165 related articles for article (PubMed ID: 30941527)
1. High-Performance a-InGaZnO Thin-Film Transistors with Extremely Low Thermal Budget by Using a Hydrogen-Rich Al
Shao Y; Wu X; Zhang MN; Liu WJ; Ding SJ
Nanoscale Res Lett; 2019 Apr; 14(1):122. PubMed ID: 30941527
[TBL] [Abstract][Full Text] [Related]
2. Light response behaviors of amorphous In-Ga-Zn-O thin-film transistors
Wang XL; Shao Y; Wu X; Zhang MN; Li L; Liu WJ; Zhang DW; Ding SJ
RSC Adv; 2020 Jan; 10(6):3572-3578. PubMed ID: 35497714
[TBL] [Abstract][Full Text] [Related]
3. Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor.
Xiao X; Zhang L; Shao Y; Zhou X; He H; Zhang S
ACS Appl Mater Interfaces; 2018 Aug; 10(31):25850-25857. PubMed ID: 29235839
[TBL] [Abstract][Full Text] [Related]
4. Effects of Deposition Temperature on the Device Characteristics of Oxide Thin-Film Transistors Using In-Ga-Zn-O Active Channels Prepared by Atomic-Layer Deposition.
Yoon SM; Seong NJ; Choi K; Seo GH; Shin WC
ACS Appl Mater Interfaces; 2017 Jul; 9(27):22676-22684. PubMed ID: 28653825
[TBL] [Abstract][Full Text] [Related]
5. Achieving a Low-Voltage, High-Mobility IGZO Transistor through an ALD-Derived Bilayer Channel and a Hafnia-Based Gate Dielectric Stack.
Cho MH; Choi CH; Seul HJ; Cho HC; Jeong JK
ACS Appl Mater Interfaces; 2021 Apr; 13(14):16628-16640. PubMed ID: 33793185
[TBL] [Abstract][Full Text] [Related]
6. Organic/Inorganic Hybrid Buffer in InGaZnO Transistors under Repetitive Bending Stress for High Electrical and Mechanical Stability.
Han KL; Han JH; Kim BS; Jeong HJ; Choi JM; Hwang JE; Oh S; Park JS
ACS Appl Mater Interfaces; 2020 Jan; 12(3):3784-3791. PubMed ID: 31878779
[TBL] [Abstract][Full Text] [Related]
7. Room-Temperature Fabrication of High-Performance Amorphous In-Ga-Zn-O/Al
Ning H; Zeng Y; Kuang Y; Zheng Z; Zhou P; Yao R; Zhang H; Bao W; Chen G; Fang Z; Peng J
ACS Appl Mater Interfaces; 2017 Aug; 9(33):27792-27800. PubMed ID: 28767216
[TBL] [Abstract][Full Text] [Related]
8. Enhanced Light Stability of InGaZnO Thin-Film Transistors by Atomic-Layer-Deposited Y
Jung H; Kim WH; Park BE; Woo WJ; Oh IK; Lee SJ; Kim YC; Myoung JM; Gatineau S; Dussarrat C; Kim H
ACS Appl Mater Interfaces; 2018 Jan; 10(2):2143-2150. PubMed ID: 29277990
[TBL] [Abstract][Full Text] [Related]
9. High-Performance Indium Gallium Tin Oxide Transistors with an Al
Choi CH; Kim T; Ueda S; Shiah YS; Hosono H; Kim J; Jeong JK
ACS Appl Mater Interfaces; 2021 Jun; 13(24):28451-28461. PubMed ID: 34111928
[TBL] [Abstract][Full Text] [Related]
10. Near-Ideal Top-Gate Controllability of InGaZnO Thin-Film Transistors by Suppressing Interface Defects with an Ultrathin Atomic Layer Deposited Gate Insulator.
Li J; Zhang Y; Wang J; Yang H; Zhou X; Chan M; Wang X; Lu L; Zhang S
ACS Appl Mater Interfaces; 2023 Feb; 15(6):8666-8675. PubMed ID: 36709447
[TBL] [Abstract][Full Text] [Related]
11. High-mobility and low subthreshold swing amorphous InGaZnO thin-film transistors by
Wu CH; Mohanty SK; Huang BW; Chang KM; Wang SJ; Ma KJ
Nanotechnology; 2023 Feb; 34(17):. PubMed ID: 36696686
[TBL] [Abstract][Full Text] [Related]
12. Performance Enhancement of Channel-Engineered Al-Zn-Sn-O Thin-Film Transistors with Highly Conductive In-Ga-Zn-O Buried Layer via Vacuum Rapid Thermal Annealing.
Kim SH; Cho WJ
J Nanosci Nanotechnol; 2020 Aug; 20(8):4671-4677. PubMed ID: 32126639
[TBL] [Abstract][Full Text] [Related]
13. Electrical Performance and Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors with Buried-Channel Layers.
Zhang Y; Xie H; Dong C
Micromachines (Basel); 2019 Nov; 10(11):. PubMed ID: 31739504
[TBL] [Abstract][Full Text] [Related]
14. Vertically Graded Oxygen Deficiency for Improving Electrical Characteristics and Stability of Indium Gallium Zinc Oxide Thin-Film Transistors.
Yoon CS; Kim HT; Kim MS; Yoo H; Park JW; Choi DH; Kim D; Kim HJ
ACS Appl Mater Interfaces; 2021 Jan; 13(3):4110-4116. PubMed ID: 33448781
[TBL] [Abstract][Full Text] [Related]
15. Ultraviolet-Assisted Low-Thermal-Budget-Driven α-InGaZnO Thin Films for High-Performance Transistors and Logic Circuits.
Zhang Y; He G; Wang L; Wang W; Xu X; Liu W
ACS Nano; 2022 Mar; 16(3):4961-4971. PubMed ID: 35274929
[TBL] [Abstract][Full Text] [Related]
16. Effect of oxygen partial pressure on the performance of homojunction amorphous In-Ga-Zn-O thin-film transistors.
Li ZY; Song SM; Wang WX; Gong JH; Tong Y; Dai MJ; Lin SS; Yang TL; Sun H
Nanotechnology; 2022 Oct; 34(2):. PubMed ID: 36219884
[TBL] [Abstract][Full Text] [Related]
17. Effect of hydrogen diffusion in an In-Ga-Zn-O thin film transistor with an aluminum oxide gate insulator on its electrical properties.
Nam Y; Kim HO; Cho SH; Ko Park SH
RSC Adv; 2018 Jan; 8(10):5622-5628. PubMed ID: 35542402
[TBL] [Abstract][Full Text] [Related]
18. Amorphous IGZO TFT with High Mobility of ∼70 cm
Sheng J; Hong T; Lee HM; Kim K; Sasase M; Kim J; Hosono H; Park JS
ACS Appl Mater Interfaces; 2019 Oct; 11(43):40300-40309. PubMed ID: 31584254
[TBL] [Abstract][Full Text] [Related]
19. Doping Nitrogen in InGaZnO Thin Film Transistor with Double Layer Channel Structure.
Chang SP; Shan D
J Nanosci Nanotechnol; 2018 Apr; 18(4):2493-2497. PubMed ID: 29442918
[TBL] [Abstract][Full Text] [Related]
20. Quantum Confinement Effect in Amorphous In-Ga-Zn-O Heterojunction Channels for Thin-Film Transistors.
Koretomo D; Hamada S; Magari Y; Furuta M
Materials (Basel); 2020 Apr; 13(8):. PubMed ID: 32325945
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
