These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

182 related articles for article (PubMed ID: 31027029)

  • 21. A mixed solution-processed gate dielectric for zinc-tin oxide thin-film transistor and its MIS capacitance.
    Kim H; Kwack YJ; Yun EJ; Choi WS
    Sci Rep; 2016 Sep; 6():33576. PubMed ID: 27641430
    [TBL] [Abstract][Full Text] [Related]  

  • 22. Investigation of 1200 V SiC MOSFETs' Surge Reliability.
    Li H; Wang J; Ren N; Xu H; Sheng K
    Micromachines (Basel); 2019 Jul; 10(7):. PubMed ID: 31323884
    [TBL] [Abstract][Full Text] [Related]  

  • 23. Degradation mechanisms in gate-all-around silicon Nanowire field effect transistor under electrostatic discharge stress - a modeling approach.
    Tan CM; Chen X
    Nano Converg; 2014; 1(1):11. PubMed ID: 28191394
    [TBL] [Abstract][Full Text] [Related]  

  • 24. 3-D stacked polycrystalline-silicon-MOSFET-based capacitorless DRAM with superior immunity to grain-boundary's influence.
    Lee SH; Park J; Min SR; Kim GU; Jang J; Bae JH; Lee SH; Kang IM
    Sci Rep; 2022 Aug; 12(1):14455. PubMed ID: 36002621
    [TBL] [Abstract][Full Text] [Related]  

  • 25. Negative Capacitance in Organic/Ferroelectric Capacitor to Implement Steep Switching MOS Devices.
    Jo J; Choi WY; Park JD; Shim JW; Yu HY; Shin C
    Nano Lett; 2015 Jul; 15(7):4553-6. PubMed ID: 26103511
    [TBL] [Abstract][Full Text] [Related]  

  • 26. Modulation of Quantum Tunneling via a Vertical Two-Dimensional Black Phosphorus and Molybdenum Disulfide p-n Junction.
    Liu X; Qu D; Li HM; Moon I; Ahmed F; Kim C; Lee M; Choi Y; Cho JH; Hone JC; Yoo WJ
    ACS Nano; 2017 Sep; 11(9):9143-9150. PubMed ID: 28787570
    [TBL] [Abstract][Full Text] [Related]  

  • 27. Investigations on Cylindrical Surrounding Double-gate (CSDG) Mosfet using AL
    Gowthaman N; Srivastava VM
    Recent Pat Nanotechnol; 2024; 18(3):374-385. PubMed ID: 37132315
    [TBL] [Abstract][Full Text] [Related]  

  • 28. Single-electron effects in non-overlapped multiple-gate silicon-on-insulator metal-oxide-semiconductor field-effect transistors.
    Lee W; Su P
    Nanotechnology; 2009 Feb; 20(6):065202. PubMed ID: 19417374
    [TBL] [Abstract][Full Text] [Related]  

  • 29. An Improved 4H-SiC MESFET with a Partially Low Doped Channel.
    Jia H; Tong Y; Li T; Zhu S; Liang Y; Wang X; Zeng T; Yang Y
    Micromachines (Basel); 2019 Aug; 10(9):. PubMed ID: 31443584
    [TBL] [Abstract][Full Text] [Related]  

  • 30. Single electron transistor with P-type sidewall spacer gates.
    Lee JH; Li DH; Lee JE; Kang KC; Kim K; Park BG
    J Nanosci Nanotechnol; 2011 Jul; 11(7):5618-22. PubMed ID: 22121580
    [TBL] [Abstract][Full Text] [Related]  

  • 31. Analysis for DC and RF Characteristics Recessed-Gate GaN MOSFET Using Stacked TiO
    Min SR; Cho MS; Lee SH; Park J; An HD; Kim GU; Yoon YJ; Seo JH; Jang JW; Bae JH; Lee SH; Kang IM
    Materials (Basel); 2022 Jan; 15(3):. PubMed ID: 35160771
    [TBL] [Abstract][Full Text] [Related]  

  • 32. Improving ESD Protection Robustness Using SiGe Source/Drain Regions in Tunnel FET.
    Yang Z; Yang Y; Yu N; Liou JJ
    Micromachines (Basel); 2018 Dec; 9(12):. PubMed ID: 30545073
    [TBL] [Abstract][Full Text] [Related]  

  • 33. A Review of Sharp-Switching Band-Modulation Devices.
    Cristoloveanu S; Lacord J; Martinie S; Navarro C; Gamiz F; Wan J; Dirani HE; Lee K; Zaslavsky A
    Micromachines (Basel); 2021 Dec; 12(12):. PubMed ID: 34945390
    [TBL] [Abstract][Full Text] [Related]  

  • 34. Electrical Properties of Top-Gate
    Ma J; Yoo G
    J Nanosci Nanotechnol; 2020 Jan; 20(1):516-519. PubMed ID: 31383202
    [TBL] [Abstract][Full Text] [Related]  

  • 35. T-Channel Field Effect Transistor with Three InputTerminals (Ti-TcFET).
    Chen Z; Hu J; Ye H; Chu Z
    Micromachines (Basel); 2020 Jan; 11(1):. PubMed ID: 31936107
    [TBL] [Abstract][Full Text] [Related]  

  • 36. Design of a Capacitorless DRAM Based on a Polycrystalline-Silicon Dual-Gate MOSFET with a Fin-Shaped Structure.
    An HD; Lee SH; Park J; Min SR; Kim GU; Yoon YJ; Seo JH; Cho MS; Jang J; Bae JH; Lee SH; Kang IM
    Nanomaterials (Basel); 2022 Oct; 12(19):. PubMed ID: 36234653
    [TBL] [Abstract][Full Text] [Related]  

  • 37. Dopant distributions in n-MOSFET structure observed by atom probe tomography.
    Inoue K; Yano F; Nishida A; Takamizawa H; Tsunomura T; Nagai Y; Hasegawa M
    Ultramicroscopy; 2009 Nov; 109(12):1479-84. PubMed ID: 19775815
    [TBL] [Abstract][Full Text] [Related]  

  • 38. Steep-slope hysteresis-free negative capacitance MoS
    Si M; Su CJ; Jiang C; Conrad NJ; Zhou H; Maize KD; Qiu G; Wu CT; Shakouri A; Alam MA; Ye PD
    Nat Nanotechnol; 2018 Jan; 13(1):24-28. PubMed ID: 29255287
    [TBL] [Abstract][Full Text] [Related]  

  • 39. Investigation of Positive Bias Temperature Instability Characteristics of Fully Depleted Silicon on Insulator Tunneling Field Effect Transistor with High-k Dielectric Gate Stacks.
    Song HS; Kim SY; Lim DH; Kwon SK; Choi CH; Lee GW; Lee HD
    J Nanosci Nanotechnol; 2019 Oct; 19(10):6131-6134. PubMed ID: 31026922
    [TBL] [Abstract][Full Text] [Related]  

  • 40. Inversion channel diamond metal-oxide-semiconductor field-effect transistor with normally off characteristics.
    Matsumoto T; Kato H; Oyama K; Makino T; Ogura M; Takeuchi D; Inokuma T; Tokuda N; Yamasaki S
    Sci Rep; 2016 Aug; 6():31585. PubMed ID: 27545201
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 10.