150 related articles for article (PubMed ID: 30424140)
1. High Temperature AlGaN/GaN Membrane Based Pressure Sensors.
Gajula D; Jahangir I; Koley G
Micromachines (Basel); 2018 Apr; 9(5):. PubMed ID: 30424140
[TBL] [Abstract][Full Text] [Related]
2. Investigation of AlGaN/GaN HFET and VO
Bayram F; Gajula D; Khan D; Koley G
Micromachines (Basel); 2020 Sep; 11(9):. PubMed ID: 32962251
[TBL] [Abstract][Full Text] [Related]
3. Response Enhancement of Pt-AlGaN/GaN HEMT Gas Sensors by Thin AlGaN Barrier with the Source-Connected Gate Configuration at High Temperature.
Vuong TA; Cha HY; Kim H
Micromachines (Basel); 2021 May; 12(5):. PubMed ID: 34068454
[TBL] [Abstract][Full Text] [Related]
4. Gate leakage current induced trapping in AlGaN/GaN Schottky-gate HFETs and MISHFETs.
Liao WC; Chen YL; Chen ZX; Chyi JI; Hsin YM
Nanoscale Res Lett; 2014; 9(1):474. PubMed ID: 25258601
[TBL] [Abstract][Full Text] [Related]
5. Optimization of gate geometry towards high-sensitivity AlGaN/GaN pH sensor.
Zhang H; Tu J; Yang S; Sheng K; Wang P
Talanta; 2019 Dec; 205():120134. PubMed ID: 31450402
[TBL] [Abstract][Full Text] [Related]
6. High Sensitive pH Sensor Based on AlInN/GaN Heterostructure Transistor.
Dong Y; Son DH; Dai Q; Lee JH; Won CH; Kim JG; Chen D; Lee JH; Lu H; Zhang R; Zheng Y
Sensors (Basel); 2018 Apr; 18(5):. PubMed ID: 29695112
[TBL] [Abstract][Full Text] [Related]
7. High-Sensitivity Hydrogen Sensor Based on AlGaN/GaN Heterojunction Field-Effect Transistor.
Choi JH; Vuong TA; Kim H; Cha HY
J Nanosci Nanotechnol; 2020 Jul; 20(7):4404-4408. PubMed ID: 31968484
[TBL] [Abstract][Full Text] [Related]
8. Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor.
Pérez-Tomás A; Catalàn G; Fontserè A; Iglesias V; Chen H; Gammon PM; Jennings MR; Thomas M; Fisher CA; Sharma YK; Placidi M; Chmielowska M; Chenot S; Porti M; Nafría M; Cordier Y
Nanotechnology; 2015 Mar; 26(11):115203. PubMed ID: 25719801
[TBL] [Abstract][Full Text] [Related]
9. Ca
Asadnia M; Myers M; Umana-Membreno GA; Sanders TM; Mishra UK; Nener BD; Baker MV; Parish G
Anal Chim Acta; 2017 Sep; 987():105-110. PubMed ID: 28916033
[TBL] [Abstract][Full Text] [Related]
10. Performance Optimization of Nitrogen Dioxide Gas Sensor Based on Pd-AlGaN/GaN HEMTs by Gate Bias Modulation.
Nguyen VC; Kim K; Kim H
Micromachines (Basel); 2021 Apr; 12(4):. PubMed ID: 33916387
[TBL] [Abstract][Full Text] [Related]
11. Detection of HER-3 with an AlGaN/GaN-Based Ion-Sensitive Heterostructure Field Effect Transistor Biosensor.
Wang F; Liu H; Xu Y; Liang Z; Wu Z; Liu Y; Zhang B
Micromachines (Basel); 2023 Jun; 14(6):. PubMed ID: 37374771
[TBL] [Abstract][Full Text] [Related]
12. AlGaN/GaN High Electron Mobility Transistor-Based Biosensor for the Detection of C-Reactive Protein.
Lee HH; Bae M; Jo SH; Shin JK; Son DH; Won CH; Jeong HM; Lee JH; Kang SW
Sensors (Basel); 2015 Jul; 15(8):18416-26. PubMed ID: 26225981
[TBL] [Abstract][Full Text] [Related]
13. High Selectivity Hydrogen Gas Sensor Based on WO
Nguyen VC; Cha HY; Kim H
Sensors (Basel); 2023 Mar; 23(7):. PubMed ID: 37050525
[TBL] [Abstract][Full Text] [Related]
14. Effects of surface oxidation on the pH-dependent surface charge of oxidized aluminum gallium nitride.
Wang J; Li H; Li H; Keller S; Mishra UK; Nener BD; Parish G; Atkin R
J Colloid Interface Sci; 2021 Dec; 603():604-614. PubMed ID: 34217948
[TBL] [Abstract][Full Text] [Related]
15. Sensitivity of 2DEG-based Hall-effect sensors at high temperatures.
Alpert HS; Chapin CA; Dowling KM; Benbrook SR; Köck H; Ausserlechner U; Senesky DG
Rev Sci Instrum; 2020 Feb; 91(2):025003. PubMed ID: 32113418
[TBL] [Abstract][Full Text] [Related]
16. Potassium selective chemically modified field effect transistors based on AlGaN/GaN two-dimensional electron gas heterostructures.
Alifragis Y; Volosirakis A; Chaniotakis NA; Konstantinidis G; Adikimenakis A; Georgakilas A
Biosens Bioelectron; 2007 Jun; 22(12):2796-801. PubMed ID: 17098415
[TBL] [Abstract][Full Text] [Related]
17. Low limit of detection of the AlGaN/GaN-based sensor by the Kelvin connection detection technique.
Zhang H; Gan Y; Yang S; Sheng K; Wang P
Microsyst Nanoeng; 2021; 7():51. PubMed ID: 34567764
[TBL] [Abstract][Full Text] [Related]
18. Highly selective and sensitive phosphate anion sensors based on AlGaN/GaN high electron mobility transistors functionalized by ion imprinted polymer.
Jia X; Chen D; Bin L; Lu H; Zhang R; Zheng Y
Sci Rep; 2016 Jun; 6():27728. PubMed ID: 27278795
[TBL] [Abstract][Full Text] [Related]
19. Investigation of Stability and Power Consumption of an AlGaN/GaN Heterostructure Hydrogen Gas Sensor Using Different Bias Conditions.
Choi JH; Kim H; Sung HK; Cha HY
Sensors (Basel); 2019 Dec; 19(24):. PubMed ID: 31888143
[TBL] [Abstract][Full Text] [Related]
20. Piezotronic effect in AlGaN/AlN/GaN heterojunction nanowires used as a flexible strain sensor.
Dong J; Chen L; Yang Y; Wang X
Beilstein J Nanotechnol; 2020; 11():1847-1853. PubMed ID: 33364143
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]