152 related articles for article (PubMed ID: 31263209)
1. A New Analytic Formula for Minority Carrier Decay Length Extraction from Scanning Photocurrent Profiles in Ohmic-Contact Nanowire Devices.
Chu CH; Mao MH; Yang CW; Lin HH
Sci Rep; 2019 Jul; 9(1):9426. PubMed ID: 31263209
[TBL] [Abstract][Full Text] [Related]
2. Minority carrier decay length extraction from scanning photocurrent profiles in two-dimensional carrier transport structures.
Wei YC; Chu CH; Mao MH
Sci Rep; 2021 Nov; 11(1):21863. PubMed ID: 34751191
[TBL] [Abstract][Full Text] [Related]
3. Photocurrent Mapping in Single-Crystal Methylammonium Lead Iodide Perovskite Nanostructures.
Xiao R; Hou Y; Fu Y; Peng X; Wang Q; Gonzalez E; Jin S; Yu D
Nano Lett; 2016 Dec; 16(12):7710-7717. PubMed ID: 27960528
[TBL] [Abstract][Full Text] [Related]
4. Electric field dependent photocurrent decay length in single lead sulfide nanowire field effect transistors.
Graham R; Miller C; Oh E; Yu D
Nano Lett; 2011 Feb; 11(2):717-22. PubMed ID: 21182310
[TBL] [Abstract][Full Text] [Related]
5. Stability of Schottky and Ohmic Au Nanocatalysts to ZnO Nanowires.
Lord AM; Ramasse QM; Kepaptsoglou DM; Periwal P; Ross FM; Wilks SP
Nano Lett; 2017 Nov; 17(11):6626-6636. PubMed ID: 29024594
[TBL] [Abstract][Full Text] [Related]
6. Scanning photocurrent microscopy analysis of Si nanowire field-effect transistors fabricated by surface etching of the channel.
Allen JE; Hemesath ER; Lauhon LJ
Nano Lett; 2009 May; 9(5):1903-8. PubMed ID: 19326918
[TBL] [Abstract][Full Text] [Related]
7. Gate-dependent carrier diffusion length in lead selenide quantum dot field-effect transistors.
Otto T; Miller C; Tolentino J; Liu Y; Law M; Yu D
Nano Lett; 2013 Aug; 13(8):3463-9. PubMed ID: 23802707
[TBL] [Abstract][Full Text] [Related]
8. Scanning Photocurrent Microscopy in Single Crystal Multidimensional Hybrid Lead Bromide Perovskites.
Segura-Sanchis E; García-Aboal R; Fenollosa R; Ramiro-Manzano F; Atienzar P
Nanomaterials (Basel); 2023 Sep; 13(18):. PubMed ID: 37764599
[TBL] [Abstract][Full Text] [Related]
9. Spatial mapping of efficiency of GaN/InGaN nanowire array solar cells using scanning photocurrent microscopy.
Howell SL; Padalkar S; Yoon K; Li Q; Koleske DD; Wierer JJ; Wang GT; Lauhon LJ
Nano Lett; 2013 Nov; 13(11):5123-8. PubMed ID: 24099617
[TBL] [Abstract][Full Text] [Related]
10. Long minority carrier diffusion lengths in bridged silicon nanowires.
Triplett M; Yang Y; Léonard F; Talin AA; Islam MS; Yu D
Nano Lett; 2015 Jan; 15(1):523-9. PubMed ID: 25541642
[TBL] [Abstract][Full Text] [Related]
11. Dynamics of graded-composition and graded-doping semiconductor nanowires under local carrier modulation.
Deng W; Zou J; Peng X; Zhang J; Wang W; Zhang Y; Zhang D
Opt Express; 2016 Oct; 24(21):24347-24360. PubMed ID: 27828165
[TBL] [Abstract][Full Text] [Related]
12. Spatially resolved photoexcited charge-carrier dynamics in phase-engineered monolayer MoS2.
Yamaguchi H; Blancon JC; Kappera R; Lei S; Najmaei S; Mangum BD; Gupta G; Ajayan PM; Lou J; Chhowalla M; Crochet JJ; Mohite AD
ACS Nano; 2015 Jan; 9(1):840-9. PubMed ID: 25521210
[TBL] [Abstract][Full Text] [Related]
13. Electrothermal dynamics of semiconductor nanowires under local carrier modulation.
Fu D; Zou J; Wang K; Zhang R; Yu D; Wu J
Nano Lett; 2011 Sep; 11(9):3809-15. PubMed ID: 21790187
[TBL] [Abstract][Full Text] [Related]
14. A New Fitting Method for Ambipolar Diffusion Length Extraction in Thin Film Structures Using Photoluminescence Measurement with Scanning Excitation.
Chu CH; Mao MH; Lin YR; Lin HH
Sci Rep; 2020 Mar; 10(1):5200. PubMed ID: 32251350
[TBL] [Abstract][Full Text] [Related]
15. Evaluation of Transport Parameters in MoS
Kim YC; Nguyen VT; Lee S; Park JY; Ahn YH
ACS Appl Mater Interfaces; 2018 Feb; 10(6):5771-5778. PubMed ID: 29355012
[TBL] [Abstract][Full Text] [Related]
16. Spatially resolved plasmonically enhanced photocurrent from Au nanoparticles on a Si nanowire.
Hyun JK; Lauhon LJ
Nano Lett; 2011 Jul; 11(7):2731-4. PubMed ID: 21639402
[TBL] [Abstract][Full Text] [Related]
17. Enhanced Photoresponsivity of a GaAs Nanowire Metal-Semiconductor-Metal Photodetector by Adjusting the Fermi Level.
Chen X; Wang D; Wang T; Yang Z; Zou X; Wang P; Luo W; Li Q; Liao L; Hu W; Wei Z
ACS Appl Mater Interfaces; 2019 Sep; 11(36):33188-33193. PubMed ID: 31415147
[TBL] [Abstract][Full Text] [Related]
18. A study of lateral Schottky contacts in WSe2 and MoS2 field effect transistors using scanning photocurrent microscopy.
Yi Y; Wu C; Liu H; Zeng J; He H; Wang J
Nanoscale; 2015 Oct; 7(38):15711-8. PubMed ID: 26350431
[TBL] [Abstract][Full Text] [Related]
19. Photocurrent imaging of p-n junctions in ambipolar carbon nanotube transistors.
Ahn YH; Tsen AW; Kim B; Park YW; Park J
Nano Lett; 2007 Nov; 7(11):3320-3. PubMed ID: 17939725
[TBL] [Abstract][Full Text] [Related]
20. Controlled ambipolar doping and gate voltage dependent carrier diffusion length in lead sulfide nanowires.
Yang Y; Li J; Wu H; Oh E; Yu D
Nano Lett; 2012 Nov; 12(11):5890-6. PubMed ID: 23066756
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
