These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

252 related articles for article (PubMed ID: 31385709)

  • 21. Deep Ultraviolet Luminescence Due to Extreme Confinement in Monolayer GaN/Al(Ga)N Nanowire and Planar Heterostructures.
    Aiello A; Wu Y; Pandey A; Wang P; Lee W; Bayerl D; Sanders N; Deng Z; Gim J; Sun K; Hovden R; Kioupakis E; Mi Z; Bhattacharya P
    Nano Lett; 2019 Nov; 19(11):7852-7858. PubMed ID: 31573819
    [TBL] [Abstract][Full Text] [Related]  

  • 22. Optical properties of GaN-based nanowires containing a single Al(0.14)Ga(0.86)N/GaN quantum disc.
    Jacopin G; Rigutti L; Teubert J; Julien FH; Furtmayr F; Komninou P; Kehagias T; Eickhoff M; Tchernycheva M
    Nanotechnology; 2013 Mar; 24(12):125201. PubMed ID: 23459100
    [TBL] [Abstract][Full Text] [Related]  

  • 23. Coaxial In(x)Ga(1-x)N/GaN multiple quantum well nanowire arrays on Si(111) substrate for high-performance light-emitting diodes.
    Ra YH; Navamathavan R; Park JH; Lee CR
    Nano Lett; 2013 Aug; 13(8):3506-16. PubMed ID: 23701263
    [TBL] [Abstract][Full Text] [Related]  

  • 24. AlGaN Nanowires for Ultraviolet Light-Emitting: Recent Progress, Challenges, and Prospects.
    Zhao S; Lu J; Hai X; Yin X
    Micromachines (Basel); 2020 Jan; 11(2):. PubMed ID: 31979274
    [TBL] [Abstract][Full Text] [Related]  

  • 25. Crystal Growth and Characterization of n-GaN in a Multiple Quantum Shell Nanowire-Based Light Emitter with a Tunnel Junction.
    Miyamoto Y; Lu W; Sone N; Okuda R; Ito K; Okuno K; Mizutani K; Iida K; Ohya M; Iwaya M; Takeuchi T; Kamiyama S; Akasaki I
    ACS Appl Mater Interfaces; 2021 Aug; 13(31):37883-37892. PubMed ID: 34313418
    [TBL] [Abstract][Full Text] [Related]  

  • 26. Quantum confined Stark effect of InGaN/GaN multi-quantum disks grown on top of GaN nanorods.
    Park YS; Holmes MJ; Kang TW; Taylor RA
    Nanotechnology; 2010 Mar; 21(11):115401. PubMed ID: 20173227
    [TBL] [Abstract][Full Text] [Related]  

  • 27. Strain Driven Shape Evolution of Stacked (In,Ga)N Quantum Disks Embedded in GaN Nanowires.
    Bartolomé J; Hanke M; van Treeck D; Trampert A
    Nano Lett; 2017 Aug; 17(8):4654-4660. PubMed ID: 28735548
    [TBL] [Abstract][Full Text] [Related]  

  • 28. Spontaneous nucleation and growth of GaN nanowires: the fundamental role of crystal polarity.
    Fernández-Garrido S; Kong X; Gotschke T; Calarco R; Geelhaar L; Trampert A; Brandt O
    Nano Lett; 2012 Dec; 12(12):6119-25. PubMed ID: 23130785
    [TBL] [Abstract][Full Text] [Related]  

  • 29. UV LEDs based on p-i-n core-shell AlGaN/GaN nanowire heterostructures grown by N-polar selective area epitaxy.
    Brubaker MD; Genter KL; Roshko A; Blanchard PT; Spann BT; Harvey TE; Bertness KA
    Nanotechnology; 2019 Jun; 30(23):234001. PubMed ID: 30776789
    [TBL] [Abstract][Full Text] [Related]  

  • 30. 2D-GaN/AlN Multiple Quantum Disks/Quantum Well Heterostructures for High-Power Electron-Beam Pumped UVC Emitters.
    Jmerik V; Nechaev D; Semenov A; Evropeitsev E; Shubina T; Toropov A; Yagovkina M; Alekseev P; Borodin B; Orekhova K; Kozlovsky V; Zverev M; Gamov N; Wang T; Wang X; Pristovsek M; Amano H; Ivanov S
    Nanomaterials (Basel); 2023 Mar; 13(6):. PubMed ID: 36985973
    [TBL] [Abstract][Full Text] [Related]  

