These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

82 related articles for article (PubMed ID: 30679517)

  • 1. Two-Parameter Quasi-Ballistic Transport Model for Nanoscale Transistors.
    Lee JU; Cuduvally R; Dhakras P; Nguyen P; Hughes HL
    Sci Rep; 2019 Jan; 9(1):525. PubMed ID: 30679517
    [TBL] [Abstract][Full Text] [Related]  

  • 2. A quasi-ballistic drain current, charge and capacitance model with positional carrier scattering dependency valid for symmetric DG MOSFETs in nanoscale regime.
    Murnal VR; Vijaya C
    Nano Converg; 2019 Jun; 6(1):19. PubMed ID: 31204436
    [TBL] [Abstract][Full Text] [Related]  

  • 3. A Parametric Study of the Effects of Critical Design Parameters on the Performance of Nanoscale Silicon Devices.
    Malik FK; Talha T; Ahmed F
    Nanomaterials (Basel); 2020 Oct; 10(10):. PubMed ID: 33050124
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Influence of Scattering in Near Ballistic Silicon NanoWire Metal-Oxide-Semiconductor Field Effect Transistor.
    Arafat IS; Balamurugan NB
    J Nanosci Nanotechnol; 2016 Jun; 16(6):6032-6. PubMed ID: 27427667
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Ten- to 50-nm-long quasi-ballistic carbon nanotube devices obtained without complex lithography.
    Javey A; Qi P; Wang Q; Dai H
    Proc Natl Acad Sci U S A; 2004 Sep; 101(37):13408-10. PubMed ID: 15347810
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Properties of short channel ballistic carbon nanotube transistors with ohmic contacts.
    Léonard F; Stewart DA
    Nanotechnology; 2006 Sep; 17(18):4699-705. PubMed ID: 21727600
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Inversion channel diamond metal-oxide-semiconductor field-effect transistor with normally off characteristics.
    Matsumoto T; Kato H; Oyama K; Makino T; Ogura M; Takeuchi D; Inokuma T; Tokuda N; Yamasaki S
    Sci Rep; 2016 Aug; 6():31585. PubMed ID: 27545201
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Low-frequency noise in nanoscale ballistic transistors.
    Tersoff J
    Nano Lett; 2007 Jan; 7(1):194-8. PubMed ID: 17212463
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Non-Maxwell-Boltzmann dependence of channel carrier concentration in a quasi one dimensional charge density wave channel in the ballistic transport regime.
    Biswas S
    J Phys Condens Matter; 2022 Mar; 34(19):. PubMed ID: 35130518
    [TBL] [Abstract][Full Text] [Related]  

  • 10. High-performance field emission based on nanostructured tin selenide for nanoscale vacuum transistors.
    Nguyen HD; Kang JS; Li M; Hu Y
    Nanoscale; 2019 Feb; 11(7):3129-3137. PubMed ID: 30706919
    [TBL] [Abstract][Full Text] [Related]  

  • 11. All-Graphene Three-Terminal-Junction Field-Effect Devices as Rectifiers and Inverters.
    Kim W; Li C; Chekurov N; Arpiainen S; Akinwande D; Lipsanen H; Riikonen J
    ACS Nano; 2015 Jun; 9(6):5666-74. PubMed ID: 25961680
    [TBL] [Abstract][Full Text] [Related]  

  • 12. A New Approach to Modeling Ultrashort Channel Ballistic Nanowire GAA MOSFETs.
    Cheng H; Yang Z; Zhang C; Xie C; Liu T; Wang J; Zhang Z
    Nanomaterials (Basel); 2022 Sep; 12(19):. PubMed ID: 36234526
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Simulation of Z-Shaped Graphene Geometric Diodes Using Particle-in-Cell Monte Carlo Method in the Quasi-Ballistic Regime.
    Stearns J; Moddel G
    Nanomaterials (Basel); 2021 Sep; 11(9):. PubMed ID: 34578677
    [TBL] [Abstract][Full Text] [Related]  

  • 14. A New Analytical Large-Signal Model for Quasi-Ballistic Transport in InGaAs HEMTs Accommodating Dislocation Scattering.
    Wang J; Liu J; Wang J; Zhao Z
    Micromachines (Basel); 2023 May; 14(5):. PubMed ID: 37241646
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Coherent Control of Nanoscale Ballistic Currents in Transition Metal Dichalcogenide ReS2.
    Cui Q; Zhao H
    ACS Nano; 2015 Apr; 9(4):3935-41. PubMed ID: 25765718
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Observation of Strong Reflection of Electron Waves Exiting a Ballistic Channel at Low Energy.
    Vaz CI; Liu C; Campbell JP; Ryan JT; Southwick RG; Gundlach D; Oates AS; Huang R; Cheung KP
    AIP Adv; 2016 Jun; 6(6):. PubMed ID: 27882264
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Self-aligned T-gate high-purity semiconducting carbon nanotube RF transistors operated in quasi-ballistic transport and quantum capacitance regime.
    Che Y; Badmaev A; Jooyaie A; Wu T; Zhang J; Wang C; Galatsis K; Enaya HA; Zhou C
    ACS Nano; 2012 Aug; 6(8):6936-43. PubMed ID: 22768974
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Channel length scaling of MoS2 MOSFETs.
    Liu H; Neal AT; Ye PD
    ACS Nano; 2012 Oct; 6(10):8563-9. PubMed ID: 22957650
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Quasi-Ballistic Heat Conduction due to Lévy Phonon Flights in Silicon Nanowires.
    Anufriev R; Gluchko S; Volz S; Nomura M
    ACS Nano; 2018 Dec; 12(12):11928-11935. PubMed ID: 30418017
    [TBL] [Abstract][Full Text] [Related]  

  • 20. A reliable extraction method for source and drain series resistances in silicon nanowire metal-oxide-semiconductor field-effect-transistors (MOSFETs) based on radio-frequency analysis.
    Hwa JH; Yoon YJ; Lee HG; Yoo GM; Cho ES; Cho S; Lee JH; Kang IM
    J Nanosci Nanotechnol; 2014 Nov; 14(11):8219-24. PubMed ID: 25958504
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 5.