These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

83 related articles for article (PubMed ID: 30995632)

  • 1. Importance of point defect reactions for the atomic-scale roughness of III-V nanowire sidewalls.
    Díaz Álvarez A; Peric N; Franchina Vergel NA; Nys JP; Berthe M; Patriarche G; Harmand JC; Caroff P; Plissard S; Ebert P; Xu T; Grandidier B
    Nanotechnology; 2019 Aug; 30(32):324002. PubMed ID: 30995632
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Reconsideration of Nanowire Growth Theory at Low Temperatures.
    Dubrovskii VG
    Nanomaterials (Basel); 2021 Sep; 11(9):. PubMed ID: 34578691
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Two-step fabrication of self-catalyzed Ga-based semiconductor nanowires on Si by molecular-beam epitaxy.
    Yu X; Li L; Wang H; Xiao J; Shen C; Pan D; Zhao J
    Nanoscale; 2016 May; 8(20):10615-21. PubMed ID: 27194599
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Surface morphology of Au-free grown nanowires after native oxide removal.
    Hjort M; Knutsson JV; Mandl B; Deppert K; Lundgren E; Timm R; Mikkelsen A
    Nanoscale; 2015 Jun; 7(22):9998-10004. PubMed ID: 25981415
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Synthesis of long group IV semiconductor nanowires by molecular beam epitaxy.
    Xu T; Sulerzycki J; Nys JP; Patriarche G; Grandidier B; Stiévenard D
    Nanoscale Res Lett; 2011 Feb; 6(1):113. PubMed ID: 21711645
    [TBL] [Abstract][Full Text] [Related]  

  • 6. III-V nanowires on black silicon and low-temperature growth of self-catalyzed rectangular InAs NWs.
    Haggren T; Khayrudinov V; Dhaka V; Jiang H; Shah A; Kim M; Lipsanen H
    Sci Rep; 2018 Apr; 8(1):6410. PubMed ID: 29686418
    [TBL] [Abstract][Full Text] [Related]  

  • 7. III-V semiconductor nanowire growth: does arsenic diffuse through the metal nanoparticle catalyst?
    Tizei LH; Chiaramonte T; Ugarte D; Cotta MA
    Nanotechnology; 2009 Jul; 20(27):275604. PubMed ID: 19531855
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Self-selective formation of ordered 1D and 2D GaBi structures on wurtzite GaAs nanowire surfaces.
    Liu Y; Knutsson JV; Wilson N; Young E; Lehmann S; Dick KA; Palmstrøm CJ; Mikkelsen A; Timm R
    Nat Commun; 2021 Oct; 12(1):5990. PubMed ID: 34645829
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Nonstoichiometric Low-Temperature Grown GaAs Nanowires.
    Díaz Álvarez A; Xu T; Tütüncüoglu G; Demonchaux T; Nys JP; Berthe M; Matteini F; Potts HA; Troadec D; Patriarche G; Lampin JF; Coinon C; Fontcuberta i Morral A; Dunin-Borkowski RE; Ebert P; Grandidier B
    Nano Lett; 2015 Oct; 15(10):6440-5. PubMed ID: 26339987
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Modeling Catalyst-Free Growth of III-V Nanowires: Empirical and Rigorous Approaches.
    Dubrovskii VG
    Nanomaterials (Basel); 2023 Apr; 13(7):. PubMed ID: 37049346
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Self-Assembly of InAs Nanostructures on the Sidewalls of GaAs Nanowires Directed by a Bi Surfactant.
    Lewis RB; Corfdir P; Herranz J; Küpers H; Jahn U; Brandt O; Geelhaar L
    Nano Lett; 2017 Jul; 17(7):4255-4260. PubMed ID: 28654278
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Catalyst Composition Tuning: The Key for the Growth of Straight Axial Nanowire Heterostructures with Group III Interchange.
    Zannier V; Ercolani D; Gomes UP; David J; Gemmi M; Dubrovskii VG; Sorba L
    Nano Lett; 2016 Nov; 16(11):7183-7190. PubMed ID: 27760298
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Role of Vacancy Condensation in the Formation of Voids in Rutile TiO
    Folger A; Ebbinghaus P; Erbe A; Scheu C
    ACS Appl Mater Interfaces; 2017 Apr; 9(15):13471-13479. PubMed ID: 28355873
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Carrier Recombination in the Base, Interior, and Surface of InAs/InAlAs Core-Shell Nanowires Grown on Silicon.
    Zhang K; Li X; Dai W; Toor F; Prineas JP
    Nano Lett; 2019 Jul; 19(7):4272-4278. PubMed ID: 31244233
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Faceting, composition and crystal phase evolution in III-V antimonide nanowire heterostructures revealed by combining microscopy techniques.
    Xu T; Dick KA; Plissard S; Nguyen TH; Makoudi Y; Berthe M; Nys JP; Wallart X; Grandidier B; Caroff P
    Nanotechnology; 2012 Mar; 23(9):095702. PubMed ID: 22322440
    [TBL] [Abstract][Full Text] [Related]  

  • 16. A systematic study on the growth of gaas nanowires by metal-organic chemical vapor deposition.
    Soci C; Bao XY; Aplin DP; Wang D
    Nano Lett; 2008 Dec; 8(12):4275-82. PubMed ID: 19367965
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Atomically smooth p-doped silicon nanowires catalyzed by aluminum at low temperature.
    Moutanabbir O; Senz S; Scholz R; Alexe M; Kim Y; Pippel E; Wang Y; Wiethoff C; Nabbefeld T; Meyer zu Heringdorf F; Horn-von Hoegen M
    ACS Nano; 2011 Feb; 5(2):1313-20. PubMed ID: 21210666
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Defect Dynamics in Self-Catalyzed III-V Semiconductor Nanowires.
    Gott JA; Beanland R; Fonseka HA; Peters JJP; Zhang Y; Liu H; Sanchez AM
    Nano Lett; 2019 Jul; 19(7):4574-4580. PubMed ID: 31189065
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Suppression of axial growth by boron incorporation in GaAs nanowires grown by self-catalyzed molecular beam epitaxy.
    Lancaster S; Groiss H; Zederbauer T; Andrews AM; MacFarland D; Schrenk W; Strasser G; Detz H
    Nanotechnology; 2019 Feb; 30(6):065602. PubMed ID: 30523852
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Effect of V/III ratio on the structural and optical properties of self-catalysed GaAs nanowires.
    Ahtapodov L; Munshi AM; Nilsen JS; Reinertsen JF; Dheeraj DL; Fimland BO; van Helvoort AT; Weman H
    Nanotechnology; 2016 Nov; 27(44):445711. PubMed ID: 27688265
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 5.