275 related articles for article (PubMed ID: 30932266)
1. High-Performance Solution-Processed Organo-Metal Halide Perovskite Unipolar Resistive Memory Devices in a Cross-Bar Array Structure.
Kang K; Ahn H; Song Y; Lee W; Kim J; Kim Y; Yoo D; Lee T
Adv Mater; 2019 May; 31(21):e1804841. PubMed ID: 30932266
[TBL] [Abstract][Full Text] [Related]
2. A Strategy to Design High-Density Nanoscale Devices utilizing Vapor Deposition of Metal Halide Perovskite Materials.
Hwang B; Lee JS
Adv Mater; 2017 Aug; 29(29):. PubMed ID: 28558134
[TBL] [Abstract][Full Text] [Related]
3. MAPbBr
Kim H; Kim JS; Choi J; Kim YH; Suh JM; Choi MJ; Shim YS; Kim SY; Lee TW; Jang HW
ACS Appl Mater Interfaces; 2024 Jan; 16(2):2457-2466. PubMed ID: 38166386
[TBL] [Abstract][Full Text] [Related]
4. Improved Performance of CH
Xia F; Xu Y; Li B; Hui W; Zhang S; Zhu L; Xia Y; Chen Y; Huang W
ACS Appl Mater Interfaces; 2020 Apr; 12(13):15439-15445. PubMed ID: 32148014
[TBL] [Abstract][Full Text] [Related]
5. All-Inorganic Bismuth Halide Perovskite-Like Materials A
Cuhadar C; Kim SG; Yang JM; Seo JY; Lee D; Park NG
ACS Appl Mater Interfaces; 2018 Sep; 10(35):29741-29749. PubMed ID: 29968458
[TBL] [Abstract][Full Text] [Related]
6. Solution-processed inorganic δ-phase CsPbI
Ge J; Ma Z; Chen W; Cao X; Yan J; Fang H; Qin J; Liu Z; Pan S
Nanoscale; 2020 Jul; 12(25):13558-13566. PubMed ID: 32555883
[TBL] [Abstract][Full Text] [Related]
7. Single Crystal Halide Perovskite Film for Nonlinear Resistive Memory with Ultrahigh Switching Ratio.
Li L; Chen Y; Cai C; Ma P; Ji H; Zou G
Small; 2022 Jan; 18(3):e2103881. PubMed ID: 34816558
[TBL] [Abstract][Full Text] [Related]
8. Tailored 2D/3D Halide Perovskite Heterointerface for Substantially Enhanced Endurance in Conducting Bridge Resistive Switching Memory.
Lee S; Kim H; Kim DH; Kim WB; Lee JM; Choi J; Shin H; Han GS; Jang HW; Jung HS
ACS Appl Mater Interfaces; 2020 Apr; 12(14):17039-17045. PubMed ID: 32174107
[TBL] [Abstract][Full Text] [Related]
9. Flexible All-Inorganic Perovskite CsPbBr
Liu D; Lin Q; Zang Z; Wang M; Wangyang P; Tang X; Zhou M; Hu W
ACS Appl Mater Interfaces; 2017 Feb; 9(7):6171-6176. PubMed ID: 28112895
[TBL] [Abstract][Full Text] [Related]
10. Enhanced Endurance Organolead Halide Perovskite Resistive Switching Memories Operable under an Extremely Low Bending Radius.
Choi J; Le QV; Hong K; Moon CW; Han JS; Kwon KC; Cha PR; Kwon Y; Kim SY; Jang HW
ACS Appl Mater Interfaces; 2017 Sep; 9(36):30764-30771. PubMed ID: 28825292
[TBL] [Abstract][Full Text] [Related]
11. Air-Stable Lead-Free Perovskite Thin Film Based on CsBi
Xiong Z; Hu W; She Y; Lin Q; Hu L; Tang X; Sun K
ACS Appl Mater Interfaces; 2019 Aug; 11(33):30037-30044. PubMed ID: 31342747
[TBL] [Abstract][Full Text] [Related]
12. Extremely Low Program Current Memory Based on Self-Assembled All-Inorganic Perovskite Single Crystals.
Liu J; Jin J; Yang Z; Cai J; Yue J; Impundu J; Liu H; Wei H; Peng Z; Li YJ; Sun L
ACS Appl Mater Interfaces; 2020 Jul; 12(28):31776-31782. PubMed ID: 32567297
[TBL] [Abstract][Full Text] [Related]
13. Halide Perovskites for Resistive Switching Memory.
Kang K; Hu W; Tang X
J Phys Chem Lett; 2021 Dec; 12(48):11673-11682. PubMed ID: 34842437
[TBL] [Abstract][Full Text] [Related]
14. Impact of Hydroiodic Acid on Resistive Switching Performance of Lead-Free Cs
Zeng F; Tan Y; Hu W; Tang X; Luo Z; Huang Q; Guo Y; Zhang X; Yin H; Feng J; Zhao X; Yang B
J Phys Chem Lett; 2021 Feb; 12(7):1973-1978. PubMed ID: 33594881
[TBL] [Abstract][Full Text] [Related]
15. Resistive Switching Property of Organic-Inorganic Tri-Cation Lead Iodide Perovskite Memory Device.
Hsiao YW; Wang SY; Huang CL; Leu CC; Shih CF
Nanomaterials (Basel); 2020 Jun; 10(6):. PubMed ID: 32545543
[No Abstract] [Full Text] [Related]
16. Oxide Passivation of Halide Perovskite Resistive Memory Device: A Strategy for Overcoming Endurance Problem.
Lee S; Kim WB; Lee JM; Kim HJ; Choi JH; Jung HS
ACS Appl Mater Interfaces; 2021 Sep; 13(37):44577-44584. PubMed ID: 34495629
[TBL] [Abstract][Full Text] [Related]
17. Enhanced resistive switching performance in yttrium-doped CH
Luo F; Ruan L; Tong J; Wu Y; Sun C; Qin G; Tian F; Zhang X
Phys Chem Chem Phys; 2021 Oct; 23(38):21757-21768. PubMed ID: 34550133
[TBL] [Abstract][Full Text] [Related]
18. Lead-Free All-Inorganic Cesium Tin Iodide Perovskite for Filamentary and Interface-Type Resistive Switching toward Environment-Friendly and Temperature-Tolerant Nonvolatile Memories.
Han JS; Le QV; Choi J; Kim H; Kim SG; Hong K; Moon CW; Kim TL; Kim SY; Jang HW
ACS Appl Mater Interfaces; 2019 Feb; 11(8):8155-8163. PubMed ID: 30698005
[TBL] [Abstract][Full Text] [Related]
19. Induced Vacancy-Assisted Filamentary Resistive Switching Device Based on RbPbI
Das U; Das D; Paul B; Rabha T; Pattanayak S; Kanjilal A; Bhattacharjee S; Sarkar P; Roy A
ACS Appl Mater Interfaces; 2020 Sep; 12(37):41718-41727. PubMed ID: 32830960
[TBL] [Abstract][Full Text] [Related]
20. Pseudohalide-Induced 2D (CH
Cheng XF; Hou X; Zhou J; Gao BJ; He JH; Li H; Xu QF; Li NJ; Chen DY; Lu JM
Small; 2018 Mar; 14(12):e1703667. PubMed ID: 29457377
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]