140 related articles for article (PubMed ID: 30676752)
1. Room-Temperature Midwavelength Infrared InAsSb Nanowire Photodetector Arrays with Al
Ren D; Azizur-Rahman KM; Rong Z; Juang BC; Somasundaram S; Shahili M; Farrell AC; Williams BS; Huffaker DL
Nano Lett; 2019 May; 19(5):2793-2802. PubMed ID: 30676752
[TBL] [Abstract][Full Text] [Related]
2. Feasibility of achieving high detectivity at short- and mid-wavelength infrared using nanowire-plasmonic photodetectors with p-n heterojunctions.
Ren D; Rong Z; Azizur-Rahman KM; Somasundaram S; Shahili M; Huffaker DL
Nanotechnology; 2019 Jan; 30(4):044002. PubMed ID: 30465548
[TBL] [Abstract][Full Text] [Related]
3. Uncooled Photodetector at Short-Wavelength Infrared Using InAs Nanowire Photoabsorbers on InP with p- n Heterojunctions.
Ren D; Meng X; Rong Z; Cao M; Farrell AC; Somasundaram S; Azizur-Rahman KM; Williams BS; Huffaker DL
Nano Lett; 2018 Dec; 18(12):7901-7908. PubMed ID: 30444964
[TBL] [Abstract][Full Text] [Related]
4. Low Leakage-Current InAsSb Nanowire Photodetectors on Silicon.
Thompson MD; Alhodaib A; Craig AP; Robson A; Aziz A; Krier A; Svensson J; Wernersson LE; Sanchez AM; Marshall AR
Nano Lett; 2016 Jan; 16(1):182-7. PubMed ID: 26675242
[TBL] [Abstract][Full Text] [Related]
5. Room-Temperature Mid-Infrared Emission from Faceted InAsSb Multi Quantum Wells Embedded in InAs Nanowires.
Alhodaib A; Noori YJ; Carrington PJ; Sanchez AM; Thompson MD; Young RJ; Krier A; Marshall ARJ
Nano Lett; 2018 Jan; 18(1):235-240. PubMed ID: 29191016
[TBL] [Abstract][Full Text] [Related]
6. Room-temperature InP/InAsP Quantum Discs-in-Nanowire Infrared Photodetectors.
Karimi M; Jain V; Heurlin M; Nowzari A; Hussain L; Lindgren D; Stehr JE; Buyanova IA; Gustafsson A; Samuelson L; Borgström MT; Pettersson H
Nano Lett; 2017 Jun; 17(6):3356-3362. PubMed ID: 28535059
[TBL] [Abstract][Full Text] [Related]
7. Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al
Black LE; Cavalli A; Verheijen MA; Haverkort JEM; Bakkers EPAM; Kessels WMM
Nano Lett; 2017 Oct; 17(10):6287-6294. PubMed ID: 28885032
[TBL] [Abstract][Full Text] [Related]
8. High Quantum Efficiency Nanopillar Photodiodes Overcoming the Diffraction Limit of Light.
Lee WJ; Senanayake P; Farrell AC; Lin A; Hung CH; Huffaker DL
Nano Lett; 2016 Jan; 16(1):199-204. PubMed ID: 26682745
[TBL] [Abstract][Full Text] [Related]
9. Diameter-Dependent photocurrent in InAsSb nanowire infrared photodetectors.
Svensson J; Anttu N; Vainorius N; Borg BM; Wernersson LE
Nano Lett; 2013 Apr; 13(4):1380-5. PubMed ID: 23464650
[TBL] [Abstract][Full Text] [Related]
10. Optical design of a mid-wavelength infrared InSb nanowire photodetector.
Azizur-Rahman KM; LaPierre RR
Nanotechnology; 2016 Aug; 27(31):315202. PubMed ID: 27324593
[TBL] [Abstract][Full Text] [Related]
11. Defect-free InAsSb nanowire arrays on Si substrates grown by selective-area metal-organic chemical vapor deposition.
Yang X; Du W; Ji X; Zhang X; Yang T
Nanotechnology; 2018 Oct; 29(40):405601. PubMed ID: 29998857
[TBL] [Abstract][Full Text] [Related]
12. Single-Crystalline InGaAs Nanowires for Room-Temperature High-Performance Near-Infrared Photodetectors.
Tan H; Fan C; Ma L; Zhang X; Fan P; Yang Y; Hu W; Zhou H; Zhuang X; Zhu X; Pan A
Nanomicro Lett; 2016; 8(1):29-35. PubMed ID: 30464991
[TBL] [Abstract][Full Text] [Related]
13. Ultralow surface recombination velocity in InP nanowires probed by terahertz spectroscopy.
Joyce HJ; Wong-Leung J; Yong CK; Docherty CJ; Paiman S; Gao Q; Tan HH; Jagadish C; Lloyd-Hughes J; Herz LM; Johnston MB
Nano Lett; 2012 Oct; 12(10):5325-30. PubMed ID: 22962963
[TBL] [Abstract][Full Text] [Related]
14. Highly ordered vertical GaAs nanowire arrays with dry etching and their optical properties.
Dhindsa N; Chia A; Boulanger J; Khodadad I; LaPierre R; Saini SS
Nanotechnology; 2014 Aug; 25(30):305303. PubMed ID: 25008170
[TBL] [Abstract][Full Text] [Related]
15. Intersubband Quantum Disc-in-Nanowire Photodetectors with Normal-Incidence Response in the Long-Wavelength Infrared.
Karimi M; Heurlin M; Limpert S; Jain V; Zeng X; Geijselaers I; Nowzari A; Fu Y; Samuelson L; Linke H; Borgström MT; Pettersson H
Nano Lett; 2018 Jan; 18(1):365-372. PubMed ID: 29256612
[TBL] [Abstract][Full Text] [Related]
16. Ten-Fold Enhancement of InAs Nanowire Photoluminescence Emission with an InP Passivation Layer.
Jurczak P; Zhang Y; Wu J; Sanchez AM; Aagesen M; Liu H
Nano Lett; 2017 Jun; 17(6):3629-3633. PubMed ID: 28535064
[TBL] [Abstract][Full Text] [Related]
17. Sensing Infrared Photons at Room Temperature: From Bulk Materials to Atomic Layers.
Wang P; Xia H; Li Q; Wang F; Zhang L; Li T; Martyniuk P; Rogalski A; Hu W
Small; 2019 Nov; 15(46):e1904396. PubMed ID: 31617328
[TBL] [Abstract][Full Text] [Related]
18. Room temperature GaAsSb single nanowire infrared photodetectors.
Li Z; Yuan X; Fu L; Peng K; Wang F; Fu X; Caroff P; White TP; Hoe Tan H; Jagadish C
Nanotechnology; 2015 Nov; 26(44):445202. PubMed ID: 26451616
[TBL] [Abstract][Full Text] [Related]
19. GaAs/AlGaAs nanowire photodetector.
Dai X; Zhang S; Wang Z; Adamo G; Liu H; Huang Y; Couteau C; Soci C
Nano Lett; 2014 May; 14(5):2688-93. PubMed ID: 24678794
[TBL] [Abstract][Full Text] [Related]
20. Seeding layer assisted selective-area growth of As-rich InAsP nanowires on InP substrates.
Ren D; Farrell AC; Williams BS; Huffaker DL
Nanoscale; 2017 Jun; 9(24):8220-8228. PubMed ID: 28580981
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]