These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
169 related articles for article (PubMed ID: 30525674)
41. Determination of n-Type Doping Level in Single GaAs Nanowires by Cathodoluminescence. Chen HL; Himwas C; Scaccabarozzi A; Rale P; Oehler F; Lemaître A; Lombez L; Guillemoles JF; Tchernycheva M; Harmand JC; Cattoni A; Collin S Nano Lett; 2017 Nov; 17(11):6667-6675. PubMed ID: 29035545 [TBL] [Abstract][Full Text] [Related]
42. Nonpolar InGaN/GaN Core-Shell Single Nanowire Lasers. Li C; Wright JB; Liu S; Lu P; Figiel JJ; Leung B; Chow WW; Brener I; Koleske DD; Luk TS; Feezell DF; Brueck SR; Wang GT Nano Lett; 2017 Feb; 17(2):1049-1055. PubMed ID: 28118019 [TBL] [Abstract][Full Text] [Related]
43. Near-Infrared Lasing from Small-Molecule Organic Hemispheres. Wang X; Liao Q; Li H; Bai S; Wu Y; Lu X; Hu H; Shi Q; Fu H J Am Chem Soc; 2015 Jul; 137(29):9289-95. PubMed ID: 26151538 [TBL] [Abstract][Full Text] [Related]
44. Review on photonic properties of nanowires for photovoltaics. Mokkapati S; Jagadish C Opt Express; 2016 Jul; 24(15):17345-58. PubMed ID: 27464182 [TBL] [Abstract][Full Text] [Related]
50. Microscopic gain analysis of modulation-doped GeSn/SiGeSn quantum wells: epitaxial design toward high-temperature lasing. Fujisawa T; Arai M; Saitoh K Opt Express; 2019 Feb; 27(3):2457-2464. PubMed ID: 30732283 [TBL] [Abstract][Full Text] [Related]
51. Threshold reduction and yield improvement of semiconductor nanowire lasers Alanis JA; Chen Q; Lysevych M; Burgess T; Li L; Liu Z; Tan HH; Jagadish C; Parkinson P Nanoscale Adv; 2019 Nov; 1(11):4393-4397. PubMed ID: 36134418 [TBL] [Abstract][Full Text] [Related]
52. Mid-Infrared Lasing of Single Wurtzite InAs Nanowire. Sumikura H; Zhang G; Takiguchi M; Takemura N; Shinya A; Gotoh H; Notomi M Nano Lett; 2019 Nov; 19(11):8059-8065. PubMed ID: 31638818 [TBL] [Abstract][Full Text] [Related]
53. Electrical and Optical Properties of Au-Catalyzed GaAs Nanowires Grown on Si (111) Substrate by Molecular Beam Epitaxy. Wang CY; Hong YC; Ko ZJ; Su YW; Huang JH Nanoscale Res Lett; 2017 Dec; 12(1):290. PubMed ID: 28438011 [TBL] [Abstract][Full Text] [Related]
54. Low-threshold near-infrared lasing at room temperature using low-toxicity Ag Liao C; Tang L; Wang L; Li Y; Xu J; Jia Y Nanoscale; 2020 Nov; 12(42):21879-21884. PubMed ID: 33107539 [TBL] [Abstract][Full Text] [Related]
55. Optical properties of heavily doped GaAs nanowires and electroluminescent nanowire structures. Lysov A; Offer M; Gutsche C; Regolin I; Topaloglu S; Geller M; Prost W; Tegude FJ Nanotechnology; 2011 Feb; 22(8):085702. PubMed ID: 21242617 [TBL] [Abstract][Full Text] [Related]
56. Selective-area epitaxy of pure wurtzite InP nanowires: high quantum efficiency and room-temperature lasing. Gao Q; Saxena D; Wang F; Fu L; Mokkapati S; Guo Y; Li L; Wong-Leung J; Caroff P; Tan HH; Jagadish C Nano Lett; 2014 Sep; 14(9):5206-11. PubMed ID: 25115241 [TBL] [Abstract][Full Text] [Related]
57. Telecom-band lasing in single InP/InAs heterostructure nanowires at room temperature. Zhang G; Takiguchi M; Tateno K; Tawara T; Notomi M; Gotoh H Sci Adv; 2019 Feb; 5(2):eaat8896. PubMed ID: 30801006 [TBL] [Abstract][Full Text] [Related]