These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

313 related articles for article (PubMed ID: 30801006)

  • 1. Telecom-band lasing in single InP/InAs heterostructure nanowires at room temperature.
    Zhang G; Takiguchi M; Tateno K; Tawara T; Notomi M; Gotoh H
    Sci Adv; 2019 Feb; 5(2):eaat8896. PubMed ID: 30801006
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Diameter-tailored telecom-band luminescence in InP/InAs heterostructure nanowires grown on InP (111)B substrate with continuously-modulated diameter from microscale to nanoscale.
    Zhang G; Tateno K; Sogawa T; Gotoh H
    Nanotechnology; 2018 Apr; 29(15):155202. PubMed ID: 29376842
    [TBL] [Abstract][Full Text] [Related]  

  • 3. InAs quantum dot in a needlelike tapered InP nanowire: a telecom band single photon source monolithically grown on silicon.
    Jaffal A; Redjem W; Regreny P; Nguyen HS; Cueff S; Letartre X; Patriarche G; Rousseau E; Cassabois G; Gendry M; Chauvin N
    Nanoscale; 2019 Nov; 11(45):21847-21855. PubMed ID: 31696191
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Controlled 1.1-1.6 μm luminescence in gold-free multi-stacked InAs/InP heterostructure nanowires.
    Zhang G; Tateno K; Birowosuto MD; Notomi M; Sogawa T; Gotoh H
    Nanotechnology; 2015 Mar; 26(11):115704. PubMed ID: 25712797
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Bridging the Gap between the Nanometer-Scale Bottom-Up and Micrometer-Scale Top-Down Approaches for Site-Defined InP/InAs Nanowires.
    Zhang G; Rainville C; Salmon A; Takiguchi M; Tateno K; Gotoh H
    ACS Nano; 2015 Nov; 9(11):10580-9. PubMed ID: 26348087
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Telecom-Wavelength Bottom-up Nanobeam Lasers on Silicon-on-Insulator.
    Kim H; Lee WJ; Farrell AC; Balgarkashi A; Huffaker DL
    Nano Lett; 2017 Sep; 17(9):5244-5250. PubMed ID: 28759243
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Foreign-catalyst-free growth of InAs/InSb axial heterostructure nanowires on Si (111) by molecular-beam epitaxy.
    So H; Pan D; Li L; Zhao J
    Nanotechnology; 2017 Mar; 28(13):135704. PubMed ID: 28256450
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Density-controlled growth of vertical InP nanowires on Si(111) substrates.
    Jaffal A; Regreny P; Patriarche G; Chauvin N; Gendry M
    Nanotechnology; 2020 Aug; 31(35):354003. PubMed ID: 32428880
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Control and understanding of kink formation in InAs-InP heterostructure nanowires.
    Fahlvik Svensson S; Jeppesen S; Thelander C; Samuelson L; Linke H; Dick KA
    Nanotechnology; 2013 Aug; 24(34):345601. PubMed ID: 23900037
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Zincblende InAs
    Bucci G; Zannier V; Rossi F; Musiał A; Boniecki J; Sęk G; Sorba L
    ACS Appl Mater Interfaces; 2024 May; 16(20):26491-26499. PubMed ID: 38729621
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Bright Single InAsP Quantum Dots at Telecom Wavelengths in Position-Controlled InP Nanowires: The Role of the Photonic Waveguide.
    Haffouz S; Zeuner KD; Dalacu D; Poole PJ; Lapointe J; Poitras D; Mnaymneh K; Wu X; Couillard M; Korkusinski M; Schöll E; Jöns KD; Zwiller V; Williams RL
    Nano Lett; 2018 May; 18(5):3047-3052. PubMed ID: 29616557
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Mid-Infrared Lasing of Single Wurtzite InAs Nanowire.
    Sumikura H; Zhang G; Takiguchi M; Takemura N; Shinya A; Gotoh H; Notomi M
    Nano Lett; 2019 Nov; 19(11):8059-8065. PubMed ID: 31638818
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Spontaneous emission inhibition of telecom-band quantum disks inside single nanowire on different substrates.
    Birowosuto MD; Zhang G; Yokoo A; Takiguchi M; Notomi M
    Opt Express; 2014 May; 22(10):11713-26. PubMed ID: 24921294
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Nonpolar InGaN/GaN Core-Shell Single Nanowire Lasers.
    Li C; Wright JB; Liu S; Lu P; Figiel JJ; Leung B; Chow WW; Brener I; Koleske DD; Luk TS; Feezell DF; Brueck SR; Wang GT
    Nano Lett; 2017 Feb; 17(2):1049-1055. PubMed ID: 28118019
    [TBL] [Abstract][Full Text] [Related]  

  • 15. InP-In
    Fonseka HA; Ameruddin AS; Caroff P; Tedeschi D; De Luca M; Mura F; Guo Y; Lysevych M; Wang F; Tan HH; Polimeni A; Jagadish C
    Nanoscale; 2017 Sep; 9(36):13554-13562. PubMed ID: 28872181
    [TBL] [Abstract][Full Text] [Related]  

  • 16. InAs/InP radial nanowire heterostructures as high electron mobility devices.
    Jiang X; Xiong Q; Nam S; Qian F; Li Y; Lieber CM
    Nano Lett; 2007 Oct; 7(10):3214-8. PubMed ID: 17867718
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Self-Catalyzed Growth and Characterization of In(As)P Nanowires on InP(111)B Using Metal-Organic Chemical Vapor Deposition.
    Park JH; Pozuelo M; Setiawan BP; Chung CH
    Nanoscale Res Lett; 2016 Dec; 11(1):208. PubMed ID: 27094822
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Ten-Fold Enhancement of InAs Nanowire Photoluminescence Emission with an InP Passivation Layer.
    Jurczak P; Zhang Y; Wu J; Sanchez AM; Aagesen M; Liu H
    Nano Lett; 2017 Jun; 17(6):3629-3633. PubMed ID: 28535064
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Temperature-independent lasing wavelength of highly stacked InAs quantum dot laser fabricated on InP(311)B substrate with Bi irradiation.
    Yanase S; Akahane K; Matsumoto A; Umezawa T; Yamamoto N; Tominaga Y; Kanno A; Maeda T; Sotobayashi H
    Opt Lett; 2023 Jun; 48(12):3287-3290. PubMed ID: 37319083
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Self-Catalyzed Growth of Vertical GaSb Nanowires on InAs Stems by Metal-Organic Chemical Vapor Deposition.
    Ji X; Yang X; Yang T
    Nanoscale Res Lett; 2017 Dec; 12(1):428. PubMed ID: 28655220
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 16.