These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
129 related articles for article (PubMed ID: 30696134)
1. InGaAs/InP multi-quantum-well nanowires with a lower optical leakage loss on v-groove-patterned SOI substrates. Li Y; Wang M; Zhou X; Wang P; Yang W; Meng F; Luo G; Yu H; Pan J; Wang W Opt Express; 2019 Jan; 27(2):494-503. PubMed ID: 30696134 [TBL] [Abstract][Full Text] [Related]
2. Monolithically Integrated InGaAs Nanowires on 3D Structured Silicon-on-Insulator as a New Platform for Full Optical Links. Kim H; Farrell AC; Senanayake P; Lee WJ; Huffaker DL Nano Lett; 2016 Mar; 16(3):1833-9. PubMed ID: 26901448 [TBL] [Abstract][Full Text] [Related]
3. Self-Seeded MOCVD Growth and Dramatically Enhanced Photoluminescence of InGaAs/InP Core-Shell Nanowires. Ji X; Chen X; Yang X; Zhang X; Shao J; Yang T Nanoscale Res Lett; 2018 Sep; 13(1):269. PubMed ID: 30187239 [TBL] [Abstract][Full Text] [Related]
4. InGaAs/InP quantum wires grown on silicon with adjustable emission wavelength at telecom bands. Han Y; Li Q; Ng KW; Zhu S; Lau KM Nanotechnology; 2018 Jun; 29(22):225601. PubMed ID: 29517486 [TBL] [Abstract][Full Text] [Related]
5. InGaAs quantum dots grown by molecular beam epitaxy for light emission on Si substrates. Bru-Chevallier C; El Akra A; Pelloux-Gervais D; Dumont H; Canut B; Chauvin N; Regreny P; Gendry M; Patriarche G; Jancu JM; Even J; Noe P; Calvo V; Salem B J Nanosci Nanotechnol; 2011 Oct; 11(10):9153-9. PubMed ID: 22400316 [TBL] [Abstract][Full Text] [Related]
6. Radial Growth Evolution of InGaAs/InP Multi-Quantum-Well Nanowires Grown by Selective-Area Metal Organic Vapor-Phase Epitaxy. Yang I; Zhang X; Zheng C; Gao Q; Li Z; Li L; Lockrey MN; Nguyen H; Caroff P; Etheridge J; Tan HH; Jagadish C; Wong-Leung J; Fu L ACS Nano; 2018 Oct; 12(10):10374-10382. PubMed ID: 30281281 [TBL] [Abstract][Full Text] [Related]
7. InP-In Fonseka HA; Ameruddin AS; Caroff P; Tedeschi D; De Luca M; Mura F; Guo Y; Lysevych M; Wang F; Tan HH; Polimeni A; Jagadish C Nanoscale; 2017 Sep; 9(36):13554-13562. PubMed ID: 28872181 [TBL] [Abstract][Full Text] [Related]
8. Telecom InP/InGaAs nanolaser array directly grown on (001) silicon-on-insulator. Han Y; Ng WK; Xue Y; Li Q; Wong KS; Lau KM Opt Lett; 2019 Feb; 44(4):767-770. PubMed ID: 30767982 [TBL] [Abstract][Full Text] [Related]
9. Multiwavelength Single Nanowire InGaAs/InP Quantum Well Light-Emitting Diodes. Yang I; Li Z; Wong-Leung J; Zhu Y; Li Z; Gagrani N; Li L; Lockrey MN; Nguyen H; Lu Y; Tan HH; Jagadish C; Fu L Nano Lett; 2019 Jun; 19(6):3821-3829. PubMed ID: 31141386 [TBL] [Abstract][Full Text] [Related]
10. The effect of V/III ratio and catalyst particle size on the crystal structure and optical properties of InP nanowires. Paiman S; Gao Q; Tan HH; Jagadish C; Pemasiri K; Montazeri M; Jackson HE; Smith LM; Yarrison-Rice JM; Zhang X; Zou J Nanotechnology; 2009 Jun; 20(22):225606. PubMed ID: 19436086 [TBL] [Abstract][Full Text] [Related]
