These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

110 related articles for article (PubMed ID: 30917343)

  • 1. Epitaxially grown III-arsenide-antimonide nanowires for optoelectronic applications.
    Ren D; Ahtapodov L; van Helvoort ATJ; Weman H; Fimland BO
    Nanotechnology; 2019 Jul; 30(29):294001. PubMed ID: 30917343
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Recent Progress on the Gold-Free Integration of Ternary III-As Antimonide Nanowires Directly on Silicon.
    Anyebe EA
    Nanomaterials (Basel); 2020 Oct; 10(10):. PubMed ID: 33086569
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Recent advances in III-Sb nanowires: from synthesis to applications.
    Yip S; Shen L; Ho JC
    Nanotechnology; 2019 May; 30(20):202003. PubMed ID: 30625448
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Controlling the morphology and wavelength of self-assembled coaxial GaAs/Ga(As)Sb/GaAs single quantum-well nanowires.
    Kang Y; Lin F; Tang J; Dai Q; Hou X; Meng B; Wang D; Wang L; Wei Z
    Phys Chem Chem Phys; 2023 Jan; 25(2):1248-1256. PubMed ID: 36530045
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Room temperature GaAsSb single nanowire infrared photodetectors.
    Li Z; Yuan X; Fu L; Peng K; Wang F; Fu X; Caroff P; White TP; Hoe Tan H; Jagadish C
    Nanotechnology; 2015 Nov; 26(44):445202. PubMed ID: 26451616
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Recent advances in Sb-based III-V nanowires.
    Gao Z; Sun J; Han M; Yin Y; Gu Y; Yang ZX; Zeng H
    Nanotechnology; 2019 May; 30(21):212002. PubMed ID: 30708362
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Optically efficient InAsSb nanowires for silicon-based mid-wavelength infrared optoelectronics.
    Zhuang QD; Alradhi H; Jin ZM; Chen XR; Shao J; Chen X; Sanchez AM; Cao YC; Liu JY; Yates P; Durose K; Jin CJ
    Nanotechnology; 2017 Mar; 28(10):105710. PubMed ID: 28177930
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Low frequency noise in single GaAsSb nanowires with self-induced compositional gradients.
    Huh J; Kim DC; Munshi AM; Dheeraj DL; Jang D; Kim GT; Fimland BO; Weman H
    Nanotechnology; 2016 Sep; 27(38):385703. PubMed ID: 27528601
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Molecular beam epitaxial growth of GaAsSb/GaAsSbN/GaAlAs core-multishell nanowires for near-infrared applications.
    Deshmukh P; Li J; Nalamati S; Sharma M; Iyer S
    Nanotechnology; 2019 Jul; 30(27):275203. PubMed ID: 30865932
    [TBL] [Abstract][Full Text] [Related]  

  • 10. The role of As species in self-catalyzed growth of GaAs and GaAsSb nanowires.
    Koivusalo E; Hilska J; Galeti HVA; Galvão Gobato Y; Guina M; Hakkarainen T
    Nanotechnology; 2020 Nov; 31(46):465601. PubMed ID: 32750687
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Can antimonide-based nanowires form wurtzite crystal structure?
    Gorji Ghalamestani S; Lehmann S; Dick KA
    Nanoscale; 2016 Feb; 8(5):2778-86. PubMed ID: 26763161
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Faceting, composition and crystal phase evolution in III-V antimonide nanowire heterostructures revealed by combining microscopy techniques.
    Xu T; Dick KA; Plissard S; Nguyen TH; Makoudi Y; Berthe M; Nys JP; Wallart X; Grandidier B; Caroff P
    Nanotechnology; 2012 Mar; 23(9):095702. PubMed ID: 22322440
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Ultra-fast photodetectors based on high-mobility indium gallium antimonide nanowires.
    Li D; Lan C; Manikandan A; Yip S; Zhou Z; Liang X; Shu L; Chueh YL; Han N; Ho JC
    Nat Commun; 2019 Apr; 10(1):1664. PubMed ID: 30971702
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Heterostructure axial GaAsSb ensemble near-infrared p-i-n based axial configured nanowire photodetectors.
    Devkota S; Kuchoor H; Dawkins K; Pokharel R; Parakh M; Li J; Iyer S
    Nanotechnology; 2023 Apr; 34(26):. PubMed ID: 36893449
    [TBL] [Abstract][Full Text] [Related]  

  • 15. New Insights into the Origins of Sb-Induced Effects on Self-Catalyzed GaAsSb Nanowire Arrays.
    Ren D; Dheeraj DL; Jin C; Nilsen JS; Huh J; Reinertsen JF; Munshi AM; Gustafsson A; van Helvoort AT; Weman H; Fimland BO
    Nano Lett; 2016 Feb; 16(2):1201-9. PubMed ID: 26726825
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Recent progress on infrared photodetectors based on InAs and InAsSb nanowires.
    Xu T; Wang H; Chen X; Luo M; Zhang L; Wang Y; Chen F; Shan C; Yu C
    Nanotechnology; 2020 May; 31(29):294004. PubMed ID: 32235081
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Controlling the morphology, composition and crystal structure in gold-seeded GaAs(1-x)Sb(x) nanowires.
    Yuan X; Caroff P; Wong-Leung J; Tan HH; Jagadish C
    Nanoscale; 2015 Mar; 7(11):4995-5003. PubMed ID: 25692266
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Revealing charge carrier dynamics and transport in Te-doped GaAsSb and GaAsSbN nanowires by correlating ultrafast terahertz spectroscopy and optoelectronic characterization.
    Yuan L; Pokharel R; Devkota S; Kuchoor H; Dawkins K; Lee MC; Huang Y; Yarotski D; Iyer S; Prasankumar RP
    Nanotechnology; 2022 Jul; 33(42):. PubMed ID: 35772308
    [TBL] [Abstract][Full Text] [Related]  

  • 19. InAs-Nanowire-Based Broadband Ultrafast Optical Switch.
    Liu J; Khayrudinov V; Yang H; Sun Y; Matveev B; Remennyi M; Yang K; Haggren T; Lipsanen H; Wang F; Zhang B; He J
    J Phys Chem Lett; 2019 Aug; 10(15):4429-4436. PubMed ID: 31317748
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Straight Indium Antimonide Nanowires with Twinning Superlattices via a Solution Route.
    Qian Y; Yang Q
    Nano Lett; 2017 Dec; 17(12):7183-7190. PubMed ID: 29115841
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 6.