These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
172 related articles for article (PubMed ID: 30892324)
1. Computational understanding of the structural and electronic properties of the GeS-graphene contact. Chen H; Zhao J; Huang J; Liang Y Phys Chem Chem Phys; 2019 Apr; 21(14):7447-7453. PubMed ID: 30892324 [TBL] [Abstract][Full Text] [Related]
2. Tunable Schottky barrier in graphene/graphene-like germanium carbide van der Waals heterostructure. Wang S; Chou JP; Ren C; Tian H; Yu J; Sun C; Xu Y; Sun M Sci Rep; 2019 Mar; 9(1):5208. PubMed ID: 30914666 [TBL] [Abstract][Full Text] [Related]
3. Tuning the Schottky barrier height in graphene/monolayer-GeI de Andrade Deus DP; de Oliveira ISS J Phys Condens Matter; 2020 May; 32(35):. PubMed ID: 32320968 [TBL] [Abstract][Full Text] [Related]
4. Strain and Electric Field Controllable Schottky Barriers and Contact Types in Graphene-MoTe Lan Y; Xia LX; Huang T; Xu W; Huang GF; Hu W; Huang WQ Nanoscale Res Lett; 2020 Sep; 15(1):180. PubMed ID: 32955632 [TBL] [Abstract][Full Text] [Related]
5. Interlayer coupling and electric field tunable electronic properties and Schottky barrier in a graphene/bilayer-GaSe van der Waals heterostructure. Phuc HV; Hieu NN; Hoi BD; Nguyen CV Phys Chem Chem Phys; 2018 Jul; 20(26):17899-17908. PubMed ID: 29926024 [TBL] [Abstract][Full Text] [Related]
6. Lowering the Schottky barrier height of G/WSSe van der Waals heterostructures by changing the interlayer coupling and applying external biaxial strain. Zhang WX; Yin Y; He C Phys Chem Chem Phys; 2020 Nov; 22(45):26231-26240. PubMed ID: 33174552 [TBL] [Abstract][Full Text] [Related]
7. Electronic properties of blue phosphorene/graphene and blue phosphorene/graphene-like gallium nitride heterostructures. Sun M; Chou JP; Yu J; Tang W Phys Chem Chem Phys; 2017 Jul; 19(26):17324-17330. PubMed ID: 28644492 [TBL] [Abstract][Full Text] [Related]
8. Adjusting the electronic properties and contact types of graphene/F-diamane-like C Do TN; Nguyen ST; Nguyen CQ RSC Adv; 2021 Nov; 11(60):37981-37987. PubMed ID: 35498061 [TBL] [Abstract][Full Text] [Related]
9. First-principles calculations of the electronic properties of SiC-based bilayer and trilayer heterostructures. Li S; Sun M; Chou JP; Wei J; Xing H; Hu A Phys Chem Chem Phys; 2018 Oct; 20(38):24726-24734. PubMed ID: 30225488 [TBL] [Abstract][Full Text] [Related]
10. Tunable interlayer coupling and Schottky barrier in graphene and Janus MoSSe heterostructures by applying an external field. Li Y; Wang J; Zhou B; Wang F; Miao Y; Wei J; Zhang B; Zhang K Phys Chem Chem Phys; 2018 Oct; 20(37):24109-24116. PubMed ID: 30204181 [TBL] [Abstract][Full Text] [Related]
11. Tunable electronic properties and Schottky barrier in a graphene/WSe Zhang R; Hao G; Ye X; Gao S; Li H Phys Chem Chem Phys; 2020 Nov; 22(41):23699-23706. PubMed ID: 33057555 [TBL] [Abstract][Full Text] [Related]
12. Schottky barrier modulation of a GaTe/graphene heterostructure by interlayer distance and perpendicular electric field. Li H; Zhou Z; Zhang K; Wang H Nanotechnology; 2019 Oct; 30(40):405207. PubMed ID: 31247615 [TBL] [Abstract][Full Text] [Related]
13. Tailoring the structural and electronic properties of an SnSe Vu TV; Hieu NV; Thao LTP; Hieu NN; Phuc HV; Bui HD; Idrees M; Amin B; Duc LM; Nguyen CV Phys Chem Chem Phys; 2019 Oct; 21(39):22140-22148. PubMed ID: 31573019 [TBL] [Abstract][Full Text] [Related]
14. Structural and electronic properties of a van der Waals heterostructure based on silicene and gallium selenide: effect of strain and electric field. Le PTT; Hieu NN; Bui LM; Phuc HV; Hoi BD; Amin B; Nguyen CV Phys Chem Chem Phys; 2018 Nov; 20(44):27856-27864. PubMed ID: 30398248 [TBL] [Abstract][Full Text] [Related]
15. TiS Liu J; Guo Y; Wang FQ; Wang Q Nanoscale; 2018 Jan; 10(2):807-815. PubMed ID: 29260814 [TBL] [Abstract][Full Text] [Related]
16. Tunable Schottky barrier in InTe/graphene van der Waals heterostructure. Li H; Zhou Z; Wang H Nanotechnology; 2020 Aug; 31(33):335201. PubMed ID: 32348976 [TBL] [Abstract][Full Text] [Related]