These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
138 related articles for article (PubMed ID: 31383180)
21. Toward an Improved Understanding of the Role of Dielectrics in Capacitors. Phillips J Materials (Basel); 2018 Aug; 11(9):. PubMed ID: 30149539 [TBL] [Abstract][Full Text] [Related]
22. Voltage-dependent fabrication of nanoporous alumina and the applications to nanocapacitors. Lee JT; Parida B; Choi J; Kim K J Nanosci Nanotechnol; 2011 Jul; 11(7):6389-94. PubMed ID: 22121721 [TBL] [Abstract][Full Text] [Related]
23. Plasma processing for crystallization and densification of atomic layer deposition BaTiO3 thin films. An J; Usui T; Logar M; Park J; Thian D; Kim S; Kim K; Prinz FB ACS Appl Mater Interfaces; 2014 Jul; 6(13):10656-60. PubMed ID: 24946008 [TBL] [Abstract][Full Text] [Related]
24. Effects of Microwave Annealing on High- Kang MS; Cho WJ J Nanosci Nanotechnol; 2019 Oct; 19(10):6232-6238. PubMed ID: 31026942 [TBL] [Abstract][Full Text] [Related]
25. The Optimization of Spacer Engineering for Capacitor-Less DRAM Based on the Dual-Gate Tunneling Transistor. Li W; Liu H; Wang S; Chen S; Wang Q Nanoscale Res Lett; 2018 Mar; 13(1):73. PubMed ID: 29508093 [TBL] [Abstract][Full Text] [Related]
26. Demonstration of TiO₂ Based Ultra High- Kang B; Choi KK; An J; Baek RH J Nanosci Nanotechnol; 2021 Aug; 21(8):4394-4399. PubMed ID: 33714333 [TBL] [Abstract][Full Text] [Related]
27. A coaxial film capacitor with a novel structure to enhance its flashover performance. Chen ZQ; Ji SC; Jia W; Zhu XQ; Liang TX; Guo F; He XP; Wu W Rev Sci Instrum; 2019 Dec; 90(12):124709. PubMed ID: 31893787 [TBL] [Abstract][Full Text] [Related]
28. Charge conduction and breakdown mechanisms in self-assembled nanodielectrics. DiBenedetto SA; Facchetti A; Ratner MA; Marks TJ J Am Chem Soc; 2009 May; 131(20):7158-68. PubMed ID: 19408943 [TBL] [Abstract][Full Text] [Related]
29. Coulomb barrier creation by means of electronic field emission in nanolayer capacitors. Ilin E; Burkova I; Draher T; Colla EV; Hübler A; Bezryadin A Nanoscale; 2020 Sep; 12(36):18761-18770. PubMed ID: 32970086 [TBL] [Abstract][Full Text] [Related]
30. Improved reliability from a plasma-assisted metal-insulator-metal capacitor comprising a high-k HfO2 film on a flexible polyimide substrate. Meena JS; Chu MC; Kuo SW; Chang FC; Ko FH Phys Chem Chem Phys; 2010 Mar; 12(11):2582-9. PubMed ID: 20200734 [TBL] [Abstract][Full Text] [Related]
31. Schottky barrier memory based on heterojunction bandgap engineering for high-density and low-power retention. Kim H; Kim Y; Oh K; Park JH; Baek CK Discov Nano; 2024 Oct; 19(1):168. PubMed ID: 39375234 [TBL] [Abstract][Full Text] [Related]
32. Experimental Formation and Mechanism Study for Super-High Dielectric Constant AlO Liu J; Okamura M; Mashiko H; Imura M; Liao M; Kikuchi R; Suzuka M; Koide Y Nanomaterials (Basel); 2023 Apr; 13(7):. PubMed ID: 37049349 [TBL] [Abstract][Full Text] [Related]
33. Thin-film composite materials as a dielectric layer for flexible metal-insulator-metal capacitors. Tiwari JN; Meena JS; Wu CS; Tiwari RN; Chu MC; Chang FC; Ko FH ChemSusChem; 2010 Sep; 3(9):1051-6. PubMed ID: 20623577 [TBL] [Abstract][Full Text] [Related]
34. Investigation of embedded perovskite nanoparticles for enhanced capacitor permittivities. Krause A; Weber WM; Pohl D; Rellinghaus B; Verheijen M; Mikolajick T ACS Appl Mater Interfaces; 2014 Nov; 6(22):19737-43. PubMed ID: 25330400 [TBL] [Abstract][Full Text] [Related]
35. Morphotropic Phase Boundary of Hf Park MH; Lee YH; Kim HJ; Kim YJ; Moon T; Kim KD; Hyun SD; Hwang CS ACS Appl Mater Interfaces; 2018 Dec; 10(49):42666-42673. PubMed ID: 30468068 [TBL] [Abstract][Full Text] [Related]
36. The Programming Optimization of Capacitorless 1T DRAM Based on the Dual-Gate TFET. Li W; Liu H; Wang S; Chen S; Wang Q Nanoscale Res Lett; 2017 Sep; 12(1):524. PubMed ID: 28875269 [TBL] [Abstract][Full Text] [Related]
37. Capacitorless 1T-DRAM on crystallized poly-Si TFT. Kim MS; Cho WJ J Nanosci Nanotechnol; 2011 Jul; 11(7):5608-11. PubMed ID: 22121578 [TBL] [Abstract][Full Text] [Related]
38. Effects of La Incorporation in Hf Based Dielectric on Leakage Conduction and Carrier Scattering Mechanisms. You SW; Lee DH; Nguyen MC; Jeon YS; Tong DT; Bang HJ; Jeong JK; Choi R J Nanosci Nanotechnol; 2015 Oct; 15(10):7590-2. PubMed ID: 26726378 [TBL] [Abstract][Full Text] [Related]
39. Analysis of the Sensing Margin of Silicon and Poly-Si 1T-DRAM. Kim H; Yoo S; Kang IM; Cho S; Sun W; Shin H Micromachines (Basel); 2020 Feb; 11(2):. PubMed ID: 32102235 [TBL] [Abstract][Full Text] [Related]
40. An in-memory computing architecture based on two-dimensional semiconductors for multiply-accumulate operations. Wang Y; Tang H; Xie Y; Chen X; Ma S; Sun Z; Sun Q; Chen L; Zhu H; Wan J; Xu Z; Zhang DW; Zhou P; Bao W Nat Commun; 2021 Jun; 12(1):3347. PubMed ID: 34099710 [TBL] [Abstract][Full Text] [Related] [Previous] [Next] [New Search]