These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

152 related articles for article (PubMed ID: 31357496)

  • 1. A Multi-Method Simulation Toolbox to Study Performance and Variability of Nanowire FETs.
    Seoane N; Nagy D; Indalecio G; Espiñeira G; Kalna K; García-Loureiro A
    Materials (Basel); 2019 Jul; 12(15):. PubMed ID: 31357496
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Variability Predictions for the Next Technology Generations of
    Lee J; Badami O; Carrillo-Nuñez H; Berrada S; Medina-Bailon C; Dutta T; Adamu-Lema F; Georgiev VP; Asenov A
    Micromachines (Basel); 2018 Dec; 9(12):. PubMed ID: 30563045
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Tellurium Nanowire Gate-All-Around MOSFETs for Sub-5 nm Applications.
    Yin Y; Zhang Z; Zhong H; Shao C; Wan X; Zhang C; Robertson J; Guo Y
    ACS Appl Mater Interfaces; 2021 Jan; 13(2):3387-3396. PubMed ID: 33404208
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Sub-kT/q switching in In
    Su M; Zou X; Gong Y; Wang J; Liu Y; Ho JC; Liu X; Liao L
    Nanoscale; 2018 Oct; 10(40):19131-19139. PubMed ID: 30298891
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Design and Optimization of Germanium-Based Gate-Metal-Core Vertical Nanowire Tunnel FET.
    Jang WD; Yoon YJ; Cho MS; Jung JH; Lee SH; Jang J; Bae JH; Kang IM
    Micromachines (Basel); 2019 Oct; 10(11):. PubMed ID: 31683726
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Electrical characteristic fluctuation of 16-nm-gate high-κ/metal gate bulk FinFET devices in the presence of random interface traps.
    Hsu SC; Li Y
    Nanoscale Res Lett; 2014; 9(1):633. PubMed ID: 25520590
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Ge
    Kang Y; Xu S; Han K; Kong EY; Song Z; Luo S; Kumar A; Wang C; Fan W; Liang G; Gong X
    Nano Lett; 2021 Jul; 21(13):5555-5563. PubMed ID: 34105972
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Sensing with Advanced Computing Technology: Fin Field-Effect Transistors with High-k Gate Stack on Bulk Silicon.
    Rigante S; Scarbolo P; Wipf M; Stoop RL; Bedner K; Buitrago E; Bazigos A; Bouvet D; Calame M; Schönenberger C; Ionescu AM
    ACS Nano; 2015 May; 9(5):4872-81. PubMed ID: 25817336
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Can Carbon Nanotube Transistors Be Scaled Down to the Sub-5 nm Gate Length?
    Xu L; Yang J; Qiu C; Liu S; Zhou W; Li Q; Shi B; Ma J; Yang C; Lu J; Zhang Z
    ACS Appl Mater Interfaces; 2021 Jul; 13(27):31957-31967. PubMed ID: 34210135
    [TBL] [Abstract][Full Text] [Related]  

  • 10. A Feasible Alternative to FDSOI and FinFET: Optimization of W/La
    Mah SK; Ker PJ; Ahmad I; Zainul Abidin NF; Ali Gamel MM
    Materials (Basel); 2021 Sep; 14(19):. PubMed ID: 34640118
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Electrical properties of 10-nm-radius n-type gate all around twin Si nanowire field effect transistors.
    Jang SH; Ryu JT; You JH; Kim TW
    J Nanosci Nanotechnol; 2012 Jul; 12(7):5839-42. PubMed ID: 22966666
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Characteristic Fluctuations of Dynamic Power Delay Induced by Random Nanosized Titanium Nitride Grains and the Aspect Ratio Effect of Gate-All-Around Nanowire CMOS Devices and Circuits.
    Li Y; Chen CY; Chuang MH; Chao PJ
    Materials (Basel); 2019 May; 12(9):. PubMed ID: 31071936
    [TBL] [Abstract][Full Text] [Related]  

  • 13. High performance horizontal gate-all-around silicon nanowire field-effect transistors.
    Shirak O; Shtempluck O; Kotchtakov V; Bahir G; Yaish YE
    Nanotechnology; 2012 Oct; 23(39):395202. PubMed ID: 22971804
    [TBL] [Abstract][Full Text] [Related]  

  • 14. p-GaAs Nanowire Metal-Semiconductor Field-Effect Transistors with Near-Thermal Limit Gating.
    Ullah AR; Meyer F; Gluschke JG; Naureen S; Caroff P; Krogstrup P; Nygård J; Micolich AP
    Nano Lett; 2018 Sep; 18(9):5673-5680. PubMed ID: 30134098
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Vertical Ge/Si Core/Shell Nanowire Junctionless Transistor.
    Chen L; Cai F; Otuonye U; Lu WD
    Nano Lett; 2016 Jan; 16(1):420-6. PubMed ID: 26674542
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Solution processable multi-channel ZnO nanowire field-effect transistors with organic gate dielectric.
    Opoku C; Hoettges KF; Hughes MP; Stolojan V; Silva SR; Shkunov M
    Nanotechnology; 2013 Oct; 24(40):405203. PubMed ID: 24029562
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Performance of AlGaN/GaN Nanowire Omega-Shaped-Gate Fin-Shaped Field-Effect Transistor.
    Lee DG; Sindhuri V; Jo YW; Son DH; Kang HS; Lee JH; Lee JH; Cristoloveanu S; Im KS; Lee JH
    J Nanosci Nanotechnol; 2016 May; 16(5):5049-52. PubMed ID: 27483869
    [TBL] [Abstract][Full Text] [Related]  

  • 18. 3D modeling of dual-gate FinFET.
    Mil'shtein S; Devarakonda L; Zanchi B; Palma J
    Nanoscale Res Lett; 2012 Nov; 7(1):625. PubMed ID: 23148493
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Electrical characteristic fluctuation of 16-nm-gate trapezoidal bulk FinFET devices with fixed top-fin width induced by random discrete dopants.
    Huang WT; Li Y
    Nanoscale Res Lett; 2015; 10():116. PubMed ID: 25897299
    [TBL] [Abstract][Full Text] [Related]  

  • 20. A Simulation Study of a Gate-All-Around Nanowire Transistor with a Core-Insulator.
    Zhang Y; Han K; Li AJ
    Micromachines (Basel); 2020 Feb; 11(2):. PubMed ID: 32098218
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 8.