These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
279 related articles for article (PubMed ID: 31207877)
1. Pinch-Off Formation in Monolayer and Multilayers MoS Vaknin Y; Dagan R; Rosenwaks Y Nanomaterials (Basel); 2019 Jun; 9(6):. PubMed ID: 31207877 [TBL] [Abstract][Full Text] [Related]
2. Schottky Barrier Height and Image Force Lowering in Monolayer MoS Vaknin Y; Dagan R; Rosenwaks Y Nanomaterials (Basel); 2020 Nov; 10(12):. PubMed ID: 33255993 [TBL] [Abstract][Full Text] [Related]
3. Short channel monolayer MoS Bi K; Liu H; Chen Y; Luo F; Shu Z; Lin J; Liu S; Liu H; Zeng Z; Dai P; Zhu M; Duan H Nanotechnology; 2019 Jul; 30(29):295301. PubMed ID: 30917350 [TBL] [Abstract][Full Text] [Related]
5. Bandgap, mid-gap states, and gating effects in MoS2. Lu CP; Li G; Mao J; Wang LM; Andrei EY Nano Lett; 2014 Aug; 14(8):4628-33. PubMed ID: 25004377 [TBL] [Abstract][Full Text] [Related]
6. Facile Exfoliation for High-Quality Molybdenum Disulfide Nanoflakes and Relevant Field-Effect Transistors Developed With Thermal Treatment. Zhang Y; Chen X; Zhang H; Hu S; Zhao G; Zhang M; Qin W; Wang Z; Huang X; Wang J Front Chem; 2021; 9():650901. PubMed ID: 33981671 [TBL] [Abstract][Full Text] [Related]
7. MoS He X; Chow W; Liu F; Tay B; Liu Z Small; 2017 Jan; 13(2):. PubMed ID: 27762499 [TBL] [Abstract][Full Text] [Related]
8. Direct Assessment of Defective Regions in Monolayer MoS Minj A; Mootheri V; Banerjee S; Nalin Mehta A; Serron J; Hantschel T; Asselberghs I; Goux L; Kar GS; Heyns M; Lin DHC ACS Nano; 2024 Apr; 18(15):10653-10666. PubMed ID: 38556983 [TBL] [Abstract][Full Text] [Related]
9. Impact of Contact on the Operation and Performance of Back-Gated Monolayer MoS2 Field-Effect-Transistors. Liu W; Sarkar D; Kang J; Cao W; Banerjee K ACS Nano; 2015 Aug; 9(8):7904-12. PubMed ID: 26039221 [TBL] [Abstract][Full Text] [Related]
10. Masih Das P; Drndić M ACS Nano; 2020 Jun; 14(6):7389-7397. PubMed ID: 32379420 [TBL] [Abstract][Full Text] [Related]
11. Nanodomain Engineering for Programmable Ferroelectric Devices. Lipatov A; Li T; Vorobeva NS; Sinitskii A; Gruverman A Nano Lett; 2019 May; 19(5):3194-3198. PubMed ID: 30943040 [TBL] [Abstract][Full Text] [Related]
12. Dramatic Reduction of Contact Resistance via Ultrathin LiF in Two-Dimensional MoS Cho H; Kang D; Lee Y; Bae H; Hong S; Cho Y; Kim K; Yi Y; Park JH; Im S Nano Lett; 2021 Apr; 21(8):3503-3510. PubMed ID: 33856222 [TBL] [Abstract][Full Text] [Related]
13. Probing the Field-Effect Transistor with Monolayer MoS Han T; Liu H; Wang S; Chen S; Xie H; Yang K Nanomaterials (Basel); 2019 Aug; 9(9):. PubMed ID: 31462000 [TBL] [Abstract][Full Text] [Related]
14. Wafer-scale transferred multilayer MoS Zhang S; Xu H; Liao F; Sun Y; Ba K; Sun Z; Qiu ZJ; Xu Z; Zhu H; Chen L; Sun Q; Zhou P; Bao W; Zhang DW Nanotechnology; 2019 Apr; 30(17):174002. PubMed ID: 30641493 [TBL] [Abstract][Full Text] [Related]
15. Atomic Layer Etching Mechanism of MoS Kim KS; Kim KH; Nam Y; Jeon J; Yim S; Singh E; Lee JY; Lee SJ; Jung YS; Yeom GY; Kim DW ACS Appl Mater Interfaces; 2017 Apr; 9(13):11967-11976. PubMed ID: 28306240 [TBL] [Abstract][Full Text] [Related]