299 related articles for article (PubMed ID: 30676744)
1. Indirect to Direct Gap Crossover in Two-Dimensional InSe Revealed by Angle-Resolved Photoemission Spectroscopy.
Hamer MJ; Zultak J; Tyurnina AV; Zólyomi V; Terry D; Barinov A; Garner A; Donoghue J; Rooney AP; Kandyba V; Giampietri A; Graham A; Teutsch N; Xia X; Koperski M; Haigh SJ; Fal'ko VI; Gorbachev RV; Wilson NR
ACS Nano; 2019 Feb; 13(2):2136-2142. PubMed ID: 30676744
[TBL] [Abstract][Full Text] [Related]
2. Transition metal chalcogenides: ultrathin inorganic materials with tunable electronic properties.
Heine T
Acc Chem Res; 2015 Jan; 48(1):65-72. PubMed ID: 25489917
[TBL] [Abstract][Full Text] [Related]
3. Spin splitting in 2D monochalcogenide semiconductors.
Do DT; Mahanti SD; Lai CW
Sci Rep; 2015 Nov; 5():17044. PubMed ID: 26596907
[TBL] [Abstract][Full Text] [Related]
4. Raman spectroscopy of GaSe and InSe post-transition metal chalcogenides layers.
Molas MR; Tyurnina AV; Zólyomi V; Ott AK; Terry DJ; Hamer MJ; Yelgel C; Babiński A; Nasibulin AG; Ferrari AC; Fal'ko VI; Gorbachev R
Faraday Discuss; 2021 Apr; 227():163-170. PubMed ID: 33325929
[TBL] [Abstract][Full Text] [Related]
5. Direct band gap and strong Rashba effect in van der Waals heterostructures of InSe and Sb single layers.
Fang D; Chen S; Li Y; Monserrat B
J Phys Condens Matter; 2021 Feb; 33(15):. PubMed ID: 33418556
[TBL] [Abstract][Full Text] [Related]
6. The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystals.
Mudd GW; Molas MR; Chen X; Zólyomi V; Nogajewski K; Kudrynskyi ZR; Kovalyuk ZD; Yusa G; Makarovsky O; Eaves L; Potemski M; Fal'ko VI; Patanè A
Sci Rep; 2016 Dec; 6():39619. PubMed ID: 28008964
[TBL] [Abstract][Full Text] [Related]
7. InSe: a two-dimensional material with strong interlayer coupling.
Sun Y; Luo S; Zhao XG; Biswas K; Li SL; Zhang L
Nanoscale; 2018 May; 10(17):7991-7998. PubMed ID: 29610784
[TBL] [Abstract][Full Text] [Related]
8. Formation and Healing of Defects in Atomically Thin GaSe and InSe.
Hopkinson DG; Zólyomi V; Rooney AP; Clark N; Terry DJ; Hamer M; Lewis DJ; Allen CS; Kirkland AI; Andreev Y; Kudrynskyi Z; Kovalyuk Z; Patanè A; Fal'ko VI; Gorbachev R; Haigh SJ
ACS Nano; 2019 May; 13(5):5112-5123. PubMed ID: 30946569
[TBL] [Abstract][Full Text] [Related]
9. Tuning the bandgap of exfoliated InSe nanosheets by quantum confinement.
Mudd GW; Svatek SA; Ren T; Patanè A; Makarovsky O; Eaves L; Beton PH; Kovalyuk ZD; Lashkarev GV; Kudrynskyi ZR; Dmitriev AI
Adv Mater; 2013 Oct; 25(40):5714-8. PubMed ID: 23966225
[TBL] [Abstract][Full Text] [Related]
10. High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe.
Bandurin DA; Tyurnina AV; Yu GL; Mishchenko A; Zólyomi V; Morozov SV; Kumar RK; Gorbachev RV; Kudrynskyi ZR; Pezzini S; Kovalyuk ZD; Zeitler U; Novoselov KS; Patanè A; Eaves L; Grigorieva IV; Fal'ko VI; Geim AK; Cao Y
Nat Nanotechnol; 2017 Mar; 12(3):223-227. PubMed ID: 27870843
[TBL] [Abstract][Full Text] [Related]