11. Stages in the catalyst-free InP nanowire growth on silicon (100) by metal organic chemical vapor deposition. Miao G; Zhang D Nanoscale Res Lett; 2012 Jun; 7(1):321. PubMed ID: 22716780 [TBL] [Abstract][Full Text] [Related]
12. 3D Bragg Coherent Diffraction Imaging of Extended Nanowires: Defect Formation in Highly Strained InGaAs Quantum Wells. Hill MO; Schmiedeke P; Huang C; Maddali S; Hu X; Hruszkewycz SO; Finley JJ; Koblmüller G; Lauhon LJ ACS Nano; 2022 Dec; 16(12):20281-20293. PubMed ID: 36378999 [TBL] [Abstract][Full Text] [Related]
13. Template-assisted vapour-liquid-solid growth of InP nanowires on (001) InP and Si substrates. Jafari Jam R; Persson AR; Barrigón E; Heurlin M; Geijselaers I; Gómez VJ; Hultin O; Samuelson L; Borgström MT; Pettersson H Nanoscale; 2020 Jan; 12(2):888-894. PubMed ID: 31833520 [TBL] [Abstract][Full Text] [Related]
14. Monolithic InGaAs Nanowire Array Lasers on Silicon-on-Insulator Operating at Room Temperature. Kim H; Lee WJ; Farrell AC; Morales JSD; Senanayake P; Prikhodko SV; Ochalski TJ; Huffaker DL Nano Lett; 2017 Jun; 17(6):3465-3470. PubMed ID: 28535069 [TBL] [Abstract][Full Text] [Related]
15. Telecom-band multiwavelength vertical emitting quantum well nanowire laser arrays. Zhang X; Zhang F; Yi R; Wang N; Su Z; Zhang M; Zhao B; Li Z; Qu J; M Cairney J; Lu Y; Zhao J; Gan X; Tan HH; Jagadish C; Fu L Light Sci Appl; 2024 Sep; 13(1):230. PubMed ID: 39227364 [TBL] [Abstract][Full Text] [Related]
16. Self-Catalyzed Growth and Characterization of In(As)P Nanowires on InP(111)B Using Metal-Organic Chemical Vapor Deposition. Park JH; Pozuelo M; Setiawan BP; Chung CH Nanoscale Res Lett; 2016 Dec; 11(1):208. PubMed ID: 27094822 [TBL] [Abstract][Full Text] [Related]
17. Selective-area epitaxy of pure wurtzite InP nanowires: high quantum efficiency and room-temperature lasing. Gao Q; Saxena D; Wang F; Fu L; Mokkapati S; Guo Y; Li L; Wong-Leung J; Caroff P; Tan HH; Jagadish C Nano Lett; 2014 Sep; 14(9):5206-11. PubMed ID: 25115241 [TBL] [Abstract][Full Text] [Related]
18. Wurtzite-Phased InP Micropillars Grown on Silicon with Low Surface Recombination Velocity. Li K; Ng KW; Tran TT; Sun H; Lu F; Chang-Hasnain CJ Nano Lett; 2015 Nov; 15(11):7189-98. PubMed ID: 26444034 [TBL] [Abstract][Full Text] [Related]
19. Site-Controlled Growth of Monolithic InGaAs/InP Quantum Well Nanopillar Lasers on Silicon. Schuster F; Kapraun J; Malheiros-Silveira GN; Deshpande S; Chang-Hasnain CJ Nano Lett; 2017 Apr; 17(4):2697-2702. PubMed ID: 28328224 [TBL] [Abstract][Full Text] [Related]
20. Monolithic integration of InP on Si by molten alloy driven selective area epitaxial growth. Viazmitinov DV; Berdnikov Y; Kadkhodazadeh S; Dragunova A; Sibirev N; Kryzhanovskaya N; Radko I; Huck A; Yvind K; Semenova E Nanoscale; 2020 Dec; 12(46):23780-23788. PubMed ID: 33232429 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]