220 related articles for article (PubMed ID: 31429263)
1. Ultralow Schottky Barrier Height Achieved by Using Molybdenum Disulfide/Dielectric Stack for Source/Drain Contact.
Kim SH; Han KH; Park E; Kim SG; Yu HY
ACS Appl Mater Interfaces; 2019 Sep; 11(37):34084-34090. PubMed ID: 31429263
[TBL] [Abstract][Full Text] [Related]
2. Schottky Barrier Height Modulation Using Interface Characteristics of MoS
Kim SH; Han KH; Kim GS; Kim SG; Kim J; Yu HY
ACS Appl Mater Interfaces; 2019 Feb; 11(6):6230-6237. PubMed ID: 30663311
[TBL] [Abstract][Full Text] [Related]
3. Effective Schottky Barrier Height Lowering of Metal/n-Ge with a TiO
Kim GS; Kim SW; Kim SH; Park J; Seo Y; Cho BJ; Shin C; Shim JH; Yu HY
ACS Appl Mater Interfaces; 2016 Dec; 8(51):35419-35425. PubMed ID: 27977113
[TBL] [Abstract][Full Text] [Related]
4. Schottky Barrier Height Engineering for Electrical Contacts of Multilayered MoS
Kim GS; Kim SH; Park J; Han KH; Kim J; Yu HY
ACS Nano; 2018 Jun; 12(6):6292-6300. PubMed ID: 29851473
[TBL] [Abstract][Full Text] [Related]
5. Clean Interface Contact Using a ZnO Interlayer for Low-Contact-Resistance MoS
Jang J; Kim Y; Chee SS; Kim H; Whang D; Kim GH; Yun SJ
ACS Appl Mater Interfaces; 2020 Jan; 12(4):5031-5039. PubMed ID: 31891246
[TBL] [Abstract][Full Text] [Related]
6. Novel Conductive Filament Metal-Interlayer-Semiconductor Contact Structure for Ultralow Contact Resistance Achievement.
Kim SH; Kim GS; Park J; Lee C; Kim H; Kim J; Shim JH; Yu HY
ACS Appl Mater Interfaces; 2018 Aug; 10(31):26378-26386. PubMed ID: 30003786
[TBL] [Abstract][Full Text] [Related]
7. Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides.
Kim C; Moon I; Lee D; Choi MS; Ahmed F; Nam S; Cho Y; Shin HJ; Park S; Yoo WJ
ACS Nano; 2017 Feb; 11(2):1588-1596. PubMed ID: 28088846
[TBL] [Abstract][Full Text] [Related]
8. Insertion of an ultrathin Al
Zheng S; Lu H; Liu H; Liu D; Robertson J
Nanoscale; 2019 Mar; 11(11):4811-4821. PubMed ID: 30816375
[TBL] [Abstract][Full Text] [Related]
9. A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application.
Kaufmann IR; Zerey O; Meyers T; Reker J; Vidor F; Hilleringmann U
Nanomaterials (Basel); 2021 Apr; 11(5):. PubMed ID: 33946278
[TBL] [Abstract][Full Text] [Related]
10. Non-invasively improving the Schottky barrier of MoS
Fang Q; Zhao X; Yuan L; Wang B; Xia C; Ma F
Phys Chem Chem Phys; 2021 Jul; 23(27):14796-14802. PubMed ID: 34198313
[TBL] [Abstract][Full Text] [Related]
11. Improved Contacts and Device Performance in MoS
Andrews K; Bowman A; Rijal U; Chen PY; Zhou Z
ACS Nano; 2020 May; 14(5):6232-6241. PubMed ID: 32320204
[TBL] [Abstract][Full Text] [Related]
12. Impact of Synthesized MoS
Perini CJ; Basnet P; West MP; Vogel EM
ACS Appl Mater Interfaces; 2018 Nov; 10(46):39860-39871. PubMed ID: 30350938
[TBL] [Abstract][Full Text] [Related]
13. Schottky Barrier Height and Image Force Lowering in Monolayer MoS
Vaknin Y; Dagan R; Rosenwaks Y
Nanomaterials (Basel); 2020 Nov; 10(12):. PubMed ID: 33255993
[TBL] [Abstract][Full Text] [Related]
14. Ambipolar MoS
Giannazzo F; Fisichella G; Greco G; Di Franco S; Deretzis I; La Magna A; Bongiorno C; Nicotra G; Spinella C; Scopelliti M; Pignataro B; Agnello S; Roccaforte F
ACS Appl Mater Interfaces; 2017 Jul; 9(27):23164-23174. PubMed ID: 28603968
[TBL] [Abstract][Full Text] [Related]
15. Schottky Barrier Height of Pd/MoS
Dong H; Gong C; Addou R; McDonnell S; Azcatl A; Qin X; Wang W; Wang W; Hinkle CL; Wallace RM
ACS Appl Mater Interfaces; 2017 Nov; 9(44):38977-38983. PubMed ID: 29035026
[TBL] [Abstract][Full Text] [Related]
16. Promising Approach for High-Performance MoS
Su J; Feng LP; Zheng X; Hu C; Lu H; Liu Z
ACS Appl Mater Interfaces; 2017 Nov; 9(46):40940-40948. PubMed ID: 29083857
[TBL] [Abstract][Full Text] [Related]
17. Modulation of the transport properties of metal/MoS
Guo R; Su J; Zhang P; He F; Lin Z; Zhang J; Chang J; Hao Y
Nanotechnology; 2020 Nov; 31(48):485204. PubMed ID: 32931467
[TBL] [Abstract][Full Text] [Related]
18. In-Depth Analysis on Self Alignment Effect of the Fermi-Level Using Graphene on Both n- and p-Type Semiconductors.
Song S; Kim SH; Han KH; Kim HJ; Yu HY
ACS Appl Mater Interfaces; 2023 Nov; ():. PubMed ID: 38033204
[TBL] [Abstract][Full Text] [Related]
19. Junction-Structure-Dependent Schottky Barrier Inhomogeneity and Device Ideality of Monolayer MoS
Moon BH; Han GH; Kim H; Choi H; Bae JJ; Kim J; Jin Y; Jeong HY; Joo MK; Lee YH; Lim SC
ACS Appl Mater Interfaces; 2017 Mar; 9(12):11240-11246. PubMed ID: 28266221
[TBL] [Abstract][Full Text] [Related]
20. The Effect of Interfacial Dipoles on the Metal-Double Interlayers-Semiconductor Structure and Their Application in Contact Resistivity Reduction.
Kim SW; Kim SH; Kim GS; Choi C; Choi R; Yu HY
ACS Appl Mater Interfaces; 2016 Dec; 8(51):35614-35620. PubMed ID: 27966860
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]