11. Electronic structure and optical signatures of semiconducting transition metal dichalcogenide nanosheets.
Zhao W; Ribeiro RM; Eda G
Acc Chem Res; 2015 Jan; 48(1):91-9. PubMed ID: 25515381
[TBL] [Abstract][Full Text] [Related]
12. Indium selenide monolayer: strain-enhanced optoelectronic response and dielectric environment-tunable 2D exciton features.
Amara IB; Hichri A; Jaziri S
J Phys Condens Matter; 2017 Dec; 29(50):505302. PubMed ID: 29171963
[TBL] [Abstract][Full Text] [Related]
13. Spin-orbit coupling in the band structure of monolayer WSe2.
Le D; Barinov A; Preciado E; Isarraraz M; Tanabe I; Komesu T; Troha C; Bartels L; Rahman TS; Dowben PA
J Phys Condens Matter; 2015 May; 27(18):182201. PubMed ID: 25893580
[TBL] [Abstract][Full Text] [Related]
14. Enhancement of photoluminescence and hole mobility in 1- to 5-layer InSe due to the top valence-band inversion: strain effect.
Wu M; Shi JJ; Zhang M; Ding YM; Wang H; Cen YL; Lu J
Nanoscale; 2018 Jun; 10(24):11441-11451. PubMed ID: 29882944
[TBL] [Abstract][Full Text] [Related]
15. Direct Observation of the Band Gap Transition in Atomically Thin ReS
Gehlmann M; Aguilera I; Bihlmayer G; Nemšák S; Nagler P; Gospodarič P; Zamborlini G; Eschbach M; Feyer V; Kronast F; Młyńczak E; Korn T; Plucinski L; Schüller C; Blügel S; Schneider CM
Nano Lett; 2017 Sep; 17(9):5187-5192. PubMed ID: 28759250
[TBL] [Abstract][Full Text] [Related]
16. Photophysics of GaSe/InSe nanoparticle heterojunctions.
Chen XB; Kelley DF
J Phys Chem B; 2006 Dec; 110(50):25259-65. PubMed ID: 17165970
[TBL] [Abstract][Full Text] [Related]
17. Electronic bandstructure and van der Waals coupling of ReSe
Hart LS; Webb JL; Dale S; Bending SJ; Mucha-Kruczynski M; Wolverson D; Chen C; Avila J; Asensio MC
Sci Rep; 2017 Jul; 7(1):5145. PubMed ID: 28698655
[TBL] [Abstract][Full Text] [Related]
18. Electronic Structure, Surface Doping, and Optical Response in Epitaxial WSe2 Thin Films.
Zhang Y; Ugeda MM; Jin C; Shi SF; Bradley AJ; Martín-Recio A; Ryu H; Kim J; Tang S; Kim Y; Zhou B; Hwang C; Chen Y; Wang F; Crommie MF; Hussain Z; Shen ZX; Mo SK
Nano Lett; 2016 Apr; 16(4):2485-91. PubMed ID: 26974978
[TBL] [Abstract][Full Text] [Related]
19. Largely Tunable Band Structures of Few-Layer InSe by Uniaxial Strain.
Song C; Fan F; Xuan N; Huang S; Zhang G; Wang C; Sun Z; Wu H; Yan H
ACS Appl Mater Interfaces; 2018 Jan; 10(4):3994-4000. PubMed ID: 29322766
[TBL] [Abstract][Full Text] [Related]
20. Many-Body Effect and Device Performance Limit of Monolayer InSe.
Wang Y; Fei R; Quhe R; Li J; Zhang H; Zhang X; Shi B; Xiao L; Song Z; Yang J; Shi J; Pan F; Lu J
ACS Appl Mater Interfaces; 2018 Jul; 10(27):23344-23352. PubMed ID: 29916240
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]