220 related articles for article (PubMed ID: 31257841)
1. Oxide Heteroepitaxy-Based Flexible Ferroelectric Transistor.
Tsai MF; Jiang J; Shao PW; Lai YH; Chen JW; Ho SZ; Chen YC; Tsai DP; Chu YH
ACS Appl Mater Interfaces; 2019 Jul; 11(29):25882-25890. PubMed ID: 31257841
[TBL] [Abstract][Full Text] [Related]
2. Nonvolatile ferroelectric field effect transistor based on a vanadium dioxide nanowire with large on- and off-field resistance switching.
Zhang Y; Xiong W; Chen W; Luo X; Zhang X; Zheng Y
Phys Chem Chem Phys; 2020 Feb; 22(8):4685-4691. PubMed ID: 32057040
[TBL] [Abstract][Full Text] [Related]
3. Transparent Antiradiative Ferroelectric Heterostructure Based on Flexible Oxide Heteroepitaxy.
Ma CH; Jiang J; Shao PW; Peng QX; Huang CW; Wu PC; Lee JT; Lai YH; Tsai DP; Wu JM; Lo SC; Wu WW; Zhou YC; Chiu PW; Chu YH
ACS Appl Mater Interfaces; 2018 Sep; 10(36):30574-30580. PubMed ID: 30118205
[TBL] [Abstract][Full Text] [Related]
4. Flexible ferroelectric element based on van der Waals heteroepitaxy.
Jiang J; Bitla Y; Huang CW; Do TH; Liu HJ; Hsieh YH; Ma CH; Jang CY; Lai YH; Chiu PW; Wu WW; Chen YC; Zhou YC; Chu YH
Sci Adv; 2017 Jun; 3(6):e1700121. PubMed ID: 28630922
[TBL] [Abstract][Full Text] [Related]
5. Oxide Heteroepitaxy for Flexible Optoelectronics.
Bitla Y; Chen C; Lee HC; Do TH; Ma CH; Qui LV; Huang CW; Wu WW; Chang L; Chiu PW; Chu YH
ACS Appl Mater Interfaces; 2016 Nov; 8(47):32401-32407. PubMed ID: 27933841
[TBL] [Abstract][Full Text] [Related]
6. Flexible Quasi-van der Waals Ferroelectric Hafnium-Based Oxide for Integrated High-Performance Nonvolatile Memory.
Liu H; Lu T; Li Y; Ju Z; Zhao R; Li J; Shao M; Zhang H; Liang R; Wang XR; Guo R; Chen J; Yang Y; Ren TL
Adv Sci (Weinh); 2020 Oct; 7(19):2001266. PubMed ID: 33042746
[TBL] [Abstract][Full Text] [Related]
7. Tunable threshold voltage of an n-type Si nanowire ferroelectric-gate field effect transistor for high-performance nonvolatile memory applications.
Van NH; Lee JH; Sohn JI; Cha S; Whang D; Kim JM; Kang DJ
Nanotechnology; 2014 May; 25(20):205201. PubMed ID: 24784161
[TBL] [Abstract][Full Text] [Related]
8. Photovoltaic and flexible deep ultraviolet wavelength detector based on novel β-Ga
Tak BR; Yang MM; Lai YH; Chu YH; Alexe M; Singh R
Sci Rep; 2020 Sep; 10(1):16098. PubMed ID: 32999335
[TBL] [Abstract][Full Text] [Related]
9. Mechanically controllable nonlinear dielectrics.
Ko DL; Tsai MF; Chen JW; Shao PW; Tan YZ; Wang JJ; Ho SZ; Lai YH; Chueh YL; Chen YC; Tsai DP; Chen LQ; Chu YH
Sci Adv; 2020 Mar; 6(10):eaaz3180. PubMed ID: 32181365
[TBL] [Abstract][Full Text] [Related]
