642 related articles for article (PubMed ID: 31003535)
1. Resistive Switching Characteristics of Li-Doped ZnO Thin Films Based on Magnetron Sputtering.
Zhao X; Li Y; Ai C; Wen D
Materials (Basel); 2019 Apr; 12(8):. PubMed ID: 31003535
[TBL] [Abstract][Full Text] [Related]
2. Li-Doping Effect on Characteristics of ZnO Thin Films Resistive Random Access Memory.
Zhao X; Song P; Gai H; Li Y; Ai C; Wen D
Micromachines (Basel); 2020 Sep; 11(10):. PubMed ID: 32987957
[TBL] [Abstract][Full Text] [Related]
3. Rectifying switching characteristics of Pt/ZnO/Pt structure based resistive memory.
Wang J; Song Z; Xu K; Liu M
J Nanosci Nanotechnol; 2010 Nov; 10(11):7088-91. PubMed ID: 21137871
[TBL] [Abstract][Full Text] [Related]
4. Influence of Incorporated Pt-Fe2O3 Core-Shell Nanoparticles on the Resistive Switching Characteristics of ZnO Thin Film.
Yoo EJ; Kang SY; Shim EL; Yoon TS; Kang CJ; Choi YJ
J Nanosci Nanotechnol; 2015 Nov; 15(11):8622-6. PubMed ID: 26726563
[TBL] [Abstract][Full Text] [Related]
5. Resistive switching characteristics of the Cr/ZnO/Cr structure.
Yoo EJ; Kim JH; Song JH; Yoon TS; Choi YJ; Kang CJ
J Nanosci Nanotechnol; 2013 Sep; 13(9):6395-9. PubMed ID: 24205668
[TBL] [Abstract][Full Text] [Related]
6. Fabrication Technology and Characteristics Research of the Acceleration Sensor Based on Li-Doped ZnO Piezoelectric Thin Films.
Li S; Zhao X; Bai Y; Li Y; Ai C; Wen D
Micromachines (Basel); 2018 Apr; 9(4):. PubMed ID: 30424111
[TBL] [Abstract][Full Text] [Related]
7. Effect of oxidizable electrode material on resistive switching characteristics of ZnO(x)S(1-x) films.
Cho K; Park S; Chung I; Kim S
J Nanosci Nanotechnol; 2014 Nov; 14(11):8187-90. PubMed ID: 25958497
[TBL] [Abstract][Full Text] [Related]
8. Stability scheme of ZnO-thin film resistive switching memory: influence of defects by controllable oxygen pressure ratio.
Huang HW; Kang CF; Lai FI; He JH; Lin SJ; Chueh YL
Nanoscale Res Lett; 2013 Nov; 8(1):483. PubMed ID: 24237683
[TBL] [Abstract][Full Text] [Related]
9. Fabrication and resistive switching characteristics of high compact Ga-doped ZnO nanorod thin film devices.
Yao IC; Lee DY; Tseng TY; Lin P
Nanotechnology; 2012 Apr; 23(14):145201. PubMed ID: 22433578
[TBL] [Abstract][Full Text] [Related]
10. Activation Energy and Bipolar Switching Properties for the Co-Sputtering of ITO
Chen KH; Cheng CM; Wang NF; Kao MC
Nanomaterials (Basel); 2023 Jul; 13(15):. PubMed ID: 37570498
[TBL] [Abstract][Full Text] [Related]
11. Permanent Data Storage in ZnO Thin Films by Filamentary Resistive Switching.
Melo AH; Macêdo MA
PLoS One; 2016; 11(12):e0168515. PubMed ID: 27992513
[TBL] [Abstract][Full Text] [Related]
12. Resistive switching characteristics of ZnO nanowires.
Yoo EJ; Shin IK; Yoon TS; Choi YJ; Kang CJ
J Nanosci Nanotechnol; 2014 Dec; 14(12):9459-64. PubMed ID: 25971083
[TBL] [Abstract][Full Text] [Related]
13. Improvement in Resistance Switching of SiC-Based Nonvolatile Memory by Solution-Deposited HfO
Kim TW; Cho WJ
J Nanosci Nanotechnol; 2019 Mar; 19(3):1248-1253. PubMed ID: 30469171
[TBL] [Abstract][Full Text] [Related]
14. Bi-stable resistive switching characteristics in Ti-doped ZnO thin films.
Younis A; Chu D; Li S
Nanoscale Res Lett; 2013 Apr; 8(1):154. PubMed ID: 23557254
[TBL] [Abstract][Full Text] [Related]
15. Switching-behavior improvement in HfO
Zhang W; Lei J; Dai Y; Zhang X; Kang L; Peng B; Hu F
Nanotechnology; 2022 Apr; 33(25):. PubMed ID: 35294938
[TBL] [Abstract][Full Text] [Related]
16. Fabrication and Characterization of the Li-Doped ZnO Thin Films Piezoelectric Energy Harvester with Multi-Resonant Frequencies.
Zhao X; Li S; Ai C; Liu H; Wen D
Micromachines (Basel); 2019 Mar; 10(3):. PubMed ID: 30917569
[TBL] [Abstract][Full Text] [Related]
17. Structural phase transition and resistive switching properties of Cu
Seo J; Kim T; Kim Y; Jeong MS; Kim EK
Nanotechnology; 2024 Feb; 35(18):. PubMed ID: 38271739
[TBL] [Abstract][Full Text] [Related]
18. Resistive switching behavior in Lu2O3 thin film for advanced flexible memory applications.
Mondal S; Her JL; Koyama K; Pan TM
Nanoscale Res Lett; 2014 Jan; 9(1):3. PubMed ID: 24387704
[TBL] [Abstract][Full Text] [Related]
19. Effects of a Nb nanopin electrode on the resistive random-access memory switching characteristics of NiO thin films.
Ahn Y; Shin HW; Lee TH; Kim WH; Son JY
Nanoscale; 2018 Jul; 10(28):13443-13448. PubMed ID: 29972166
[TBL] [Abstract][Full Text] [Related]
20. A flexible nonvolatile resistive switching memory device based on ZnO film fabricated on a foldable PET substrate.
Sun B; Zhang X; Zhou G; Yu T; Mao S; Zhu S; Zhao Y; Xia Y
J Colloid Interface Sci; 2018 Jun; 520():19-24. PubMed ID: 29525500
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
