199 related articles for article (PubMed ID: 31308418)
21. Solubility Limit of Ge Dopants in AlGaN: A Chemical and Microstructural Investigation Down to the Nanoscale.
Bougerol C; Robin E; Di Russo E; Bellet-Amalric E; Grenier V; Ajay A; Rigutti L; Monroy E
ACS Appl Mater Interfaces; 2021 Jan; 13(3):4165-4173. PubMed ID: 33449632
[TBL] [Abstract][Full Text] [Related]
22. AlGaN/AlN integrated photonics platform for the ultraviolet and visible spectral range.
Soltani M; Soref R; Palacios T; Englund D
Opt Express; 2016 Oct; 24(22):25415-25423. PubMed ID: 27828480
[TBL] [Abstract][Full Text] [Related]
23. The Heteroepitaxy of Thick
Zhang W; Zhang H; Zhang S; Wang Z; Liu L; Zhang Q; Hu X; Liang H
Materials (Basel); 2023 Mar; 16(7):. PubMed ID: 37049068
[TBL] [Abstract][Full Text] [Related]
24. Impact of Charge-Trapping Effects on Reliability Instability in Al
Amir W; Chakraborty S; Kwon HM; Kim TW
Materials (Basel); 2023 Jun; 16(12):. PubMed ID: 37374651
[TBL] [Abstract][Full Text] [Related]
25. Investigation of AlGaN/GaN Heterostructures Grown on Sputtered AlN Templates with Different Nucleation Layers.
Liu CY; Zhang YC; Xu SR; Jiang L; Zhang JC; Hao Y
Materials (Basel); 2019 Dec; 12(24):. PubMed ID: 31817364
[TBL] [Abstract][Full Text] [Related]
26. Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift.
Kuchuk AV; de Oliveira FM; Ghosh PK; Mazur YI; Stanchu HV; Teodoro MD; Ware ME; Salamo GJ
Nano Res; 2022; 15(3):2405-2412. PubMed ID: 34540143
[TBL] [Abstract][Full Text] [Related]
27. Nitrogen-Polar (000 1 ¯ ) GaN Grown on c-Plane Sapphire with a High-Temperature AlN Buffer.
Song J; Han J
Materials (Basel); 2017 Mar; 10(3):. PubMed ID: 28772612
[TBL] [Abstract][Full Text] [Related]
28. High-Quality GaN Epilayers Achieved by Facet-Controlled Epitaxial Lateral Overgrowth on Sputtered AlN/PSS Templates.
He C; Zhao W; Zhang K; He L; Wu H; Liu N; Zhang S; Liu X; Chen Z
ACS Appl Mater Interfaces; 2017 Dec; 9(49):43386-43392. PubMed ID: 29164860
[TBL] [Abstract][Full Text] [Related]
29. High quality AlN film assisted by graphene/sputtered AlN buffer layer for deep-ultraviolet-LED.
Wu H; Ning J; Zhang J; Zeng Y; Jia Y; Zhao J; Bai L; Wang Y; Li S; Wang D; Hao Y
Nanotechnology; 2023 May; 34(29):. PubMed ID: 37044083
[TBL] [Abstract][Full Text] [Related]
30. Epitaxial Growth of GaN on Magnetron Sputtered AlN/Hexagonal BN/Sapphire Substrates.
Wu J; Li P; Xu S; Zhou X; Tao H; Yue W; Wang Y; Wu J; Zhang Y; Hao Y
Materials (Basel); 2020 Nov; 13(22):. PubMed ID: 33202801
[TBL] [Abstract][Full Text] [Related]
31. Optical and Structural Properties of Aluminum Nitride Epi-Films at Room and High Temperature.
Yang Y; Liu Y; Wang L; Zhang S; Lu H; Peng Y; Wei W; Yang J; Feng ZC; Wan L; Klein B; Ferguson IT; Sun W
Materials (Basel); 2023 Nov; 16(23):. PubMed ID: 38068186
[TBL] [Abstract][Full Text] [Related]
32. Thickness-dependent phase transition of AlxGa1-xN thin films on strained GaN.
Cai D; Kang J
J Phys Chem B; 2006 Jun; 110(21):10396-400. PubMed ID: 16722745
[TBL] [Abstract][Full Text] [Related]
33. (Al, Ga)N-Based Quantum Dots Heterostructures on h-BN for UV-C Emission.
Zaiter A; Nikitskiy N; Nemoz M; Vuong P; Ottapilakkal V; Sundaram S; Ougazzaden A; Brault J
Nanomaterials (Basel); 2023 Aug; 13(17):. PubMed ID: 37686912
[TBL] [Abstract][Full Text] [Related]
34. Vertical GaN nanocolumns grown on graphene intermediated with a thin AlN buffer layer.
Liudi Mulyo A; Rajpalke MK; Kuroe H; Vullum PE; Weman H; Fimland BO; Kishino K
Nanotechnology; 2019 Jan; 30(1):015604. PubMed ID: 30375368
[TBL] [Abstract][Full Text] [Related]
35. Alloying enhanced negative Poisson's ratio in two-dimensional aluminum gallium nitride (Al
Wang X; Tang Z; Yu L; Wei D; Yuan Z; Tang C; Wang H; Ouyang T; Qin G
Phys Chem Chem Phys; 2024 Feb; 26(8):7010-7019. PubMed ID: 38345334
[TBL] [Abstract][Full Text] [Related]
36. Substrate effects on the strain relaxation in GaN/AlN short-period superlattices.
Kladko V; Kuchuk A; Lytvyn P; Yefanov O; Safriuk N; Belyaev A; Mazur YI; Decuir EA; Ware ME; Salamo GJ
Nanoscale Res Lett; 2012 Jun; 7(1):289. PubMed ID: 22672771
[TBL] [Abstract][Full Text] [Related]
37. Anisotropically biaxial strain in non-polar (112-0) plane In
Zhao G; Li H; Wang L; Meng Y; Ji Z; Li F; Wei H; Yang S; Wang Z
Sci Rep; 2017 Jul; 7(1):4497. PubMed ID: 28674408
[TBL] [Abstract][Full Text] [Related]
38. Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic In
Zscherp MF; Jentsch SA; Müller MJ; Lider V; Becker C; Chen L; Littmann M; Meier F; Beyer A; Hofmann DM; As DJ; Klar PJ; Volz K; Chatterjee S; Schörmann J
ACS Appl Mater Interfaces; 2023 Aug; 15(33):39513-39522. PubMed ID: 37530411
[TBL] [Abstract][Full Text] [Related]
39. Defect Structure Determination of GaN Films in GaN/AlN/Si Heterostructures by HR-TEM, XRD, and Slow Positrons Experiments.
Ene VL; Dinescu D; Djourelov N; Zai I; Vasile BS; Serban AB; Leca V; Andronescu E
Nanomaterials (Basel); 2020 Jan; 10(2):. PubMed ID: 31979247
[TBL] [Abstract][Full Text] [Related]
40. Studies of Defect Structure in Epitaxial AlN/GaN Films Grown on (111) 3C-SiC.
Serban AB; Ene VL; Dinescu D; Zai I; Djourelov N; Vasile BS; Leca V
Nanomaterials (Basel); 2021 May; 11(5):. PubMed ID: 34069169
[TBL] [Abstract][Full Text] [Related]
[Previous] [Next] [New Search]