These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

110 related articles for article (PubMed ID: 30818296)

  • 1. Understanding of proton induced synaptic behaviors in three-terminal synapse device for neuromorphic systems.
    Lee J; Lim S; Kwak M; Song J; Hwang H
    Nanotechnology; 2019 Jun; 30(25):255202. PubMed ID: 30818296
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Enhancement of Synaptic Characteristics Achieved by the Optimization of Proton-Electron Coupling Effect in a Solid-State Electrolyte-Gated Transistor.
    Jin DG; Kim SH; Kim SG; Park J; Park E; Yu HY
    Small; 2021 Jul; 17(30):e2100242. PubMed ID: 34114332
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Artificial synapse network on inorganic proton conductor for neuromorphic systems.
    Zhu LQ; Wan CJ; Guo LQ; Shi Y; Wan Q
    Nat Commun; 2014; 5():3158. PubMed ID: 24452193
    [TBL] [Abstract][Full Text] [Related]  

  • 4. The gate injection-based field-effect synapse transistor with linear conductance update for online training.
    Seo S; Kim B; Kim D; Park S; Kim TR; Park J; Jeong H; Park SO; Park T; Shin H; Kim MS; Choi YK; Choi S
    Nat Commun; 2022 Oct; 13(1):6431. PubMed ID: 36307483
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Investigation and Manipulation of Different Analog Behaviors of Memristor as Electronic Synapse for Neuromorphic Applications.
    Wang C; He W; Tong Y; Zhao R
    Sci Rep; 2016 Mar; 6():22970. PubMed ID: 26971394
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Ultra-low-energy three-dimensional oxide-based electronic synapses for implementation of robust high-accuracy neuromorphic computation systems.
    Gao B; Bi Y; Chen HY; Liu R; Huang P; Chen B; Liu L; Liu X; Yu S; Wong HS; Kang J
    ACS Nano; 2014 Jul; 8(7):6998-7004. PubMed ID: 24884237
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Effect of conductance linearity and multi-level cell characteristics of TaO
    Sung C; Lim S; Kim H; Kim T; Moon K; Song J; Kim JJ; Hwang H
    Nanotechnology; 2018 Mar; 29(11):115203. PubMed ID: 29328054
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Back-propagation operation for analog neural network hardware with synapse components having hysteresis characteristics.
    Ueda M; Nishitani Y; Kaneko Y; Omote A
    PLoS One; 2014; 9(11):e112659. PubMed ID: 25393715
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Excellent synaptic behavior of lithium-based nano-ionic transistor based on optimal WO
    Lee J; Nikam RD; Lim S; Kwak M; Hwang H
    Nanotechnology; 2020 Mar; 31(23):235203. PubMed ID: 32092712
    [TBL] [Abstract][Full Text] [Related]  

  • 10. One transistor-two resistive RAM device for realizing bidirectional and analog neuromorphic synapse devices.
    Lim S; Kwak M; Hwang H
    Nanotechnology; 2019 Nov; 30(45):455201. PubMed ID: 31433790
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Inorganic proton conducting electrolyte coupled oxide-based dendritic transistors for synaptic electronics.
    Wan CJ; Zhu LQ; Zhou JM; Shi Y; Wan Q
    Nanoscale; 2014 May; 6(9):4491-7. PubMed ID: 24643320
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Nanoscale RRAM-based synaptic electronics: toward a neuromorphic computing device.
    Park S; Noh J; Choo ML; Sheri AM; Chang M; Kim YB; Kim CJ; Jeon M; Lee BG; Lee BH; Hwang H
    Nanotechnology; 2013 Sep; 24(38):384009. PubMed ID: 23999317
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Synaptic dynamics: linear model and adaptation algorithm.
    Yousefi A; Dibazar AA; Berger TW
    Neural Netw; 2014 Aug; 56():49-68. PubMed ID: 24867390
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Nitrogen-Induced Enhancement of Synaptic Weight Reliability in Titanium Oxide-Based Resistive Artificial Synapse and Demonstration of the Reliability Effect on the Neuromorphic System.
    Park J; Park E; Kim S; Yu HY
    ACS Appl Mater Interfaces; 2019 Sep; 11(35):32178-32185. PubMed ID: 31392881
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Compliance-Free, Digital SET and Analog RESET Synaptic Characteristics of Sub-Tantalum Oxide Based Neuromorphic Device.
    Abbas Y; Jeon YR; Sokolov AS; Kim S; Ku B; Choi C
    Sci Rep; 2018 Jan; 8(1):1228. PubMed ID: 29352274
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Afferent synaptic drive of rat medial nucleus tractus solitarius neurons: dynamic simulation of graded vesicular mobilization, release, and non-NMDA receptor kinetics.
    Schild JH; Clark JW; Canavier CC; Kunze DL; Andresen MC
    J Neurophysiol; 1995 Oct; 74(4):1529-48. PubMed ID: 8989391
    [TBL] [Abstract][Full Text] [Related]  

  • 17. A Neuromorphic Device Implemented on a Salmon-DNA Electrolyte and its Application to Artificial Neural Networks.
    Kang DH; Kim JH; Oh S; Park HY; Dugasani SR; Kang BS; Choi C; Choi R; Lee S; Park SH; Heo K; Park JH
    Adv Sci (Weinh); 2019 Sep; 6(17):1901265. PubMed ID: 31508292
    [TBL] [Abstract][Full Text] [Related]  

  • 18. All-Solid-State Synaptic Transistors with High-Temperature Stability Using Proton Pump Gating of Strongly Correlated Materials.
    Oh C; Jo M; Son J
    ACS Appl Mater Interfaces; 2019 May; 11(17):15733-15740. PubMed ID: 30968690
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Controlled Growth of Wafer-Scale Transition Metal Dichalcogenides with a Vertical Composition Gradient for Artificial Synapses with High Linearity.
    Tang L; Teng C; Xu R; Zhang Z; Khan U; Zhang R; Luo Y; Nong H; Liu B; Cheng HM
    ACS Nano; 2022 Aug; 16(8):12318-12327. PubMed ID: 35913980
    [TBL] [Abstract][Full Text] [Related]  

  • 20. In-depth analysis on electrical parameters of floating gate IGZO synaptic transistor affecting pattern recognition accuracy.
    Kwon O; Oh S; Park H; Jeong SH; Cho B; Park W
    Nanotechnology; 2022 Feb; ():. PubMed ID: 35139499
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 6.