These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

90 related articles for article (PubMed ID: 31375022)

  • 1. Evolution of Scintillation and Electrical Characteristics of AlGaN Double-Response Sensors During Proton Irradiation.
    Ceponis T; Badokas K; Deveikis L; Pavlov J; Rumbauskas V; Kovalevskij V; Stanionyte S; Tamulaitis G; Gaubas E
    Sensors (Basel); 2019 Aug; 19(15):. PubMed ID: 31375022
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Radiation damage resistance of AlGaN detectors for applications in the extreme-ultraviolet spectral range.
    Barkusky F; Peth C; Bayer A; Mann K; John J; Malinowski PE
    Rev Sci Instrum; 2009 Sep; 80(9):093102. PubMed ID: 19791927
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Thermal Properties of Schottky Barrier Diode on AlGaN/GaN Heterostructures on Chemical Vapor Deposition Diamond.
    Kim ZS; Lee HS; Bae SB; Nam E; Lim JW
    J Nanosci Nanotechnol; 2019 Oct; 19(10):6119-6122. PubMed ID: 31026919
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale.
    Fisichella G; Greco G; Roccaforte F; Giannazzo F
    Nanoscale; 2014 Aug; 6(15):8671-80. PubMed ID: 24946753
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Role of Vacancy Defects in Reducing the Responsivity of AlGaN Schottky Barrier Ultraviolet Detectors.
    Huang Y; Yang J; Zhao D; Zhang Y; Liu Z; Liang F; Chen P
    Nanomaterials (Basel); 2022 Sep; 12(18):. PubMed ID: 36144936
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Effects of Proton Irradiation on the Current Characteristics of SiN-Passivated AlGaN/GaN MIS-HEMTs Using a TMAH-Based Surface Pre-Treatment.
    Yoon YJ; Lee JS; Suk JK; Kang IM; Lee JH; Lee EJ; Kim DS
    Micromachines (Basel); 2021 Jul; 12(8):. PubMed ID: 34442485
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Nanoscale electrical and structural modification induced by rapid thermal oxidation of AlGaN/GaN heterostructures.
    Greco G; Fiorenza P; Giannazzo F; Alberti A; Roccaforte F
    Nanotechnology; 2014 Jan; 25(2):025201. PubMed ID: 24334374
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs.
    Chang TH; Xiong K; Park SH; Yuan G; Ma Z; Han J
    Sci Rep; 2017 Jul; 7(1):6360. PubMed ID: 28743988
    [TBL] [Abstract][Full Text] [Related]  

  • 9. High-Performance Schottky Diode Gas Sensor Based on the Heterojunction of Three-Dimensional Nanohybrids of Reduced Graphene Oxide-Vertical ZnO Nanorods on an AlGaN/GaN Layer.
    Minh Triet N; Thai Duy L; Hwang BU; Hanif A; Siddiqui S; Park KH; Cho CY; Lee NE
    ACS Appl Mater Interfaces; 2017 Sep; 9(36):30722-30732. PubMed ID: 28825301
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Pulsed photo-ionization spectroscopy of traps in as-grown and neutron irradiated ammonothermally synthesized GaN.
    Gaubas E; Čeponis T; Meškauskaite D; Mickevičius J; Pavlov J; Rumbauskas V; Grigonis R; Zajac M; Kucharski R
    Sci Rep; 2019 Feb; 9(1):1473. PubMed ID: 30728431
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Quantified hole concentration in AlGaN nanowires for high-performance ultraviolet emitters.
    Zhao C; Ebaid M; Zhang H; Priante D; Janjua B; Zhang D; Wei N; Alhamoud AA; Shakfa MK; Ng TK; Ooi BS
    Nanoscale; 2018 Aug; 10(34):15980-15988. PubMed ID: 29897082
    [TBL] [Abstract][Full Text] [Related]  

  • 12. AlGaN nano-shell structure on a GaN nanorod formed with the pulsed MOCVD growth.
    Tu CG; Zhang X; Chou KP; Tse WF; Hsu YC; Chen YP; Kiang YW; Yang CCC
    Nanotechnology; 2019 Jul; 30(27):275201. PubMed ID: 30901764
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Vertical GaN-on-GaN Schottky Diodes as α-Particle Radiation Sensors.
    Sandupatla A; Arulkumaran S; Ing NG; Nitta S; Kennedy J; Amano H
    Micromachines (Basel); 2020 May; 11(5):. PubMed ID: 32443764
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors.
    Keum D; Kim H
    Micromachines (Basel); 2019 Oct; 10(11):. PubMed ID: 31717725
    [TBL] [Abstract][Full Text] [Related]  

  • 15. a-Axis GaN/AlN/AlGaN Core-Shell Heterojunction Microwires as Normally Off High Electron Mobility Transistors.
    Song W; Wang R; Wang X; Guo D; Chen H; Zhu Y; Liu L; Zhou Y; Sun Q; Wang L; Li S
    ACS Appl Mater Interfaces; 2017 Nov; 9(47):41435-41442. PubMed ID: 29111660
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires.
    Song E; Li Q; Swartzentruber B; Pan W; Wang GT; Martinez JA
    Nanotechnology; 2016 Jan; 27(1):015204. PubMed ID: 26606258
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Optical investigation of band-edge structure and built-in electric field of AlGaN/GaN heterostructures by means of thermoreflectance, photoluminescence, and contactless electroreflectance spectroscopy.
    Ho CH; Lee JW
    Opt Lett; 2009 Dec; 34(23):3604-6. PubMed ID: 19953134
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Enhanced spectral response of an AlGaN-based solar-blind ultraviolet photodetector with Al nanoparticles.
    Bao G; Li D; Sun X; Jiang M; Li Z; Song H; Jiang H; Chen Y; Miao G; Zhang Z
    Opt Express; 2014 Oct; 22(20):24286-93. PubMed ID: 25322003
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes.
    Hu H; Zhou S; Liu X; Gao Y; Gui C; Liu S
    Sci Rep; 2017 Mar; 7():44627. PubMed ID: 28294166
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Spectral response characteristics of the transmission-mode aluminum gallium nitride photocathode with varying aluminum composition.
    Hao G; Liu J; Ke S
    Appl Opt; 2017 Dec; 56(35):9757-9761. PubMed ID: 29240122
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 5.