These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

196 related articles for article (PubMed ID: 30425903)

  • 1. Exploring the photoleakage current and photoinduced negative bias instability in amorphous InGaZnO thin-film transistors with various active layer thicknesses.
    Wang D; Furuta M
    Beilstein J Nanotechnol; 2018; 9():2573-2580. PubMed ID: 30425903
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Suppression of degradation induced by negative gate bias and illumination stress in amorphous InGaZnO thin-film transistors by applying negative drain bias.
    Wang D; Hung MP; Jiang J; Toda T; Furuta M
    ACS Appl Mater Interfaces; 2014 Apr; 6(8):5713-8. PubMed ID: 24689829
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses.
    Wang D; Zhao W; Li H; Furuta M
    Materials (Basel); 2018 Apr; 11(4):. PubMed ID: 29621154
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Quantitative analysis of annealing-induced instabilities of photo-leakage current and negative-bias-illumination-stress in a-InGaZnO thin-film transistors.
    Wang D; Furuta M
    Beilstein J Nanotechnol; 2019; 10():1125-1130. PubMed ID: 33614381
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Influence of Passivation Layers on Positive Gate Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors.
    Zhou Y; Dong C
    Micromachines (Basel); 2018 Nov; 9(11):. PubMed ID: 30453615
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Graded Channel Junctionless InGaZnO Thin-Film Transistors with Both High Transporting Properties and Good Bias Stress Stability.
    Liu J; Guo J; Yang W; Wang C; Yuan B; Liu J; Wu Z; Zhang Q; Liu D; Chen H; Yu Y; Liu S; Shao G; Yao Z
    ACS Appl Mater Interfaces; 2020 Sep; 12(39):43950-43957. PubMed ID: 32886486
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Ultra-thin gate insulator of atomic-layer-deposited AlO
    Li J; Guan Y; Li J; Zhang Y; Zhang Y; Chan M; Wang X; Lu L; Zhang S
    Nanotechnology; 2023 Apr; 34(26):. PubMed ID: 36962937
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Improved Mobility and Bias Stability of Thin Film Transistors Using the Double-Layer a-InGaZnO/a-InGaZnO:N Channel.
    Yu H; Zhang L; Li XH; Xu HY; Liu YC
    J Nanosci Nanotechnol; 2016 Apr; 16(4):3659-63. PubMed ID: 27451684
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Analysis of Threshold Voltage Shift for Full V
    Kim JH; Jang JT; Bae JH; Choi SJ; Kim DM; Kim C; Kim Y; Kim DH
    Micromachines (Basel); 2021 Mar; 12(3):. PubMed ID: 33808738
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Enhanced Light Stability of InGaZnO Thin-Film Transistors by Atomic-Layer-Deposited Y
    Jung H; Kim WH; Park BE; Woo WJ; Oh IK; Lee SJ; Kim YC; Myoung JM; Gatineau S; Dussarrat C; Kim H
    ACS Appl Mater Interfaces; 2018 Jan; 10(2):2143-2150. PubMed ID: 29277990
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Electrical Performance and Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors with Buried-Channel Layers.
    Zhang Y; Xie H; Dong C
    Micromachines (Basel); 2019 Nov; 10(11):. PubMed ID: 31739504
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Influence of Channel Surface with Ozone Annealing and UV Treatment on the Electrical Characteristics of Top-Gate InGaZnO Thin-Film Transistors.
    Oh C; Kim T; Ju MW; Kim MY; Park SH; Lee GH; Kim H; Kim S; Kim BS
    Materials (Basel); 2023 Sep; 16(18):. PubMed ID: 37763439
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Near-Ideal Top-Gate Controllability of InGaZnO Thin-Film Transistors by Suppressing Interface Defects with an Ultrathin Atomic Layer Deposited Gate Insulator.
    Li J; Zhang Y; Wang J; Yang H; Zhou X; Chan M; Wang X; Lu L; Zhang S
    ACS Appl Mater Interfaces; 2023 Feb; 15(6):8666-8675. PubMed ID: 36709447
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Effect of Fluorine Diffusion on Amorphous-InGaZnO-Based Thin-Film Transistors.
    Jiang J; Furuta M
    J Nanosci Nanotechnol; 2018 Aug; 18(8):5668-5673. PubMed ID: 29458623
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Role of
    Prasad OK; Mohanty SK; Wu CH; Yu TY; Chang KM
    Nanotechnology; 2021 Jul; 32(39):. PubMed ID: 34144544
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Quantum Confinement Effect in Amorphous In-Ga-Zn-O Heterojunction Channels for Thin-Film Transistors.
    Koretomo D; Hamada S; Magari Y; Furuta M
    Materials (Basel); 2020 Apr; 13(8):. PubMed ID: 32325945
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Effect of Oxygen Content on Current Stress-Induced Instability in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors.
    Choi S; Kim JY; Kang H; Ko D; Rhee J; Choi SJ; Kim DM; Kim DH
    Materials (Basel); 2019 Sep; 12(19):. PubMed ID: 31561545
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Enhanced Reliability of a-IGZO TFTs with a Reduced Feature Size and a Clean Etch-Stopper Layer Structure.
    Chung JM; Wu F; Jeong SW; Kim JH; Xiang Y
    Nanoscale Res Lett; 2019 May; 14(1):165. PubMed ID: 31098841
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Direct Inkjet Printing of Silver Source/Drain Electrodes on an Amorphous InGaZnO Layer for Thin-Film Transistors.
    Ning H; Chen J; Fang Z; Tao R; Cai W; Yao R; Hu S; Zhu Z; Zhou Y; Yang C; Peng J
    Materials (Basel); 2017 Jan; 10(1):. PubMed ID: 28772410
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Improvement of Electrical Characteristics and Stability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using Nitrocellulose Passivation Layer.
    Shin KY; Tak YJ; Kim WG; Hong S; Kim HJ
    ACS Appl Mater Interfaces; 2017 Apr; 9(15):13278-13285. PubMed ID: 28299924
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 10.