These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

109 related articles for article (PubMed ID: 31127388)

  • 1. Comparative Study of Negative Capacitance Field-Effect Transistors with Different MOS Capacitances.
    Li J; Liu Y; Han G; Zhou J; Hao Y
    Nanoscale Res Lett; 2019 May; 14(1):171. PubMed ID: 31127388
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Van der Waals negative capacitance transistors.
    Wang X; Yu P; Lei Z; Zhu C; Cao X; Liu F; You L; Zeng Q; Deng Y; Zhu C; Zhou J; Fu Q; Wang J; Huang Y; Liu Z
    Nat Commun; 2019 Jul; 10(1):3037. PubMed ID: 31292435
    [TBL] [Abstract][Full Text] [Related]  

  • 3. ZrO
    Zhang S; Liu H; Zhou J; Liu Y; Han G; Hao Y
    Nanoscale Res Lett; 2021 Feb; 16(1):21. PubMed ID: 33532927
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Record-Low Subthreshold-Swing Negative-Capacitance 2D Field-Effect Transistors.
    Wang Y; Bai X; Chu J; Wang H; Rao G; Pan X; Du X; Hu K; Wang X; Gong C; Yin C; Yang C; Yan C; Wu C; Shuai Y; Wang X; Liao M; Xiong J
    Adv Mater; 2020 Nov; 32(46):e2005353. PubMed ID: 33043512
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Germanium Negative Capacitance Field Effect Transistors: Impacts of Zr Composition in Hf
    Peng Y; Liu Y; Han G; Zhang J; Hao Y
    Nanoscale Res Lett; 2019 Apr; 14(1):125. PubMed ID: 30949867
    [TBL] [Abstract][Full Text] [Related]  

  • 6. In
    Xu Q; Liu X; Wan B; Yang Z; Li F; Lu J; Hu G; Pan C; Wang ZL
    ACS Nano; 2018 Sep; 12(9):9608-9616. PubMed ID: 30188684
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Sustained Sub-60 mV/decade Switching via the Negative Capacitance Effect in MoS
    McGuire FA; Lin YC; Price K; Rayner GB; Khandelwal S; Salahuddin S; Franklin AD
    Nano Lett; 2017 Aug; 17(8):4801-4806. PubMed ID: 28691824
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Negative Capacitance Field Effect Transistors based on Van der Waals 2D Materials.
    Chen RS; Lu Y
    Small; 2024 Sep; 20(39):e2304445. PubMed ID: 37899295
    [TBL] [Abstract][Full Text] [Related]  

  • 9. WSe
    Wu X; Gao S; Xiao L; Wang J
    ACS Appl Mater Interfaces; 2024 Aug; 16(32):42597-42607. PubMed ID: 39102741
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Impact of Ferroelectric Capacitor's Electrode Area on the Performance of Negative Capacitance Field Effect Transistor.
    Cho H; Shin J; Shin C
    J Nanosci Nanotechnol; 2019 Oct; 19(10):6087-6090. PubMed ID: 31026913
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Steep switching devices for low power applications: negative differential capacitance/resistance field effect transistors.
    Ko E; Shin J; Shin C
    Nano Converg; 2018; 5(1):2. PubMed ID: 29399434
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Negative Capacitance in Organic/Ferroelectric Capacitor to Implement Steep Switching MOS Devices.
    Jo J; Choi WY; Park JD; Shim JW; Yu HY; Shin C
    Nano Lett; 2015 Jul; 15(7):4553-6. PubMed ID: 26103511
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Impacts of HfZrO thickness and anneal temperature on performance of MoS
    Tao X; Liu L; Yang L; Xu JP
    Nanotechnology; 2021 Aug; 32(44):. PubMed ID: 34330115
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Oxygen environmental and passivation effects on molybdenum disulfide field effect transistors.
    Park W; Park J; Jang J; Lee H; Jeong H; Cho K; Hong S; Lee T
    Nanotechnology; 2013 Mar; 24(9):095202. PubMed ID: 23403849
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Artificial Sub-60 Millivolts/Decade Switching in a Metal-Insulator-Metal-Insulator-Semiconductor Transistor without a Ferroelectric Component.
    Wu P; Appenzeller J
    ACS Nano; 2021 Mar; 15(3):5158-5164. PubMed ID: 33705109
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Effect of Various Geometry Parameters on the Performance of Nanoplate Field Effect Transistor with Negative Capacitance.
    Woo C; Lee JK; Kang M; Jeon J; Shin H
    J Nanosci Nanotechnol; 2019 Oct; 19(10):6736-6740. PubMed ID: 31027020
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Control of Ambipolar Transport in SnO Thin-Film Transistors by Back-Channel Surface Passivation for High Performance Complementary-like Inverters.
    Luo H; Liang L; Cao H; Dai M; Lu Y; Wang M
    ACS Appl Mater Interfaces; 2015 Aug; 7(31):17023-31. PubMed ID: 26189702
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Effect of hysteretic and non-hysteretic negative capacitance on tunnel FETs DC performance.
    Saeidi A; Jazaeri F; Stolichnov I; Luong GV; Zhao QT; Mantl S; Ionescu AM
    Nanotechnology; 2018 Mar; 29(9):095202. PubMed ID: 29373324
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Negative Capacitance beyond Ferroelectric Switches.
    Kumar A; Balakrishna Pillai P; Song X; De Souza MM
    ACS Appl Mater Interfaces; 2018 Jun; 10(23):19812-19819. PubMed ID: 29788714
    [TBL] [Abstract][Full Text] [Related]  

  • 20. A Novel Graphene Metal Semi-Insulator Semiconductor Transistor and Its New Super-Low Power Mechanism.
    Li P; Zeng RZ; Liao YB; Zhang QW; Zhou JH
    Sci Rep; 2019 Mar; 9(1):3642. PubMed ID: 30842466
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 6.