34 related articles for article (PubMed ID: 30594986)
21. Growth of dilute nitride GaAsN/GaAs heterostructure nanowires on Si substrates.
Araki Y; Yamaguchi M; Ishikawa F
Nanotechnology; 2013 Feb; 24(6):065601. PubMed ID: 23324475
[TBL] [Abstract][Full Text] [Related]
22. In situ doping of catalyst-free InAs nanowires.
Ghoneim H; Mensch P; Schmid H; Bessire CD; Rhyner R; Schenk A; Rettner C; Karg S; Moselund KE; Riel H; Björk MT
Nanotechnology; 2012 Dec; 23(50):505708. PubMed ID: 23187068
[TBL] [Abstract][Full Text] [Related]
23. Insights into catalysis by gold nanoparticles and their support effects through surface science studies of model catalysts.
Campbell CT; Sharp JC; Yao YX; Karp EM; Silbaugh TL
Faraday Discuss; 2011; 152():227-39; discussion 293-306. PubMed ID: 22455047
[TBL] [Abstract][Full Text] [Related]
24. Bending and bundling of metal-free vertically aligned ZnO nanowires due to electrostatic interaction.
Liu J; Lee S; Lee K; Ahn YH; Park JY; Koh KH
Nanotechnology; 2008 May; 19(18):185607. PubMed ID: 21825695
[TBL] [Abstract][Full Text] [Related]
25. Screw dislocation-driven epitaxial solution growth of ZnO nanowires seeded by dislocations in GaN substrates.
Morin SA; Jin S
Nano Lett; 2010 Sep; 10(9):3459-63. PubMed ID: 20718407
[TBL] [Abstract][Full Text] [Related]
26. P-doping mechanisms in catalyst-free gallium arsenide nanowires.
Dufouleur J; Colombo C; Garma T; Ketterer B; Uccelli E; Nicotra M; Fontcuberta i Morral A
Nano Lett; 2010 May; 10(5):1734-40. PubMed ID: 20373777
[TBL] [Abstract][Full Text] [Related]
27. Phase perfection in zinc Blende and Wurtzite III-V nanowires using basic growth parameters.
Joyce HJ; Wong-Leung J; Gao Q; Tan HH; Jagadish C
Nano Lett; 2010 Mar; 10(3):908-15. PubMed ID: 20131909
[TBL] [Abstract][Full Text] [Related]
28. Control of InAs nanowire growth directions on Si.
Tomioka K; Motohisa J; Hara S; Fukui T
Nano Lett; 2008 Oct; 8(10):3475-80. PubMed ID: 18783279
[TBL] [Abstract][Full Text] [Related]
29. III-V nitride epilayers for photoelectrochemical water splitting: GaPN and GaAsPN.
Deutsch TG; Koval CA; Turner JA
J Phys Chem B; 2006 Dec; 110(50):25297-307. PubMed ID: 17165975
[TBL] [Abstract][Full Text] [Related]
30. Impact of N Incorporation on VLS Growth of GaP(N) Nanowires Utilizing UDMH.
Steidl M; Wu M; Peh K; Kleinschmidt P; Spiecker E; Hannappel T
Nanoscale Res Lett; 2018 Dec; 13(1):417. PubMed ID: 30594986
[TBL] [Abstract][Full Text] [Related]
31. Epitaxial growth of crystal phase quantum dots in III-V semiconductor nanowires.
Lozano MS; Gómez VJ
Nanoscale Adv; 2023 Mar; 5(7):1890-1909. PubMed ID: 36998660
[TBL] [Abstract][Full Text] [Related]
32. Epitaxial growth of 1D GaN-based heterostructures on various substrates for photonic and energy applications.
Abdullah A; Kulkarni MA; Thaalbi H; Tariq F; Ryu SW
Nanoscale Adv; 2023 Feb; 5(4):1023-1042. PubMed ID: 36798492
[TBL] [Abstract][Full Text] [Related]
33.
; ; . PubMed ID:
[No Abstract] [Full Text] [Related]
34.
; ; . PubMed ID:
[No Abstract] [Full Text] [Related]
[Previous] [New Search]