These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

153 related articles for article (PubMed ID: 31292515)

  • 21. Silver/(sub-10 nm)hafnium-oxide-based resistive switching devices on silicon: characteristics and switching mechanism.
    Saylan S; Jaoude MA; Humood K; Ravaux F; Shehhi HFA; Mohammad B
    Nanotechnology; 2020 Apr; 31(16):165202. PubMed ID: 31914429
    [TBL] [Abstract][Full Text] [Related]  

  • 22. Electrochemical Tantalum Oxide for Resistive Switching Memories.
    Zaffora A; Cho DY; Lee KS; Di Quarto F; Waser R; Santamaria M; Valov I
    Adv Mater; 2017 Nov; 29(43):. PubMed ID: 28984996
    [TBL] [Abstract][Full Text] [Related]  

  • 23. Observation of highly reproducible resistive-switching behavior from solution-based ZnO nanorods.
    Song MY; Seo Y; Park S; Lee JH; An HM; Kim TG
    J Nanosci Nanotechnol; 2013 Sep; 13(9):6212-5. PubMed ID: 24205631
    [TBL] [Abstract][Full Text] [Related]  

  • 24. Switching-behavior improvement in HfO
    Zhang W; Lei J; Dai Y; Zhang X; Kang L; Peng B; Hu F
    Nanotechnology; 2022 Apr; 33(25):. PubMed ID: 35294938
    [TBL] [Abstract][Full Text] [Related]  

  • 25. Polarity reversion of the operation mode of HfO2-based resistive random access memory devices by inserting Hf metal layer.
    Peng CS; Chang WY; Lin MH; Chen WS; Chen F; Tsai MJ
    J Nanosci Nanotechnol; 2013 Mar; 13(3):1733-7. PubMed ID: 23755581
    [TBL] [Abstract][Full Text] [Related]  

  • 26. Resistive Switching Characteristics Improved by Visible-Light Irradiation in a Cs
    Lv F; Zhong T; Qin Y; Qin H; Wang W; Liu F; Kong W
    Nanomaterials (Basel); 2021 May; 11(6):. PubMed ID: 34064022
    [TBL] [Abstract][Full Text] [Related]  

  • 27. High performance and low power consumption resistive random access memory with Ag/Fe
    Niu Y; Jiang K; Dong X; Zheng D; Liu B; Wang H
    Nanotechnology; 2021 Oct; 32(50):. PubMed ID: 34525467
    [TBL] [Abstract][Full Text] [Related]  

  • 28. A New Approach to the Fabrication of Memristive Neuromorphic Devices: Compositionally Graded Films.
    Yoon JG
    Materials (Basel); 2020 Aug; 13(17):. PubMed ID: 32825397
    [TBL] [Abstract][Full Text] [Related]  

  • 29. Atomic Layer Deposited Oxide-Based Nanocomposite Structures with Embedded CoPt
    Wang LG; Cao ZY; Qian X; Zhu L; Cui DP; Li AD; Wu D
    ACS Appl Mater Interfaces; 2017 Feb; 9(7):6634-6643. PubMed ID: 28139921
    [TBL] [Abstract][Full Text] [Related]  

  • 30. Programmable, electroforming-free TiO
    Srivastava S; Thomas JP; Leung KT
    Nanoscale; 2019 Oct; 11(39):18159-18168. PubMed ID: 31556429
    [TBL] [Abstract][Full Text] [Related]  

  • 31. Resistive switching characteristics of HfO2-based memory devices on flexible plastics.
    Han Y; Cho K; Park S; Kim S
    J Nanosci Nanotechnol; 2014 Nov; 14(11):8191-5. PubMed ID: 25958498
    [TBL] [Abstract][Full Text] [Related]  

  • 32. Mesostructured HfO
    Zakaria MB; Nagata T; Chikyow T
    ACS Omega; 2019 Sep; 4(12):14680-14687. PubMed ID: 31552307
    [TBL] [Abstract][Full Text] [Related]  

  • 33. Unipolar resistive switching behavior in Al
    Maestro-Izquierdo M; Gonzalez MB; Jimenez-Molinos F; Moreno E; Roldan JB; Campabadal F
    Nanotechnology; 2020 Mar; 31(13):135202. PubMed ID: 31810070
    [TBL] [Abstract][Full Text] [Related]  

  • 34. Vertical MoS
    Xu R; Jang H; Lee MH; Amanov D; Cho Y; Kim H; Park S; Shin HJ; Ham D
    Nano Lett; 2019 Apr; 19(4):2411-2417. PubMed ID: 30896171
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Influence of Incorporated Pt-Fe2O3 Core-Shell Nanoparticles on the Resistive Switching Characteristics of ZnO Thin Film.
    Yoo EJ; Kang SY; Shim EL; Yoon TS; Kang CJ; Choi YJ
    J Nanosci Nanotechnol; 2015 Nov; 15(11):8622-6. PubMed ID: 26726563
    [TBL] [Abstract][Full Text] [Related]  

  • 36. Silica-sol-based spin-coating barrier layer against phosphorous diffusion for crystalline silicon solar cells.
    Uzum A; Fukatsu K; Kanda H; Kimura Y; Tanimoto K; Yoshinaga S; Jiang Y; Ishikawa Y; Uraoka Y; Ito S
    Nanoscale Res Lett; 2014; 9(1):659. PubMed ID: 25520602
    [TBL] [Abstract][Full Text] [Related]  

  • 37. Investigation of Switching Phenomenon in Metal-Tantalum Oxide Interface.
    Yawar A; Park MR; Hu Q; Song WJ; Yoon TS; Choi YJ; Kang CJ
    J Nanosci Nanotechnol; 2015 Oct; 15(10):7564-8. PubMed ID: 26726372
    [TBL] [Abstract][Full Text] [Related]  

  • 38. Bipolar Resistive Switching in Junctions of Gallium Oxide and p-type Silicon.
    Almadhoun MN; Speckbacher M; Olsen BC; Luber EJ; Sayed SY; Tornow M; Buriak JM
    Nano Lett; 2021 Mar; 21(6):2666-2674. PubMed ID: 33689381
    [TBL] [Abstract][Full Text] [Related]  

  • 39. Impact of device size and thickness of Al2O 3 film on the Cu pillar and resistive switching characteristics for 3D cross-point memory application.
    Panja R; Roy S; Jana D; Maikap S
    Nanoscale Res Lett; 2014 Dec; 9(1):2410. PubMed ID: 26088986
    [TBL] [Abstract][Full Text] [Related]  

  • 40. Amyloid-Gold Nanoparticle Hybrids for Biocompatible Memristive Devices.
    Han A; Zhang L; Zhang M; Liu C; Wu R; Wei Y; Dan R; Chen X; Hu E; Zhang Y; Tong Y; Liu L
    Materials (Basel); 2023 Feb; 16(5):. PubMed ID: 36902996
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 8.