These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
3. Enhancing the Responsiveness of Thermoelectric Gas Sensors with Boron-Doped and Thermally Annealed SiGe Thin Films via Low-Pressure Chemical Vapor Deposition. Shin W; Nishibori M; Itoh T; Izu N; Matsubara I Sensors (Basel); 2024 May; 24(10):. PubMed ID: 38793910 [TBL] [Abstract][Full Text] [Related]
4. Strain-driven morphology of Si1-xGex islands grown on Si(100). Pinto N; Murri R; Rinaldi R; Barucca G Micron; 2000 Jun; 31(3):315-21. PubMed ID: 10702982 [TBL] [Abstract][Full Text] [Related]
6. Electrical and Structural Characteristics of Excimer Laser-Crystallized Polycrystalline Si Jang K; Kim Y; Park J; Yi J Materials (Basel); 2019 May; 12(11):. PubMed ID: 31146346 [TBL] [Abstract][Full Text] [Related]
8. Oxidation Mechanism of Si Bae JM; Jeong KS; Lee WJ; Baik M; Park J; Cho MH ACS Appl Mater Interfaces; 2017 Oct; 9(42):37411-37418. PubMed ID: 28984123 [TBL] [Abstract][Full Text] [Related]
9. Enhanced in-plane thermoelectric figure of merit in p-type SiGe thin films by nanograin boundaries. Lu J; Guo R; Dai W; Huang B Nanoscale; 2015 Apr; 7(16):7331-9. PubMed ID: 25824614 [TBL] [Abstract][Full Text] [Related]
10. A Synchrotron Radiation Photoemission Study of SiGe(001)-2×1 Grown on Ge and Si Substrates: The Surface Electronic Structure for Various Ge Concentrations. Cheng YT; Wan HW; Kwo J; Hong M; Pi TW Nanomaterials (Basel); 2022 Apr; 12(8):. PubMed ID: 35458017 [TBL] [Abstract][Full Text] [Related]
11. Band-gap modulation in single-crystalline Si1-xGex nanowires. Yang JE; Jin CB; Kim CJ; Jo MH Nano Lett; 2006 Dec; 6(12):2679-84. PubMed ID: 17163687 [TBL] [Abstract][Full Text] [Related]
12. Mixed-Substituted Single-Source Precursors for Si Köstler B; Jungwirth F; Achenbach L; Sistani M; Bolte M; Lerner HW; Albert P; Wagner M; Barth S Inorg Chem; 2022 Oct; 61(43):17248-17255. PubMed ID: 36260357 [TBL] [Abstract][Full Text] [Related]
13. Si Doping of Vapor-Liquid-Solid GaAs Nanowires: n-Type or p-Type? Hijazi H; Monier G; Gil E; Trassoudaine A; Bougerol C; Leroux C; Castellucci D; Robert-Goumet C; Hoggan PE; André Y; Isik Goktas N; LaPierre RR; Dubrovskii VG Nano Lett; 2019 Jul; 19(7):4498-4504. PubMed ID: 31203632 [TBL] [Abstract][Full Text] [Related]
14. Direct bandgap quantum wells in hexagonal Silicon Germanium. Peeters WHJ; van Lange VT; Belabbes A; van Hemert MC; Jansen MM; Farina R; van Tilburg MAJ; Verheijen MA; Botti S; Bechstedt F; Haverkort JEM; Bakkers EPAM Nat Commun; 2024 Jun; 15(1):5252. PubMed ID: 38898007 [TBL] [Abstract][Full Text] [Related]
15. Realizing High Thermoelectric Performance at Ambient Temperature by Ternary Alloying in Polycrystalline Si Peng Y; Miao L; Gao J; Liu C; Kurosawa M; Nakatsuka O; Zaima S Sci Rep; 2019 Oct; 9(1):14342. PubMed ID: 31586102 [TBL] [Abstract][Full Text] [Related]
16. High Thermoelectric Power Factor Realization in Si-Rich SiGe/Si Superlattices by Super-Controlled Interfaces. Taniguchi T; Ishibe T; Naruse N; Mera Y; Alam MM; Sawano K; Nakamura Y ACS Appl Mater Interfaces; 2020 Jun; 12(22):25428-25434. PubMed ID: 32427454 [TBL] [Abstract][Full Text] [Related]
17. New Strategies for Engineering Tensile Strained Si Layers for Novel n-Type MOSFET. David T; Berbezier I; Aqua JN; Abbarchi M; Ronda A; Pons N; Domart F; Costaganna P; Uren G; Favre L ACS Appl Mater Interfaces; 2021 Jan; 13(1):1807-1817. PubMed ID: 33356130 [TBL] [Abstract][Full Text] [Related]
18. Defect-free single-crystal SiGe: a new material from nanomembrane strain engineering. Paskiewicz DM; Tanto B; Savage DE; Lagally MG ACS Nano; 2011 Jul; 5(7):5814-22. PubMed ID: 21650206 [TBL] [Abstract][Full Text] [Related]