These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

163 related articles for article (PubMed ID: 30913763)

  • 21. Nonvolatile ferroelectric field effect transistor based on a vanadium dioxide nanowire with large on- and off-field resistance switching.
    Zhang Y; Xiong W; Chen W; Luo X; Zhang X; Zheng Y
    Phys Chem Chem Phys; 2020 Feb; 22(8):4685-4691. PubMed ID: 32057040
    [TBL] [Abstract][Full Text] [Related]  

  • 22. Constrain Effect of Charge Traps in Organic Field-Effect Transistors with Ferroelectric Polymer as a Dielectric Interfacial Layer.
    Wu Y; Wang Z; Yang L; Qiao Y; Chang D; Yan Y; Wu Z; Hu Z; Zhang J; Lu X; Zhao Y; Liu Y
    ACS Appl Mater Interfaces; 2022 Jan; 14(2):3095-3102. PubMed ID: 34984906
    [TBL] [Abstract][Full Text] [Related]  

  • 23. Ferroelectric transistors with asymmetric double gate for memory window exceeding 12 V and disturb-free read.
    Mulaosmanovic H; Kleimaier D; Dünkel S; Beyer S; Mikolajick T; Slesazeck S
    Nanoscale; 2021 Oct; 13(38):16258-16266. PubMed ID: 34549741
    [TBL] [Abstract][Full Text] [Related]  

  • 24. Memory Window and Endurance Improvement of Hf
    Xiao W; Liu C; Peng Y; Zheng S; Feng Q; Zhang C; Zhang J; Hao Y; Liao M; Zhou Y
    Nanoscale Res Lett; 2019 Jul; 14(1):254. PubMed ID: 31350697
    [TBL] [Abstract][Full Text] [Related]  

  • 25. Power-Delay Area-Efficient Processing-In-Memory Based on Nanocrystalline Hafnia Ferroelectric Field-Effect Transistors.
    Kim G; Ko DH; Kim T; Lee S; Jung M; Lee YK; Lim S; Jo M; Eom T; Shin H; Jeong Y; Jung S; Jeon S
    ACS Appl Mater Interfaces; 2023 Jan; 15(1):1463-1474. PubMed ID: 36576964
    [TBL] [Abstract][Full Text] [Related]  

  • 26. Pure ZrO
    Wang Z; Guan Z; Wang H; Zhou X; Li J; Shen S; Yin Y; Li X
    ACS Appl Mater Interfaces; 2024 May; 16(17):22122-22130. PubMed ID: 38626418
    [TBL] [Abstract][Full Text] [Related]  

  • 27. Area-Scalable 10
    Takahashi M; Sakai S
    Nanomaterials (Basel); 2021 Jan; 11(1):. PubMed ID: 33406688
    [TBL] [Abstract][Full Text] [Related]  

  • 28. Effects of Charge Trapping on Memory Characteristics for HfO
    Wang J; Bi J; Xu Y; Niu G; Liu M; Stempitsky V
    Nanomaterials (Basel); 2023 Feb; 13(4):. PubMed ID: 36839006
    [TBL] [Abstract][Full Text] [Related]  

  • 29. Ultralow-power non-volatile memory cells based on P(VDF-TrFE) ferroelectric-gate CMOS silicon nanowire channel field-effect transistors.
    Van NH; Lee JH; Whang D; Kang DJ
    Nanoscale; 2015 Jul; 7(27):11660-6. PubMed ID: 26098677
    [TBL] [Abstract][Full Text] [Related]  

  • 30. Reliable Nonvolatile Memory Black Phosphorus Ferroelectric Field-Effect Transistors with van der Waals Buffer.
    Yan S; Huang H; Xie Z; Ye G; Li XX; Taniguchi T; Watanabe K; Han Z; Chen X; Wang J; Chen JH
    ACS Appl Mater Interfaces; 2019 Nov; 11(45):42358-42364. PubMed ID: 31633328
    [TBL] [Abstract][Full Text] [Related]  

  • 31. Frequency Mixing with HfO
    Mulaosmanovic H; Dünkel S; Trentzsch M; Beyer S; Breyer ET; Mikolajick T; Slesazeck S
    ACS Appl Mater Interfaces; 2020 Oct; 12(40):44919-44925. PubMed ID: 32940452
    [TBL] [Abstract][Full Text] [Related]  

  • 32. Nonvolatile Ferroelectric Memory Circuit Using Black Phosphorus Nanosheet-Based Field-Effect Transistors with P(VDF-TrFE) Polymer.
    Lee YT; Kwon H; Kim JS; Kim HH; Lee YJ; Lim JA; Song YW; Yi Y; Choi WK; Hwang DK; Im S
    ACS Nano; 2015 Oct; 9(10):10394-401. PubMed ID: 26370537
    [TBL] [Abstract][Full Text] [Related]  

  • 33. Polarization-tunable interfacial properties in monolayer-MoS
    Yuan J; Dai JQ; Liu YZ; Zhao MW
    Phys Chem Chem Phys; 2023 Sep; 25(37):25177-25190. PubMed ID: 37712428
    [TBL] [Abstract][Full Text] [Related]  

  • 34. Improved Retention Performance in Graphene-Ferroelectric Memory Device Through Mitigation of the Surface Roughness of the Ferroelectric Layer.
    Kim WY
    J Nanosci Nanotechnol; 2019 Apr; 19(4):2206-2210. PubMed ID: 30486969
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Laser-induced nondestructive patterning of a thin ferroelectric polymer film with controlled crystals using Ge8Sb2Te11 alloy layer for nonvolatile memory.
    Bae I; Kim RH; Hwang SK; Kang SJ; Park C
    ACS Appl Mater Interfaces; 2014 Sep; 6(17):15171-8. PubMed ID: 25127181
    [TBL] [Abstract][Full Text] [Related]  

  • 36. Inductive crystallization effect of atomic-layer-deposited Hf0.5Zr0.5O2 films for ferroelectric application.
    Zhang X; Chen L; Sun QQ; Wang LH; Zhou P; Lu HL; Wang PF; Ding SJ; Zhang DW
    Nanoscale Res Lett; 2015; 10():25. PubMed ID: 25852322
    [TBL] [Abstract][Full Text] [Related]  

  • 37. Laterally gated ferroelectric field effect transistor (LG-FeFET) using α-In
    Park S; Lee D; Kang J; Choi H; Park JH
    Nat Commun; 2023 Oct; 14(1):6778. PubMed ID: 37880220
    [TBL] [Abstract][Full Text] [Related]  

  • 38. ZrO
    Liu H; Peng Y; Han G; Liu Y; Zhong N; Duan C; Hao Y
    Nanoscale Res Lett; 2020 May; 15(1):120. PubMed ID: 32449145
    [TBL] [Abstract][Full Text] [Related]  

  • 39. Ferroelectric memory based on nanostructures.
    Liu X; Liu Y; Chen W; Li J; Liao L
    Nanoscale Res Lett; 2012 Jun; 7(1):285. PubMed ID: 22655750
    [TBL] [Abstract][Full Text] [Related]  

  • 40. Investigation of Ferroelectric Grain Sizes and Orientations in Pt/Ca
    Zhang W; Takahashi M; Sakai S
    Materials (Basel); 2019 Jan; 12(3):. PubMed ID: 30696011
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 9.