These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

295 related articles for article (PubMed ID: 31383163)

  • 21. Room-Temperature Fabrication of High-Performance Amorphous In-Ga-Zn-O/Al
    Ning H; Zeng Y; Kuang Y; Zheng Z; Zhou P; Yao R; Zhang H; Bao W; Chen G; Fang Z; Peng J
    ACS Appl Mater Interfaces; 2017 Aug; 9(33):27792-27800. PubMed ID: 28767216
    [TBL] [Abstract][Full Text] [Related]  

  • 22. Improved Electrical Performance of SiO₂-Doped Indium Zinc Oxide Thin-Film Transistor.
    Lim Y; Hwang N; Lee J; Lee S; Yi M
    J Nanosci Nanotechnol; 2019 Mar; 19(3):1470-1473. PubMed ID: 30469207
    [TBL] [Abstract][Full Text] [Related]  

  • 23. Effect of Annealing Temperature on Electrical Properties of ZTO Thin-Film Transistors.
    Wang C; Guo L; Lei M; Wang C; Chu X; Yang F; Gao X; Wamg H; Chi Y; Yang X
    Nanomaterials (Basel); 2022 Jul; 12(14):. PubMed ID: 35889620
    [TBL] [Abstract][Full Text] [Related]  

  • 24. Effect of channel layer thickness on the performance of indium-zinc-tin oxide thin film transistors manufactured by inkjet printing.
    Avis C; Hwang HR; Jang J
    ACS Appl Mater Interfaces; 2014 Jul; 6(14):10941-5. PubMed ID: 24877653
    [TBL] [Abstract][Full Text] [Related]  

  • 25. Effects of annealing temperature on properties of InSnZnO thin film transistors prepared by Co-sputtering.
    Zhong W; Li G; Lan L; Li B; Chen R
    RSC Adv; 2018 Oct; 8(61):34817-34822. PubMed ID: 35547050
    [TBL] [Abstract][Full Text] [Related]  

  • 26. The Effect of Microwave Annealing of Reliability Characteristics on Amorphous IGZO Thin Film Transistors.
    Wu CH; Chang KM; Chen YM; Zhang YX; Cheng CY
    J Nanosci Nanotechnol; 2019 Apr; 19(4):2189-2192. PubMed ID: 30486965
    [TBL] [Abstract][Full Text] [Related]  

  • 27. Hydrogen-Doping-Enabled Boosting of the Carrier Mobility and Stability in Amorphous IGZTO Transistors.
    Lee J; Choi CH; Kim T; Hur J; Kim MJ; Kim EH; Lim JH; Kang Y; Jeong JK
    ACS Appl Mater Interfaces; 2022 Dec; 14(51):57016-57027. PubMed ID: 36511797
    [TBL] [Abstract][Full Text] [Related]  

  • 28. Atomic Layer Deposition of Ternary Indium/Tin/Aluminum Oxide Thin Films, Their Characterization and Transistor Performance under Illumination.
    Büschges MI; Hoffmann RC; Regoutz A; Schlueter C; Schneider JJ
    Chemistry; 2021 Jul; 27(38):9791-9800. PubMed ID: 34002896
    [TBL] [Abstract][Full Text] [Related]  

  • 29. Boosting Modulation of Oxide Semiconductors via Voltage-Based Ambi-Ionic Migration.
    Lee H; Jung TS; Park JW; Kim HJ
    ACS Appl Mater Interfaces; 2018 Oct; 10(43):37216-37222. PubMed ID: 30298732
    [TBL] [Abstract][Full Text] [Related]  

  • 30. Fabrication and Characteristics of High Mobility InSnZnO Thin Film Transistors.
    Choi P; Lee J; Park H; Baek D; Lee J; Yi J; Kim S; Choi B
    J Nanosci Nanotechnol; 2016 May; 16(5):4788-91. PubMed ID: 27483823
    [TBL] [Abstract][Full Text] [Related]  

  • 31. Optimization of the Solution-Based Indium-Zinc Oxide/Zinc-Tin Oxide Channel Layer for Thin-Film Transistors.
    Lim K; Choi P; Kim S; Kim H; Kim M; Lee J; Hyeon Y; Koo K; Choi B
    J Nanosci Nanotechnol; 2018 Sep; 18(9):5913-5918. PubMed ID: 29677716
    [TBL] [Abstract][Full Text] [Related]  

  • 32. Fabrication of Zinc Oxide-Based Thin-Film Transistors by Radio Frequency Sputtering for Ultraviolet Sensing Applications.
    Hsu MH; Chang SP; Chang SJ; Li CW; Li JY; Lin CC
    J Nanosci Nanotechnol; 2018 May; 18(5):3518-3522. PubMed ID: 29442860
    [TBL] [Abstract][Full Text] [Related]  

  • 33. Effect of the annealing ambient on the electrical characteristics of the amorphous InGaZnO thin film transistors.
    Huang YC; Yang PY; Huang HY; Wang SJ; Cheng HC
    J Nanosci Nanotechnol; 2012 Jul; 12(7):5625-30. PubMed ID: 22966622
    [TBL] [Abstract][Full Text] [Related]  

  • 34. Performance Enhancement of Channel-Engineered Al-Zn-Sn-O Thin-Film Transistors with Highly Conductive In-Ga-Zn-O Buried Layer via Vacuum Rapid Thermal Annealing.
    Kim SH; Cho WJ
    J Nanosci Nanotechnol; 2020 Aug; 20(8):4671-4677. PubMed ID: 32126639
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Rational Design of ZnO:H/ZnO Bilayer Structure for High-Performance Thin-Film Transistors.
    Abliz A; Huang CW; Wang J; Xu L; Liao L; Xiao X; Wu WW; Fan Z; Jiang C; Li J; Guo S; Liu C; Guo T
    ACS Appl Mater Interfaces; 2016 Mar; 8(12):7862-8. PubMed ID: 26977526
    [TBL] [Abstract][Full Text] [Related]  

  • 36. Electrical Performance and Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors with Buried-Channel Layers.
    Zhang Y; Xie H; Dong C
    Micromachines (Basel); 2019 Nov; 10(11):. PubMed ID: 31739504
    [TBL] [Abstract][Full Text] [Related]  

  • 37. Oxygen Partial Pressure Impact on Characteristics of Indium Titanium Zinc Oxide Thin Film Transistor Fabricated via RF Sputtering.
    Hsu MH; Chang SP; Chang SJ; Wu WT; Li JY
    Nanomaterials (Basel); 2017 Jun; 7(7):. PubMed ID: 28672868
    [TBL] [Abstract][Full Text] [Related]  

  • 38. Damage-free back channel wet-etch process in amorphous indium-zinc-oxide thin-film transistors using a carbon-nanofilm barrier layer.
    Luo D; Zhao M; Xu M; Li M; Chen Z; Wang L; Zou J; Tao H; Wang L; Peng J
    ACS Appl Mater Interfaces; 2014 Jul; 6(14):11318-25. PubMed ID: 24969359
    [TBL] [Abstract][Full Text] [Related]  

  • 39. Electrical performance of La-doped In
    Du H; Tuokedaerhan K; Zhang R
    RSC Adv; 2024 May; 14(22):15483-15490. PubMed ID: 38807708
    [TBL] [Abstract][Full Text] [Related]  

  • 40. Improving the electrical properties of transparent ZnO-based thin- film transistors using MgO gate dielectric with various oxygen concentrations.
    Hwang JD; Hsu ZR
    Nanotechnology; 2023 Nov; 35(4):. PubMed ID: 37669648
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 15.