  • 31. Photoluminescence polarization in strained GaN/AlGaN core/shell nanowires.
    Jacopin G; Rigutti L; Bellei S; Lavenus P; Julien FH; Davydov AV; Tsvetkov D; Bertness KA; Sanford NA; Schlager JB; Tchernycheva M
    Nanotechnology; 2012 Aug; 23(32):325701. PubMed ID: 22802219
    [TBL] [Abstract][Full Text] [Related]  

  • 32. Studies on Carrier Recombination in GaN/AlN Quantum Dots in Nanowires with a Core-Shell Structure.
    Deng J; Hao Z; Wang L; Yu J; Wang J; Sun C; Han Y; Xiong B; Li H; Zhao W; Liang X; Wang J; Luo Y
    Nanomaterials (Basel); 2020 Nov; 10(11):. PubMed ID: 33233685
    [TBL] [Abstract][Full Text] [Related]  

  • 33. Monodisperse (In, Ga)N insertions in catalyst-free-grown GaN(0001) nanowires.
    Knelangen M; Hanke M; Luna E; Schrottke L; Brandt O; Trampert A
    Nanotechnology; 2011 Sep; 22(36):365703. PubMed ID: 21836335
    [TBL] [Abstract][Full Text] [Related]  

  • 34. InGaN/GaN nanowires grown on SiO(2) and light emitting diodes with low turn on voltages.
    Park Y; Jahangir S; Park Y; Bhattacharya P; Heo J
    Opt Express; 2015 Jun; 23(11):A650-6. PubMed ID: 26072889
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Core-Shell Nanorods as Ultraviolet Light-Emitting Diodes.
    Cameron D; Coulon PM; Fairclough S; Kusch G; Edwards PR; Susilo N; Wernicke T; Kneissl M; Oliver RA; Shields PA; Martin RW
    Nano Lett; 2023 Feb; 23(4):1451-1458. PubMed ID: 36748796
    [TBL] [Abstract][Full Text] [Related]  

  • 36. Probing the internal electric field in GaN/AlGaN nanowire heterostructures.
    Müssener J; Teubert J; Hille P; Schäfer M; Schörmann J; de la Mata M; Arbiol J; Eickhoff M
    Nano Lett; 2014 Sep; 14(9):5118-22. PubMed ID: 25115566
    [TBL] [Abstract][Full Text] [Related]  

  • 37. Polarity-Induced Selective Area Epitaxy of GaN Nanowires.
    de Souza Schiaber Z; Calabrese G; Kong X; Trampert A; Jenichen B; Dias da Silva JH; Geelhaar L; Brandt O; Fernández-Garrido S
    Nano Lett; 2017 Jan; 17(1):63-70. PubMed ID: 28073259
    [TBL] [Abstract][Full Text] [Related]  

  • 38. Geometrical Selection of GaN Nanowires Grown by Plasma-Assisted MBE on Polycrystalline ZrN Layers.
    Olszewski K; Sobanska M; Dubrovskii VG; Leshchenko ED; Wierzbicka A; Zytkiewicz ZR
    Nanomaterials (Basel); 2023 Sep; 13(18):. PubMed ID: 37764616
    [TBL] [Abstract][Full Text] [Related]  

  • 39. Core-shell InGaN/GaN nanowire light emitting diodes analyzed by electron beam induced current microscopy and cathodoluminescence mapping.
    Tchernycheva M; Neplokh V; Zhang H; Lavenus P; Rigutti L; Bayle F; Julien FH; Babichev A; Jacopin G; Largeau L; Ciechonski R; Vescovi G; Kryliouk O
    Nanoscale; 2015 Jul; 7(27):11692-701. PubMed ID: 26100114
    [TBL] [Abstract][Full Text] [Related]  

  • 40. Selective area formation of GaN nanowires on GaN substrates by the use of amorphous Al
    Sobanska M; Zytkiewicz ZR; Klosek K; Kruszka R; Golaszewska K; Ekielski M; Gieraltowska S
    Nanotechnology; 2020 May; 31(18):184001. PubMed ID: 31940593
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 13.