10. A FeFET with a novel MFMFIS gate stack: towards energy-efficient and ultrafast NVMs for neuromorphic computing.
Ali T; Mertens K; Kühnel K; Rudolph M; Oehler S; Lehninger D; Müller F; Revello R; Hoffmann R; Zimmermann K; Kämpfe T; Czernohorsky M; Seidel K; Van Houdt J; Eng LM
Nanotechnology; 2021 Jul; 32(42):. PubMed ID: 34261048
[TBL] [Abstract][Full Text] [Related]
11. A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy.
Jiang J; Bitla Y; Peng QX; Zhou YC; Chu YH
J Vis Exp; 2018 Apr; (134):. PubMed ID: 29683441
[TBL] [Abstract][Full Text] [Related]
12. Radiation-Hardened and Flexible Pb(Zr
Liu Y; Yun C; Wang Y; Xu L; Wang C; Li Z; Meng M; Song S; Li K; Li D; Chen F; Liu Y; Ji Y; You T; Ning S; Qiu L; Yang H; Li W
ACS Appl Mater Interfaces; 2023 Oct; 15(42):49362-49369. PubMed ID: 37826857
[TBL] [Abstract][Full Text] [Related]
13. Ferroelectric-Dielectric Mixed Buffer Layer for Enhanced Electrical Performance of Organic Ferroelectric Memory Transistors.
Kim JR; Boampong AA; Choi Y; Kim MH
J Nanosci Nanotechnol; 2019 Aug; 19(8):4651-4656. PubMed ID: 30913763
[TBL] [Abstract][Full Text] [Related]
14. Flexible aluminum-doped hafnium oxide ferroelectric synapse devices for neuromorphic computing.
Li Z; Wang T; Meng J; Zhu H; Sun Q; Zhang DW; Chen L
Mater Horiz; 2023 Aug; 10(9):3643-3650. PubMed ID: 37340846
[TBL] [Abstract][Full Text] [Related]
15. Flexible Heteroepitaxy of CoFe
Liu HJ; Wang CK; Su D; Amrillah T; Hsieh YH; Wu KH; Chen YC; Juang JY; Eng LM; Jen SU; Chu YH
ACS Appl Mater Interfaces; 2017 Mar; 9(8):7297-7304. PubMed ID: 28155267
[TBL] [Abstract][Full Text] [Related]
16. Bending Stability of Ferroelectric Gated Graphene Field Effect Transistor for Flexible Electronics.
Hu G; Shen Y; Shen L; Ma C; Liu M
Materials (Basel); 2023 May; 16(10):. PubMed ID: 37241425
[TBL] [Abstract][Full Text] [Related]
17. Flexible Ferroelectric Hafnia-Based Synaptic Transistor by Focused-Microwave Annealing.
Joh H; Jung M; Hwang J; Goh Y; Jung T; Jeon S
ACS Appl Mater Interfaces; 2022 Jan; 14(1):1326-1333. PubMed ID: 34928573
[TBL] [Abstract][Full Text] [Related]
18. Low Voltage Operating 2D MoS
Zhang S; Liu Y; Zhou J; Ma M; Gao A; Zheng B; Li L; Su X; Han G; Zhang J; Shi Y; Wang X; Hao Y
Nanoscale Res Lett; 2020 Aug; 15(1):157. PubMed ID: 32743764
[TBL] [Abstract][Full Text] [Related]
19. Flexible, Temperature-Resistant, and Fatigue-Free Ferroelectric Memory Based on Bi(Fe
Yang C; Han Y; Qian J; Lv P; Lin X; Huang S; Cheng Z
ACS Appl Mater Interfaces; 2019 Apr; 11(13):12647-12655. PubMed ID: 30874425
[TBL] [Abstract][Full Text] [Related]
20. Heteroepitaxy of Fe
Wu PC; Chen PF; Do TH; Hsieh YH; Ma CH; Ha TD; Wu KH; Wang YJ; Li HB; Chen YC; Juang JY; Yu P; Eng LM; Chang CF; Chiu PW; Tjeng LH; Chu YH
ACS Appl Mater Interfaces; 2016 Dec; 8(49):33794-33801. PubMed ID: 27960370
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
