These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
172 related articles for article (PubMed ID: 31165533)
1. Modeling of Negative Capacitance in Ferroelectric Thin Films. Park HW; Roh J; Lee YB; Hwang CS Adv Mater; 2019 Aug; 31(32):e1805266. PubMed ID: 31165533 [TBL] [Abstract][Full Text] [Related]
2. Multi-Domain Negative Capacitance Effects in Metal-Ferroelectric-Insulator-Semiconductor/Metal Stacks: A Phase-field Simulation Based Study. Saha AK; Gupta SK Sci Rep; 2020 Jun; 10(1):10207. PubMed ID: 32576840 [TBL] [Abstract][Full Text] [Related]
3. On the stabilization of ferroelectric negative capacitance in nanoscale devices. Hoffmann M; Pešić M; Slesazeck S; Schroeder U; Mikolajick T Nanoscale; 2018 Jun; 10(23):10891-10899. PubMed ID: 29869663 [TBL] [Abstract][Full Text] [Related]
4. Time-Dependent Negative Capacitance Effects in Al2O3/BaTiO3 Bilayers. Kim YJ; Yamada H; Moon T; Kwon YJ; An CH; Kim HJ; Kim KD; Lee YH; Hyun SD; Park MH; Hwang CS Nano Lett; 2016 Jul; 16(7):4375-81. PubMed ID: 27231754 [TBL] [Abstract][Full Text] [Related]
5. Thickness-Dependent Evolution of Piezoresponses and Stripe 90° Domains in (101)-Oriented Ferroelectric PbTiO Feng Y; Tang Y; Ma D; Zhu Y; Zou M; Han M; Ma J; Ma X ACS Appl Mater Interfaces; 2018 Jul; 10(29):24627-24637. PubMed ID: 29969007 [TBL] [Abstract][Full Text] [Related]
6. Macroscopic and microscopic picture of negative capacitance operation in ferroelectric capacitors. Esseni D; Fontanini R Nanoscale; 2021 Jun; 13(21):9641-9650. PubMed ID: 34008596 [TBL] [Abstract][Full Text] [Related]
7. Frustration of Negative Capacitance in Al2O3/BaTiO3 Bilayer Structure. Kim YJ; Park MH; Lee YH; Kim HJ; Jeon W; Moon T; Kim KD; Jeong DS; Yamada H; Hwang CS Sci Rep; 2016 Jan; 6():19039. PubMed ID: 26742878 [TBL] [Abstract][Full Text] [Related]
9. Voltage Drop in a Ferroelectric Single Layer Capacitor by Retarded Domain Nucleation. Kim YJ; Park HW; Hyun SD; Kim HJ; Kim KD; Lee YH; Moon T; Lee YB; Park MH; Hwang CS Nano Lett; 2017 Dec; 17(12):7796-7802. PubMed ID: 29111746 [TBL] [Abstract][Full Text] [Related]
10. Unveiling the double-well energy landscape in a ferroelectric layer. Hoffmann M; Fengler FPG; Herzig M; Mittmann T; Max B; Schroeder U; Negrea R; Lucian P; Slesazeck S; Mikolajick T Nature; 2019 Jan; 565(7740):464-467. PubMed ID: 30643206 [TBL] [Abstract][Full Text] [Related]
11. Giant negative electrocaloric effect induced by domain transition in the strained ferroelectric thin film. Hou X; Wu H; Li H; Chen H; Wang J J Phys Condens Matter; 2018 Nov; 30(46):465401. PubMed ID: 30284538 [TBL] [Abstract][Full Text] [Related]
12. Mechanism of the Wake-Up and the Split-Up in AlO Kim MJ; Kim CJ; Kang BS Nanomaterials (Basel); 2023 Jul; 13(14):. PubMed ID: 37513157 [TBL] [Abstract][Full Text] [Related]
13. Artificial Sub-60 Millivolts/Decade Switching in a Metal-Insulator-Metal-Insulator-Semiconductor Transistor without a Ferroelectric Component. Wu P; Appenzeller J ACS Nano; 2021 Mar; 15(3):5158-5164. PubMed ID: 33705109 [TBL] [Abstract][Full Text] [Related]
14. A phase-field study of the scaling law in free-standing ferroelectric thin films. Yin B; Mao H; Qu S Nanotechnology; 2015 Dec; 26(50):505701. PubMed ID: 26580133 [TBL] [Abstract][Full Text] [Related]
15. Negative Capacitance beyond Ferroelectric Switches. Kumar A; Balakrishna Pillai P; Song X; De Souza MM ACS Appl Mater Interfaces; 2018 Jun; 10(23):19812-19819. PubMed ID: 29788714 [TBL] [Abstract][Full Text] [Related]
16. Low value for the static background dielectric constant in epitaxial PZT thin films. Boni GA; Chirila CF; Hrib L; Negrea R; Filip LD; Pintilie I; Pintilie L Sci Rep; 2019 Oct; 9(1):14698. PubMed ID: 31605006 [TBL] [Abstract][Full Text] [Related]
17. Comprehensive study of high pressure annealing on the ferroelectric properties of Hf Oh C; Tewari A; Kim K; Kumar US; Shin C; Ahn M; Jeon S Nanotechnology; 2019 Dec; 30(50):505204. PubMed ID: 31426039 [TBL] [Abstract][Full Text] [Related]
18. Low Voltage Operating 2D MoS Zhang S; Liu Y; Zhou J; Ma M; Gao A; Zheng B; Li L; Su X; Han G; Zhang J; Shi Y; Wang X; Hao Y Nanoscale Res Lett; 2020 Aug; 15(1):157. PubMed ID: 32743764 [TBL] [Abstract][Full Text] [Related]
19. Formation of polarization needle-like domain and its unusual switching in compositionally graded ferroelectric thin films: an improved phase field model. Van Lich L; Dinh VH RSC Adv; 2019 Mar; 9(13):7575-7586. PubMed ID: 35519974 [TBL] [Abstract][Full Text] [Related]
20. Reversible Mechanical Switching of Ferroelastic Stripe Domains in Multiferroic Thin Films. Sun F; Wu M; Ren J; Wang X; Yang H; Zhang X; Chen W; Zheng Y ACS Appl Mater Interfaces; 2024 Jun; 16(25):32425-32433. PubMed ID: 38865279 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]