These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
137 related articles for article (PubMed ID: 30937641)
1. Nanocrystal-Embedded-Insulator (NEI) Ferroelectric FETs for Negative Capacitance Device and Non-Volatile Memory Applications. Peng Y; Han G; Xiao W; Wu J; Liu Y; Zhang J; Hao Y Nanoscale Res Lett; 2019 Apr; 14(1):115. PubMed ID: 30937641 [TBL] [Abstract][Full Text] [Related]
2. Two-Dimensional CIPS-InSe van der Waal Heterostructure Ferroelectric Field Effect Transistor for Nonvolatile Memory Applications. Singh P; Baek S; Yoo HH; Niu J; Park JH; Lee S ACS Nano; 2022 Apr; 16(4):5418-5426. PubMed ID: 35234041 [TBL] [Abstract][Full Text] [Related]
3. Memory Window and Endurance Improvement of Hf Xiao W; Liu C; Peng Y; Zheng S; Feng Q; Zhang C; Zhang J; Hao Y; Liao M; Zhou Y Nanoscale Res Lett; 2019 Jul; 14(1):254. PubMed ID: 31350697 [TBL] [Abstract][Full Text] [Related]
4. ZrO Liu H; Peng Y; Han G; Liu Y; Zhong N; Duan C; Hao Y Nanoscale Res Lett; 2020 May; 15(1):120. PubMed ID: 32449145 [TBL] [Abstract][Full Text] [Related]
5. Low Voltage Operating 2D MoS Zhang S; Liu Y; Zhou J; Ma M; Gao A; Zheng B; Li L; Su X; Han G; Zhang J; Shi Y; Wang X; Hao Y Nanoscale Res Lett; 2020 Aug; 15(1):157. PubMed ID: 32743764 [TBL] [Abstract][Full Text] [Related]
6. Ferroelectric-like Behavior Originating from Oxygen Vacancy Dipoles in Amorphous Film for Non-volatile Memory. Peng Y; Han G; Liu F; Xiao W; Liu Y; Zhong N; Duan C; Feng Z; Dong H; Hao Y Nanoscale Res Lett; 2020 Jun; 15(1):134. PubMed ID: 32572644 [TBL] [Abstract][Full Text] [Related]
7. High-Performance C Li C; Li L; Zhang F; Li Z; Zhu W; Dong L; Zhao J ACS Appl Mater Interfaces; 2023 Apr; 15(13):16910-16917. PubMed ID: 36967661 [TBL] [Abstract][Full Text] [Related]
8. Solution-processable low-voltage carbon nanotube field-effect transistors with high- Yang D; Moon Y; Han N; Lee M; Beak J; Lee SH; Kim DY Nanotechnology; 2024 May; 35(29):. PubMed ID: 38608317 [TBL] [Abstract][Full Text] [Related]
10. Ferroelectric field-effect transistors based on HfO Mulaosmanovic H; Breyer ET; Dünkel S; Beyer S; Mikolajick T; Slesazeck S Nanotechnology; 2021 Sep; 32(50):. PubMed ID: 34320479 [TBL] [Abstract][Full Text] [Related]
11. Ferroelectric-Dielectric Mixed Buffer Layer for Enhanced Electrical Performance of Organic Ferroelectric Memory Transistors. Kim JR; Boampong AA; Choi Y; Kim MH J Nanosci Nanotechnol; 2019 Aug; 19(8):4651-4656. PubMed ID: 30913763 [TBL] [Abstract][Full Text] [Related]
12. ZrO Zhang S; Liu H; Zhou J; Liu Y; Han G; Hao Y Nanoscale Res Lett; 2021 Feb; 16(1):21. PubMed ID: 33532927 [TBL] [Abstract][Full Text] [Related]
13. Accumulative Polarization Reversal in Nanoscale Ferroelectric Transistors. Mulaosmanovic H; Mikolajick T; Slesazeck S ACS Appl Mater Interfaces; 2018 Jul; 10(28):23997-24002. PubMed ID: 29947210 [TBL] [Abstract][Full Text] [Related]
14. A FeFET with a novel MFMFIS gate stack: towards energy-efficient and ultrafast NVMs for neuromorphic computing. Ali T; Mertens K; Kühnel K; Rudolph M; Oehler S; Lehninger D; Müller F; Revello R; Hoffmann R; Zimmermann K; Kämpfe T; Czernohorsky M; Seidel K; Van Houdt J; Eng LM Nanotechnology; 2021 Jul; 32(42):. PubMed ID: 34261048 [TBL] [Abstract][Full Text] [Related]
15. Hf Jeong J; Park H; Kim J; Moon H; Choi H; Kim E; Jeon S; Kim Y; Woo J J Phys Chem Lett; 2024 Oct; 15(40):10258-10264. PubMed ID: 39360934 [TBL] [Abstract][Full Text] [Related]
16. Impact of Ferroelectric Capacitor's Electrode Area on the Performance of Negative Capacitance Field Effect Transistor. Cho H; Shin J; Shin C J Nanosci Nanotechnol; 2019 Oct; 19(10):6087-6090. PubMed ID: 31026913 [TBL] [Abstract][Full Text] [Related]
17. Ferroelectric Field-Effect-Transistor Integrated with Ferroelectrics Heterostructure. Baek S; Yoo HH; Ju JH; Sriboriboon P; Singh P; Niu J; Park JH; Shin C; Kim Y; Lee S Adv Sci (Weinh); 2022 Jul; 9(21):e2200566. PubMed ID: 35570404 [TBL] [Abstract][Full Text] [Related]
18. Reconfigurable Quasi-Nonvolatile Memory/Subthermionic FET Functions in Ferroelectric-2D Semiconductor vdW Architectures. Wang Z; Liu X; Zhou X; Yuan Y; Zhou K; Zhang D; Luo H; Sun J Adv Mater; 2022 Apr; 34(15):e2200032. PubMed ID: 35194847 [TBL] [Abstract][Full Text] [Related]
19. Power-Delay Area-Efficient Processing-In-Memory Based on Nanocrystalline Hafnia Ferroelectric Field-Effect Transistors. Kim G; Ko DH; Kim T; Lee S; Jung M; Lee YK; Lim S; Jo M; Eom T; Shin H; Jeong Y; Jung S; Jeon S ACS Appl Mater Interfaces; 2023 Jan; 15(1):1463-1474. PubMed ID: 36576964 [TBL] [Abstract][Full Text] [Related]
20. A three-terminal non-volatile ferroelectric switch with an insulator-metal transition channel. Vaidya J; Kanthi RSS; Alam S; Amin N; Aziz A; Shukla N Sci Rep; 2022 Feb; 12(1):2199. PubMed ID: 35140259 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]