These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
133 related articles for article (PubMed ID: 30839210)
1. High-Quality Electrostatically Defined Hall Bars in Monolayer Graphene. Ribeiro-Palau R; Chen S; Zeng Y; Watanabe K; Taniguchi T; Hone J; Dean CR Nano Lett; 2019 Apr; 19(4):2583-2587. PubMed ID: 30839210 [TBL] [Abstract][Full Text] [Related]
2. Optical Sensing of Fractional Quantum Hall Effect in Graphene. Popert A; Shimazaki Y; Kroner M; Watanabe K; Taniguchi T; Imamoğlu A; Smoleński T Nano Lett; 2022 Sep; 22(18):7363-7369. PubMed ID: 36124418 [TBL] [Abstract][Full Text] [Related]
3. High-Temperature Quantum Hall Effect in Graphite-Gated Graphene Heterostructure Devices with High Carrier Mobility. Zhou S; Zhu M; Liu Q; Xiao Y; Cui Z; Guo C Nanomaterials (Basel); 2022 Oct; 12(21):. PubMed ID: 36364553 [TBL] [Abstract][Full Text] [Related]
5. Odd- and even-denominator fractional quantum Hall states in monolayer WSe Shi Q; Shih EM; Gustafsson MV; Rhodes DA; Kim B; Watanabe K; Taniguchi T; Papić Z; Hone J; Dean CR Nat Nanotechnol; 2020 Jul; 15(7):569-573. PubMed ID: 32632320 [TBL] [Abstract][Full Text] [Related]
6. Gate-defined quantum confinement in suspended bilayer graphene. Allen MT; Martin J; Yacoby A Nat Commun; 2012 Jul; 3():934. PubMed ID: 22760633 [TBL] [Abstract][Full Text] [Related]
7. Electrostatically Induced Quantum Point Contacts in Bilayer Graphene. Overweg H; Eggimann H; Chen X; Slizovskiy S; Eich M; Pisoni R; Lee Y; Rickhaus P; Watanabe K; Taniguchi T; Fal'ko V; Ihn T; Ensslin K Nano Lett; 2018 Jan; 18(1):553-559. PubMed ID: 29286668 [TBL] [Abstract][Full Text] [Related]
8. Helical edge states and fractional quantum Hall effect in a graphene electron-hole bilayer. Sanchez-Yamagishi JD; Luo JY; Young AF; Hunt BM; Watanabe K; Taniguchi T; Ashoori RC; Jarillo-Herrero P Nat Nanotechnol; 2017 Feb; 12(2):118-122. PubMed ID: 27798608 [TBL] [Abstract][Full Text] [Related]
9. Fractional quantum Hall effect and insulating phase of Dirac electrons in graphene. Du X; Skachko I; Duerr F; Luican A; Andrei EY Nature; 2009 Nov; 462(7270):192-5. PubMed ID: 19829294 [TBL] [Abstract][Full Text] [Related]
10. Gate-defined Josephson junctions in magic-angle twisted bilayer graphene. de Vries FK; Portolés E; Zheng G; Taniguchi T; Watanabe K; Ihn T; Ensslin K; Rickhaus P Nat Nanotechnol; 2021 Jul; 16(7):760-763. PubMed ID: 33941917 [TBL] [Abstract][Full Text] [Related]
11. Quantum transport and field-induced insulating states in bilayer graphene pnp junctions. Jing L; Velasco J; Kratz P; Liu G; Bao W; Bockrath M; Lau CN Nano Lett; 2010 Oct; 10(10):4000-4. PubMed ID: 20863070 [TBL] [Abstract][Full Text] [Related]
12. Observation of even denominator fractional quantum Hall effect in suspended bilayer graphene. Ki DK; Fal'ko VI; Abanin DA; Morpurgo AF Nano Lett; 2014; 14(4):2135-9. PubMed ID: 24611523 [TBL] [Abstract][Full Text] [Related]
13. Tunable transmission of quantum Hall edge channels with full degeneracy lifting in split-gated graphene devices. Zimmermann K; Jordan A; Gay F; Watanabe K; Taniguchi T; Han Z; Bouchiat V; Sellier H; Sacépé B Nat Commun; 2017 Apr; 8():14983. PubMed ID: 28406152 [TBL] [Abstract][Full Text] [Related]
14. Quantum Hall resistance standard in graphene devices under relaxed experimental conditions. Ribeiro-Palau R; Lafont F; Brun-Picard J; Kazazis D; Michon A; Cheynis F; Couturaud O; Consejo C; Jouault B; Poirier W; Schopfer F Nat Nanotechnol; 2015 Nov; 10(11):965-71. PubMed ID: 26344181 [TBL] [Abstract][Full Text] [Related]
15. Quantitative Transport Measurements of Fractional Quantum Hall Energy Gaps in Edgeless Graphene Devices. Polshyn H; Zhou H; Spanton EM; Taniguchi T; Watanabe K; Young AF Phys Rev Lett; 2018 Nov; 121(22):226801. PubMed ID: 30547606 [TBL] [Abstract][Full Text] [Related]
16. Nanoparticle-Induced Anomalous Hall Effect in Graphene. Song G; Ranjbar M; Daughton DR; Kiehl RA Nano Lett; 2019 Oct; 19(10):7112-7118. PubMed ID: 31513412 [TBL] [Abstract][Full Text] [Related]
17. Fabry-Pérot resonances and a crossover to the quantum Hall regime in ballistic graphene quantum point contacts. Ahmad NF; Komatsu K; Iwasaki T; Watanabe K; Taniguchi T; Mizuta H; Wakayama Y; Hashim AM; Morita Y; Moriyama S; Nakaharai S Sci Rep; 2019 Feb; 9(1):3031. PubMed ID: 30816251 [TBL] [Abstract][Full Text] [Related]
18. Voltage Scaling of Graphene Device on SrTiO3 Epitaxial Thin Film. Park J; Kang H; Kang KT; Yun Y; Lee YH; Choi WS; Suh D Nano Lett; 2016 Mar; 16(3):1754-9. PubMed ID: 26855043 [TBL] [Abstract][Full Text] [Related]
19. Quantum Hall Effect in Electron-Doped Black Phosphorus Field-Effect Transistors. Yang F; Zhang Z; Wang NZ; Ye GJ; Lou W; Zhou X; Watanabe K; Taniguchi T; Chang K; Chen XH; Zhang Y Nano Lett; 2018 Oct; 18(10):6611-6616. PubMed ID: 30216077 [TBL] [Abstract][Full Text] [Related]
20. Observation of a fractional quantum hall state at nu = 1/4 in a wide GaAs quantum well. Luhman DR; Pan W; Tsui DC; Pfeiffer LN; Baldwin KW; West KW Phys Rev Lett; 2008 Dec; 101(26):266804. PubMed ID: 19437661 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]