These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

153 related articles for article (PubMed ID: 30841511)

  • 1. Revealing the Role of Sidewall Orientation in Wet Chemical Etching of GaN-Based Ultraviolet Light-Emitting Diodes.
    Wan H; Tang B; Li N; Zhou S; Gui C; Liu S
    Nanomaterials (Basel); 2019 Mar; 9(3):. PubMed ID: 30841511
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Enhanced Light Extraction of Flip-Chip Mini-LEDs with Prism-Structured Sidewall.
    Tang B; Miao J; Liu Y; Wan H; Li N; Zhou S; Gui C
    Nanomaterials (Basel); 2019 Feb; 9(3):. PubMed ID: 30823374
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Enhanced light extraction of nonpolar a-plane (11-20) GaN light emitting diodes on sapphire substrates by photo-enhanced chemical wet etching.
    Jung Y; Kim J; Jang S; Baik KH; Seo YG; Hwang SM
    Opt Express; 2010 Apr; 18(9):9728-32. PubMed ID: 20588822
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Wet chemical etching of semipolar GaN planes to obtain brighter and cost-competitive light emitters.
    Jung S; Song KR; Lee SN; Kim H
    Adv Mater; 2013 Aug; 25(32):4470-6. PubMed ID: 23775709
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Sidewall geometric effect on the performance of AlGaN-based deep-ultraviolet light-emitting diodes.
    Peng KW; Tseng MC; Lin SH; Lai S; Shen MC; Wuu DS; Horng RH; Chen Z; Wu T
    Opt Express; 2022 Dec; 30(26):47792-47800. PubMed ID: 36558698
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Interplay of sidewall damage and light extraction efficiency of micro-LEDs.
    Park JH; Pristovsek M; Cai W; Cheong H; Kumabe T; Lee DS; Seong TY; Amano H
    Opt Lett; 2022 May; 47(9):2250-2253. PubMed ID: 35486772
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Nanorods on surface of GaN-based thin-film LEDs deposited by post-annealing after photo-assisted chemical etching.
    Chen LC; Lin WW; Liu TY
    Nanoscale Res Lett; 2017 Dec; 12(1):35. PubMed ID: 28091950
    [TBL] [Abstract][Full Text] [Related]  

  • 8. GaN nanowire arrays with nonpolar sidewalls for vertically integrated field-effect transistors.
    Yu F; Yao S; Römer F; Witzigmann B; Schimpke T; Strassburg M; Bakin A; Schumacher HW; Peiner E; Wasisto HS; Waag A
    Nanotechnology; 2017 Mar; 28(9):095206. PubMed ID: 28067211
    [TBL] [Abstract][Full Text] [Related]  

  • 9. GaN-based ultraviolet light-emitting diodes with AlN/GaN/InGaN multiple quantum wells.
    Chang HM; Lai WC; Chen WS; Chang SJ
    Opt Express; 2015 Apr; 23(7):A337-45. PubMed ID: 25968799
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Indium gallium nitride-based ultraviolet, blue, and green light-emitting diodes functionalized with shallow periodic hole patterns.
    Jeong H; Salas-Montiel R; Lerondel G; Jeong MS
    Sci Rep; 2017 Apr; 7():45726. PubMed ID: 28374856
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Demonstration of Efficient Ultrathin Side-Emitting InGaN/GaN Flip-Chip Light-Emitting Diodes by Double Side Reflectors.
    Kim TK; Islam ABMH; Cha YJ; Oh SH; Kwak JS
    Nanomaterials (Basel); 2022 Apr; 12(8):. PubMed ID: 35458050
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Light-extraction efficiency control in AlGaN-based deep-ultraviolet flip-chip light-emitting diodes: a comparison to InGaN-based visible flip-chip light-emitting diodes.
    Lee KH; Park HJ; Kim SH; Asadirad M; Moon YT; Kwak JS; Ryou JH
    Opt Express; 2015 Aug; 23(16):20340-9. PubMed ID: 26367889
    [TBL] [Abstract][Full Text] [Related]  

  • 13. InGaN light-emitting diodes with oblique sidewall facets formed by selective growth on SiO₂ patterned GaN film.
    Sheu JK; Chang KH; Tu SJ; Lee ML; Yang CC; Hsu CK; Lai WC
    Opt Express; 2010 Nov; 18 Suppl 4():A562-7. PubMed ID: 21165089
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Improvement in Light Extraction Efficiency of InGaN/GaN Blue Light Emitting Diodes Using Sidewall Texturing.
    Kim JY; Park JR; Kwon MK
    J Nanosci Nanotechnol; 2019 Apr; 19(4):2346-2348. PubMed ID: 30486996
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Improved light extraction efficiency of InGaN-based multi-quantum well light emitting diodes by using a single die growth.
    Park MJ; Kwon KW; Kim YH; Park SH; Kwak JS
    J Nanosci Nanotechnol; 2011 May; 11(5):4484-7. PubMed ID: 21780482
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Novel thin-GaN LED structure adopted micro abraded surface to compare with conventional vertical LEDs in ultraviolet light.
    Chiang YC; Lin CC; Kuo HC
    Nanoscale Res Lett; 2015; 10():182. PubMed ID: 25977655
    [TBL] [Abstract][Full Text] [Related]  

  • 17. InGaN-based nano-pillar light emitting diodes fabricated by self-assembled ITO nano-dots.
    Park MJ; Kwak JS
    J Nanosci Nanotechnol; 2012 May; 12(5):4265-8. PubMed ID: 22852387
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics.
    Sun Y; Kang X; Zheng Y; Wei K; Li P; Wang W; Liu X; Zhang G
    Nanomaterials (Basel); 2020 Apr; 10(4):. PubMed ID: 32244713
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Fabrication of a nano-cone array on a p-GaN surface for enhanced light extraction efficiency from GaN-based tunable wavelength LEDs.
    Soh CB; Wang B; Chua SJ; Lin VK; Tan RJ; Tripathy S
    Nanotechnology; 2008 Oct; 19(40):405303. PubMed ID: 21832613
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Chemical etching behaviors of semipolar (11̄22) and nonpolar (11̄20) gallium nitride films.
    Jung Y; Baik KH; Mastro MA; Hite JK; Eddy CR; Kim J
    Phys Chem Chem Phys; 2014 Aug; 16(30):15780-3. PubMed ID: 24971494
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 8.