These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
163 related articles for article (PubMed ID: 31163745)
21. Impact of residual gas on the optoelectronic properties of Cs-sensitized In Fang Q; Shen Y; Zhang S; Yang X; Duan L; Chen L; Xu S; Gao M; Pan H J Colloid Interface Sci; 2021 Jul; 594():47-53. PubMed ID: 33756367 [TBL] [Abstract][Full Text] [Related]
22. Correlation between Optical Localization-State and Electrical Deep-Level State in In Ahn IH; Kim DY; Lee S Nanomaterials (Basel); 2021 Feb; 11(3):. PubMed ID: 33652753 [TBL] [Abstract][Full Text] [Related]
23. Intersubband absorption in In0.53Ga0.47As/In0.52Al0.48As multiple quantum wells. Asai H; Kawamura Y Phys Rev B Condens Matter; 1991 Feb; 43(6):4748-4759. PubMed ID: 9997843 [No Abstract] [Full Text] [Related]
24. 170 GHz Uni-Traveling Carrier Photodiodes for InP-based photonic integrated circuits. Rouvalis E; Chtioui M; van Dijk F; Lelarge F; Fice MJ; Renaud CC; Carpintero G; Seeds AJ Opt Express; 2012 Aug; 20(18):20090-5. PubMed ID: 23037061 [TBL] [Abstract][Full Text] [Related]
25. Hybrid integration of modified uni-traveling carrier photodiodes on a multi-layer silicon nitride platform using total reflection mirrors. Shen Y; Feng S; Xie X; Zang J; Li S; Su T; Shang K; Lai W; Liu G; Ben Yoo SJ; Campbell JC Opt Express; 2017 May; 25(9):9521-9527. PubMed ID: 28468334 [TBL] [Abstract][Full Text] [Related]
26. High-bandwidth uni-traveling carrier waveguide photodetector on an InP-membrane-on-silicon platform. Shen L; Jiao Y; Yao W; Cao Z; van Engelen JP; Roelkens G; Smit MK; van der Tol JJ Opt Express; 2016 Apr; 24(8):8290-301. PubMed ID: 27137267 [TBL] [Abstract][Full Text] [Related]
27. Optical study of the electronic states of In0.53Ga0.47As/In0.52Al0.48As quantum wells in high electric fields. Satzke K; Weiser G; Stolz W; Ploog K Phys Rev B Condens Matter; 1991 Jan; 43(3):2263-2271. PubMed ID: 9997500 [No Abstract] [Full Text] [Related]
28. Electric subbands in an In0.65Ga0.35As quantum well between In0.52Al0.48As and In0.53Ga0.47As potential barriers. Kim TW; Lee JI; Kang KN; Lee KS; Yoo KH Phys Rev B Condens Matter; 1991 Dec; 44(23):12891-12893. PubMed ID: 9999468 [No Abstract] [Full Text] [Related]
29. Effects of carrier injection profile on low noise thin Al Pinel LLG; Dimler SJ; Zhou X; Abdullah S; Zhang S; Tan CH; Ng JS Opt Express; 2018 Feb; 26(3):3568-3576. PubMed ID: 29401884 [TBL] [Abstract][Full Text] [Related]
30. Optimization of MBE Growth Conditions of In Gutowski P; Sankowska I; Słupiński T; Pierścińska D; Pierściński K; Kuźmicz A; Gołaszewska-Malec K; Bugajski M Materials (Basel); 2019 May; 12(10):. PubMed ID: 31108890 [TBL] [Abstract][Full Text] [Related]
31. Droplet epitaxy of InAs/InP quantum dots via MOVPE by using an InGaAs interlayer. Sala EM; Godsland M; Na YI; Trapalis A; Heffernan J Nanotechnology; 2021 Nov; 33(6):. PubMed ID: 34731846 [TBL] [Abstract][Full Text] [Related]
32. Theoretical and experimental study of the optical-absorption spectrum of exciton resonance in In0.53Ga0.47As/InP quantum wells. Sugawara M; Fujii T; Yamazaki S; Nakajima K Phys Rev B Condens Matter; 1990 Nov; 42(15):9587-9597. PubMed ID: 9995200 [No Abstract] [Full Text] [Related]
33. High overall performance uni-traveling carrier photodiodes for sub-THz wave generation. Chen J; Hao R; Zhen Z; Jiang H; Tang K; Chen C; Jin S Appl Opt; 2023 Mar; 62(7):1745-1752. PubMed ID: 37132921 [TBL] [Abstract][Full Text] [Related]
34. Electron-phonon interactions in n-type In0.53Ga0.47As and In0.52Al0.48As studied by inelastic light scattering. Maslar JE; Dorsten JF; Bohn PW; Agarwala S; Adesida I; Caneau C; Bhat R Phys Rev B Condens Matter; 1994 Dec; 50(23):17143-17150. PubMed ID: 9976114 [No Abstract] [Full Text] [Related]
35. THz generation at 1.55 µm excitation: six-fold increase in THz conversion efficiency by separated photoconductive and trapping regions. Dietz RJ; Gerhard M; Stanze D; Koch M; Sartorius B; Schell M Opt Express; 2011 Dec; 19(27):25911-7. PubMed ID: 22274179 [TBL] [Abstract][Full Text] [Related]
36. Electroabsorption in In0.53Ga0.47As/In0.52Al0.48As asymmetric coupled quantum wells grown on InP substrates. Leavitt RP; Little JW; Horst SC Phys Rev B Condens Matter; 1989 Aug; 40(6):4183-4186. PubMed ID: 9992395 [No Abstract] [Full Text] [Related]
37. Field localization of electrons in In0.53Ga0.47As/In0.82Ga0.18As0.40P0.60 quantum wells studied by electroabsorption. Weiser G; Satzke K; Schlichtherle B; Goldstein L; Perales A Phys Rev B Condens Matter; 1992 Jun; 45(24):14376-14379. PubMed ID: 10001568 [No Abstract] [Full Text] [Related]