199 related articles for article (PubMed ID: 31406149)
1. Interplay of strain and intermixing effects on direct-bandgap optical transition in strained Ge-on-Si under thermal annealing.
Lee C; Yoo YS; Ki B; Jang MH; Lim SH; Song HG; Cho JH; Oh J; Cho YH
Sci Rep; 2019 Aug; 9(1):11709. PubMed ID: 31406149
[TBL] [Abstract][Full Text] [Related]
2. The Effects of Annealing Temperatures on Composition and Strain in Si
Abidin MSZ; Morshed T; Chikita H; Kinoshita Y; Muta S; Anisuzzaman M; Park JH; Matsumura R; Mahmood MR; Sadoh T; Hashim AM
Materials (Basel); 2014 Feb; 7(2):1409-1421. PubMed ID: 28788521
[TBL] [Abstract][Full Text] [Related]
3. Impact of annealing on surface morphology and photoluminescence of self-assembled Ge and Si quantum dots.
Samavati A; Othaman Z; Dabagh S; Ghoshal SK
J Nanosci Nanotechnol; 2014 Jul; 14(7):5266-71. PubMed ID: 24758014
[TBL] [Abstract][Full Text] [Related]
4. Crystallization of Electrodeposited Germanium Thin Film on Silicon (100).
Abidin MSZ; Matsumura R; Anisuzzaman M; Park JH; Muta S; Mahmood MR; Sadoh T; Hashim AM
Materials (Basel); 2013 Nov; 6(11):5047-5057. PubMed ID: 28788375
[TBL] [Abstract][Full Text] [Related]
5. Thermally Induced Tensile Strain of Epitaxial Ge Layers Grown by a Two-Step e-Beam Evaporation Process on Si Substrates.
Ki B; Kim KH; Kim H; Lee C; Cho YH; Oh J
J Nanosci Nanotechnol; 2016 May; 16(5):5239-42. PubMed ID: 27483906
[TBL] [Abstract][Full Text] [Related]
6. Heterogeneously-Grown Tunable Tensile Strained Germanium on Silicon for Photonic Devices.
Clavel M; Saladukha D; Goley PS; Ochalski TJ; Murphy-Armando F; Bodnar RJ; Hudait MK
ACS Appl Mater Interfaces; 2015 Dec; 7(48):26470-81. PubMed ID: 26561963
[TBL] [Abstract][Full Text] [Related]
7. Strong enhancement of direct transition photoluminescence at room temperature for highly tensile-strained Ge decorated using 5 nm gold nanoparticles.
Dushaq G; Paredes B; Rasras M
Nanotechnology; 2020 Jul; 31(31):315201. PubMed ID: 32303009
[TBL] [Abstract][Full Text] [Related]
8. Second harmonic generation and simplified bond hyperpolarizability model analyses on the intermixing of Si/SiGe stacked multilayers for gate-all-around structure.
Chen WT; Yen TY; Hung YH; Huang YH; Chiu SJ; Lo KY
Nanotechnology; 2023 Jan; 34(14):. PubMed ID: 36626806
[TBL] [Abstract][Full Text] [Related]
9. Quantum-confined direct band transitions in tensile strained Ge/SiGe quantum wells on silicon substrates.
Chen Y; Li C; Lai H; Chen S
Nanotechnology; 2010 Mar; 21(11):115207. PubMed ID: 20179329
[TBL] [Abstract][Full Text] [Related]
10. Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes.
Sun X; Liu J; Kimerling LC; Michel J
Opt Lett; 2009 Apr; 34(8):1198-200. PubMed ID: 19370116
[TBL] [Abstract][Full Text] [Related]
11. Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si.
Liu J; Sun X; Pan D; Wang X; Kimerling LC; Koch TL; Michel J
Opt Express; 2007 Sep; 15(18):11272-7. PubMed ID: 19547484
[TBL] [Abstract][Full Text] [Related]
12. Pure, single crystal Ge nanodots formed using a sandwich structure via pulsed UV excimer laser annealing.
Liao TW; Chen HM; Shen KY; Kuan CH
Nanotechnology; 2015 Apr; 26(16):165301. PubMed ID: 25815515
[TBL] [Abstract][Full Text] [Related]
13. Tensile-strained Ge/SiGe quantum-well photodetectors on silicon substrates with extended infrared response.
Chang GE; Chen SW; Cheng HH
Opt Express; 2016 Aug; 24(16):17562-71. PubMed ID: 27505727
[TBL] [Abstract][Full Text] [Related]
14. Hexagonal-Ge Nanostructures with Direct-Bandgap Emissions in a Si-Based Light-Emitting Metasurface.
Zhang N; Yan J; Wang L; Zhang J; Zhang Z; Miao T; Zheng C; Jiang Z; Hu H; Zhong Z
ACS Nano; 2024 Jan; 18(1):328-336. PubMed ID: 38147566
[TBL] [Abstract][Full Text] [Related]
15. [Influence of annealing and sputtering ambience on the photoluminescence of silicon nitride thin films].
Jia XY; Xu Z; Zhao SL; Zhang FJ; Zhao DW; Tang Y; Li Y; Zhou CL; Wang WJ
Guang Pu Xue Yu Guang Pu Fen Xi; 2008 Nov; 28(11):2494-7. PubMed ID: 19271474
[TBL] [Abstract][Full Text] [Related]
16. Effects of thermal annealing on the structural and optical properties of carbon-implanted SiO2.
Poudel PR; Paramo JA; Poudel PP; Diercks DR; Strzhemechny YM; Rout B; McDaniel FD
J Nanosci Nanotechnol; 2012 Mar; 12(3):1835-42. PubMed ID: 22754988
[TBL] [Abstract][Full Text] [Related]
17. Promising features of low-temperature grown Ge nanostructures on Si(001) substrates.
Wang Z; Wang S; Yin Y; Liu T; Lin D; Li DH; Yang X; Jiang Z; Zhong Z
Nanotechnology; 2017 Mar; 28(11):115701. PubMed ID: 28140355
[TBL] [Abstract][Full Text] [Related]
18. [Influence of strain in the Si cap layer of Si/SiGe heterostructure on its Raman spectra].
Xiao QH; Tu HL
Guang Pu Xue Yu Guang Pu Fen Xi; 2005 May; 25(5):719-22. PubMed ID: 16128072
[TBL] [Abstract][Full Text] [Related]
19. Interfacial intermixing of Ge/Si core-shell nanowires by thermal annealing.
Zhang X; Jevasuwan W; Fukata N
Nanoscale; 2020 Apr; 12(14):7572-7576. PubMed ID: 31970348
[TBL] [Abstract][Full Text] [Related]
20. Bright photoluminescence from ordered arrays of SiGe nanowires grown on Si(111).
Lockwood DJ; Rowell NL; Benkouider A; Ronda A; Favre L; Berbezier I
Beilstein J Nanotechnol; 2014; 5():2498-504. PubMed ID: 25671145
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]