These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

164 related articles for article (PubMed ID: 31245534)

  • 1. High-speed black phosphorus field-effect transistors approaching ballistic limit.
    Li X; Yu Z; Xiong X; Li T; Gao T; Wang R; Huang R; Wu Y
    Sci Adv; 2019 Jun; 5(6):eaau3194. PubMed ID: 31245534
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Large-Velocity Saturation in Thin-Film Black Phosphorus Transistors.
    Chen X; Chen C; Levi A; Houben L; Deng B; Yuan S; Ma C; Watanabe K; Taniguchi T; Naveh D; Du X; Xia F
    ACS Nano; 2018 May; 12(5):5003-5010. PubMed ID: 29714472
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics.
    Xia F; Wang H; Jia Y
    Nat Commun; 2014 Jul; 5():4458. PubMed ID: 25041752
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Black Phosphorus Flexible Thin Film Transistors at Gighertz Frequencies.
    Zhu W; Park S; Yogeesh MN; McNicholas KM; Bank SR; Akinwande D
    Nano Lett; 2016 Apr; 16(4):2301-6. PubMed ID: 26977902
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Ultimate Limit in Optoelectronic Performances of Monolayer WSe
    Xie Z; Li G; Xia S; Liu C; Zhang S; Zeng Z; Liu X; Flandre D; Fan Z; Liao L; Zou X
    Nano Lett; 2023 Jul; 23(14):6664-6672. PubMed ID: 37432041
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Interface Engineering for the Enhancement of Carrier Transport in Black Phosphorus Transistor with Ultra-Thin High-k Gate Dielectric.
    Ling ZP; Zhu JT; Liu X; Ang KW
    Sci Rep; 2016 May; 6():26609. PubMed ID: 27222074
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Black Phosphorus Based Field Effect Transistors with Simultaneously Achieved Near Ideal Subthreshold Swing and High Hole Mobility at Room Temperature.
    Liu X; Ang KW; Yu W; He J; Feng X; Liu Q; Jiang H; Dan Tang ; Wen J; Lu Y; Liu W; Cao P; Han S; Wu J; Liu W; Wang X; Zhu D; He Z
    Sci Rep; 2016 Apr; 6():24920. PubMed ID: 27102711
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Black phosphorus radio-frequency transistors.
    Wang H; Wang X; Xia F; Wang L; Jiang H; Xia Q; Chin ML; Dubey M; Han SJ
    Nano Lett; 2014 Nov; 14(11):6424-9. PubMed ID: 25347787
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Performance and Reliability Improvement under High Current Densities in Black Phosphorus Transistors by Interface Engineering.
    Li X; Wu J; Ye Y; Li S; Li T; Xiong X; Xu X; Gao T; Xie X; Wu Y
    ACS Appl Mater Interfaces; 2019 Jan; 11(1):1587-1594. PubMed ID: 30540166
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Accurate Threshold Voltage Reliability Evaluation of Thin Al
    Goyal N; Parihar N; Jawa H; Mahapatra S; Lodha S
    ACS Appl Mater Interfaces; 2019 Jul; 11(26):23673-23680. PubMed ID: 31252490
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Synthesis of Crystalline Black Phosphorus Thin Film on Sapphire.
    Li C; Wu Y; Deng B; Xie Y; Guo Q; Yuan S; Chen X; Bhuiyan M; Wu Z; Watanabe K; Taniguchi T; Wang H; Cha JJ; Snure M; Fei Y; Xia F
    Adv Mater; 2018 Feb; 30(6):. PubMed ID: 29314276
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Dual-Gate Black Phosphorus Field-Effect Transistors with Hexagonal Boron Nitride as Dielectric and Passivation Layers.
    Ra HS; Lee AY; Kwak DH; Jeong MH; Lee JS
    ACS Appl Mater Interfaces; 2018 Jan; 10(1):925-932. PubMed ID: 29256593
    [TBL] [Abstract][Full Text] [Related]  

  • 13. High-quality sandwiched black phosphorus heterostructure and its quantum oscillations.
    Chen X; Wu Y; Wu Z; Han Y; Xu S; Wang L; Ye W; Han T; He Y; Cai Y; Wang N
    Nat Commun; 2015 Jun; 6():7315. PubMed ID: 26099721
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Back gated multilayer InSe transistors with enhanced carrier mobilities via the suppression of carrier scattering from a dielectric interface.
    Feng W; Zheng W; Cao W; Hu P
    Adv Mater; 2014 Oct; 26(38):6587-93. PubMed ID: 25167845
    [TBL] [Abstract][Full Text] [Related]  

  • 15. High-Performance Black Phosphorus Field-Effect Transistors with Long-Term Air Stability.
    He D; Wang Y; Huang Y; Shi Y; Wang X; Duan X
    Nano Lett; 2019 Jan; 19(1):331-337. PubMed ID: 30511871
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Black Phosphorus High-Frequency Transistors with Local Contact Bias.
    Li C; Xiong K; Li L; Guo Q; Chen X; Madjar A; Watanabe K; Taniguchi T; Hwang JCM; Xia F
    ACS Nano; 2020 Feb; 14(2):2118-2125. PubMed ID: 31922387
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Ultrashort Channel Length Black Phosphorus Field-Effect Transistors.
    Miao J; Zhang S; Cai L; Scherr M; Wang C
    ACS Nano; 2015 Sep; 9(9):9236-43. PubMed ID: 26277886
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Mechanisms of current fluctuation in ambipolar black phosphorus field-effect transistors.
    Li X; Du Y; Si M; Yang L; Li S; Li T; Xiong X; Ye P; Wu Y
    Nanoscale; 2016 Feb; 8(6):3572-8. PubMed ID: 26806878
    [TBL] [Abstract][Full Text] [Related]  

  • 19. High-Field Transport and Velocity Saturation in Synthetic Monolayer MoS
    Smithe KKH; English CD; Suryavanshi SV; Pop E
    Nano Lett; 2018 Jul; 18(7):4516-4522. PubMed ID: 29927605
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Sulfur-Doped Black Phosphorus Field-Effect Transistors with Enhanced Stability.
    Lv W; Yang B; Wang B; Wan W; Ge Y; Yang R; Hao C; Xiang J; Zhang B; Zeng Z; Liu Z
    ACS Appl Mater Interfaces; 2018 Mar; 10(11):9663-9668. PubMed ID: 29481035
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 9.