152 related articles for article (PubMed ID: 31292515)
1. Bipolar Cu/HfO
Abdul Hadi S; Humood KM; Abi Jaoude M; Abunahla H; Shehhi HFA; Mohammad B
Sci Rep; 2019 Jul; 9(1):9983. PubMed ID: 31292515
[TBL] [Abstract][Full Text] [Related]
2. Resistive switching and synaptic learning performance of a TiO
Hu L; Han W; Wang H
Nanotechnology; 2020 Apr; 31(15):155202. PubMed ID: 31860903
[TBL] [Abstract][Full Text] [Related]
3. Enhanced Memristive Performance of Double Perovskite Cs
Sun C; Luo F; Ruan L; Tong J; Yan L; Zheng Y; Han X; Zhang Y; Zhang X
Chempluschem; 2021 Nov; 86(11):1530-1536. PubMed ID: 34791820
[TBL] [Abstract][Full Text] [Related]
4. Effects of top electrode material in hafnium-oxide-based memristive systems on highly-doped Si.
Saylan S; Aldosari HM; Humood K; Abi Jaoude M; Ravaux F; Mohammad B
Sci Rep; 2020 Nov; 10(1):19541. PubMed ID: 33177566
[TBL] [Abstract][Full Text] [Related]
5. Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications.
Wang LG; Qian X; Cao YQ; Cao ZY; Fang GY; Li AD; Wu D
Nanoscale Res Lett; 2015; 10():135. PubMed ID: 25852426
[TBL] [Abstract][Full Text] [Related]
6. Customized binary and multi-level HfO
He W; Sun H; Zhou Y; Lu K; Xue K; Miao X
Sci Rep; 2017 Aug; 7(1):10070. PubMed ID: 28855562
[TBL] [Abstract][Full Text] [Related]
7. Resistive switching memory devices composed of binary transition metal oxides using sol-gel chemistry.
Lee C; Kim I; Choi W; Shin H; Cho J
Langmuir; 2009 Apr; 25(8):4274-8. PubMed ID: 19317425
[TBL] [Abstract][Full Text] [Related]
8. Robust Resistive Switching Constancy and Quantum Conductance in High-k Dielectric-Based Memristor for Neuromorphic Engineering.
Ismail M; Mahata C; Kang M; Kim S
Nanoscale Res Lett; 2022 Jun; 17(1):61. PubMed ID: 35749003
[TBL] [Abstract][Full Text] [Related]
9. Low-Power Resistive Switching Characteristic in HfO
Ding X; Feng Y; Huang P; Liu L; Kang J
Nanoscale Res Lett; 2019 May; 14(1):157. PubMed ID: 31073774
[TBL] [Abstract][Full Text] [Related]
10. Improved Performance of the Al
George T; Murugan AV
ACS Appl Mater Interfaces; 2022 Nov; 14(45):51066-51083. PubMed ID: 36397313
[TBL] [Abstract][Full Text] [Related]
11. Gradual electroforming and memristive switching in Pt/CuO(x)/Si/Pt systems.
Wei LL; Shang DS; Sun JR; Lee SB; Sun ZG; Shen BG
Nanotechnology; 2013 Aug; 24(32):325202. PubMed ID: 23867151
[TBL] [Abstract][Full Text] [Related]
12. Roles of conducting filament and non-filament regions in the Ta
Park TH; Kim HJ; Park WY; Kim SG; Choi BJ; Hwang CS
Nanoscale; 2017 May; 9(18):6010-6019. PubMed ID: 28443901
[TBL] [Abstract][Full Text] [Related]
13. Resistive Switching Characteristics of HfO
Liu CF; Tang XG; Wang LQ; Tang H; Jiang YP; Liu QX; Li WH; Tang ZH
Nanomaterials (Basel); 2019 Aug; 9(8):. PubMed ID: 31382660
[TBL] [Abstract][Full Text] [Related]
14. Resistive switching in sub-micrometric ZnO polycrystalline films.
Conti D; Laurenti M; Porro S; Giovinazzo C; Bianco S; Fra V; Chiolerio A; Pirri CF; Milano G; Ricciardi C
Nanotechnology; 2019 Feb; 30(6):065707. PubMed ID: 30523900
[TBL] [Abstract][Full Text] [Related]
15. Thickness-Dependent Resistive Switching Behavior of KCu
Wang YY; Wang ZY; Peng W; Xu JY; Chen SR; Ye B; Wu CY
J Nanosci Nanotechnol; 2019 May; 19(5):2844-2850. PubMed ID: 30501789
[TBL] [Abstract][Full Text] [Related]
16. Parylene Based Memristive Devices with Multilevel Resistive Switching for Neuromorphic Applications.
Minnekhanov AA; Emelyanov AV; Lapkin DA; Nikiruy KE; Shvetsov BS; Nesmelov AA; Rylkov VV; Demin VA; Erokhin VV
Sci Rep; 2019 Jul; 9(1):10800. PubMed ID: 31346245
[TBL] [Abstract][Full Text] [Related]
17. Resistive switching of Sn-doped In
Huang CH; Chang WC; Huang JS; Lin SM; Chueh YL
Nanoscale; 2017 May; 9(20):6920-6928. PubMed ID: 28509919
[TBL] [Abstract][Full Text] [Related]
18. Impedance spectroscopic analysis on effects of partial oxidation of TiN bottom electrode and microstructure of amorphous and crystalline HfO2 thin films on their bipolar resistive switching.
Yoon JW; Yoon JH; Lee JH; Hwang CS
Nanoscale; 2014 Jun; 6(12):6668-78. PubMed ID: 24817626
[TBL] [Abstract][Full Text] [Related]
19. Memristors Using Solution-Based IGZO Nanoparticles.
Rosa J; Kiazadeh A; Santos L; Deuermeier J; Martins R; Gomes HL; Fortunato E
ACS Omega; 2017 Nov; 2(11):8366-8372. PubMed ID: 31457375
[TBL] [Abstract][Full Text] [Related]
20. Silver/(sub-10 nm)hafnium-oxide-based resistive switching devices on silicon: characteristics and switching mechanism.
Saylan S; Jaoude MA; Humood K; Ravaux F; Shehhi HFA; Mohammad B
Nanotechnology; 2020 Apr; 31(16):165202. PubMed ID: 31914429
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]