Ahn CH; Cha JJ Nano Lett; 2014 Jul; 14(7):4183-8. PubMed ID: 24910959 [TBL] [Abstract][Full Text] [Related]
3. Indirect Interlayer Bonding in Graphene-Topological Insulator van der Waals Heterostructure: Giant Spin-Orbit Splitting of the Graphene Dirac States. Rajput S; Li YY; Weinert M; Li L ACS Nano; 2016 Sep; 10(9):8450-6. PubMed ID: 27617796 [TBL] [Abstract][Full Text] [Related]
4. Revisiting the van der Waals Epitaxy in the Case of (Bi Mulder L; Wielens DH; Birkhölzer YA; Brinkman A; Concepción O Nanomaterials (Basel); 2022 May; 12(11):. PubMed ID: 35683648 [TBL] [Abstract][Full Text] [Related]
5. Spin-filtered edge states with an electrically tunable gap in a two-dimensional topological crystalline insulator. Liu J; Hsieh TH; Wei P; Duan W; Moodera J; Fu L Nat Mater; 2014 Feb; 13(2):178-83. PubMed ID: 24362950 [TBL] [Abstract][Full Text] [Related]
7. Van der Waals Epitaxy of Two-Dimensional MoS2-Graphene Heterostructures in Ultrahigh Vacuum. Miwa JA; Dendzik M; Grønborg SS; Bianchi M; Lauritsen JV; Hofmann P; Ulstrup S ACS Nano; 2015 Jun; 9(6):6502-10. PubMed ID: 26039108 [TBL] [Abstract][Full Text] [Related]
8. Robust 2D topological insulators in van der Waals heterostructures. Kou L; Wu SC; Felser C; Frauenheim T; Chen C; Yan B ACS Nano; 2014 Oct; 8(10):10448-54. PubMed ID: 25226453 [TBL] [Abstract][Full Text] [Related]
9. Spiral growth without dislocations: molecular beam epitaxy of the topological insulator Bi2Se3 on epitaxial graphene/SiC(0001). Liu Y; Weinert M; Li L Phys Rev Lett; 2012 Mar; 108(11):115501. PubMed ID: 22540484 [TBL] [Abstract][Full Text] [Related]
10. Single crystalline nanostructures of topological crystalline insulator SnTe with distinct facets and morphologies. Li Z; Shao S; Li N; McCall K; Wang J; Zhang SX Nano Lett; 2013; 13(11):5443-8. PubMed ID: 24138562 [TBL] [Abstract][Full Text] [Related]
11. Structural and optical properties of self-catalytic GaAs:Mn nanowires grown by molecular beam epitaxy on silicon substrates. Gas K; Sadowski J; Kasama T; Siusys A; Zaleszczyk W; Wojciechowski T; Morhange JF; Altintaş A; Xu HQ; Szuszkiewicz W Nanoscale; 2013 Aug; 5(16):7410-8. PubMed ID: 23832244 [TBL] [Abstract][Full Text] [Related]
12. Thickness-dependent Dirac dispersions of few-layer topological insulators supported by metal substrate. Jeon JH; Kim H; Jang WJ; Seo J; Kahng SJ Nanotechnology; 2017 May; 28(21):215207. PubMed ID: 28474604 [TBL] [Abstract][Full Text] [Related]
13. Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene. Fernández-Garrido S; Ramsteiner M; Gao G; Galves LA; Sharma B; Corfdir P; Calabrese G; de Souza Schiaber Z; Pfüller C; Trampert A; Lopes JMJ; Brandt O; Geelhaar L Nano Lett; 2017 Sep; 17(9):5213-5221. PubMed ID: 28654280 [TBL] [Abstract][Full Text] [Related]
15. Foreign-catalyst-free growth of InAs/InSb axial heterostructure nanowires on Si (111) by molecular-beam epitaxy. So H; Pan D; Li L; Zhao J Nanotechnology; 2017 Mar; 28(13):135704. PubMed ID: 28256450 [TBL] [Abstract][Full Text] [Related]
16. Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene. Kim J; Bayram C; Park H; Cheng CW; Dimitrakopoulos C; Ott JA; Reuter KB; Bedell SW; Sadana DK Nat Commun; 2014 Sep; 5():4836. PubMed ID: 25208642 [TBL] [Abstract][Full Text] [Related]
17. Topological surface transport properties of single-crystalline SnTe nanowire. Safdar M; Wang Q; Mirza M; Wang Z; Xu K; He J Nano Lett; 2013; 13(11):5344-9. PubMed ID: 24175637 [TBL] [Abstract][Full Text] [Related]