These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

230 related articles for article (PubMed ID: 31438670)

  • 1. Impact of Polyimide Film Thickness for Improving the Mechanical Robustness of Stretchable InGaZnO Thin-Film Transistors Prepared on Wavy-Dimensional Elastomer Substrates.
    Jang HW; Kim S; Yoon SM
    ACS Appl Mater Interfaces; 2019 Sep; 11(37):34076-34083. PubMed ID: 31438670
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Wearable 1 V operating thin-film transistors with solution-processed metal-oxide semiconductor and dielectric films fabricated by deep ultra-violet photo annealing at low temperature.
    Yu BS; Jeon JY; Kang BC; Lee W; Kim YH; Ha TJ
    Sci Rep; 2019 Jun; 9(1):8416. PubMed ID: 31182751
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Buckled Thin-Film Transistors and Circuits on Soft Elastomers for Stretchable Electronics.
    Cantarella G; Vogt C; Hopf R; Münzenrieder N; Andrianakis P; Petti L; Daus A; Knobelspies S; Büthe L; Tröster G; Salvatore GA
    ACS Appl Mater Interfaces; 2017 Aug; 9(34):28750-28757. PubMed ID: 28795567
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Fabrication of Stretchable Organic-Inorganic Hybrid Thin-Film Transistors on Polyimide Stiff-Island Structures.
    Jung SW; Koo JB; Park CW; Na BS; Oh JY; Lee SS
    J Nanosci Nanotechnol; 2015 Oct; 15(10):7526-30. PubMed ID: 26726364
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Effects of Deposition Temperature on the Device Characteristics of Oxide Thin-Film Transistors Using In-Ga-Zn-O Active Channels Prepared by Atomic-Layer Deposition.
    Yoon SM; Seong NJ; Choi K; Seo GH; Shin WC
    ACS Appl Mater Interfaces; 2017 Jul; 9(27):22676-22684. PubMed ID: 28653825
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Vertically Graded Oxygen Deficiency for Improving Electrical Characteristics and Stability of Indium Gallium Zinc Oxide Thin-Film Transistors.
    Yoon CS; Kim HT; Kim MS; Yoo H; Park JW; Choi DH; Kim D; Kim HJ
    ACS Appl Mater Interfaces; 2021 Jan; 13(3):4110-4116. PubMed ID: 33448781
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Organic/Inorganic Hybrid Buffer in InGaZnO Transistors under Repetitive Bending Stress for High Electrical and Mechanical Stability.
    Han KL; Han JH; Kim BS; Jeong HJ; Choi JM; Hwang JE; Oh S; Park JS
    ACS Appl Mater Interfaces; 2020 Jan; 12(3):3784-3791. PubMed ID: 31878779
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Effect of the electrode materials on the drain-bias stress instabilities of In-Ga-Zn-O thin-film transistors.
    Bak JY; Yang S; Ryu MK; Ko Park SH; Hwang CS; Yoon SM
    ACS Appl Mater Interfaces; 2012 Oct; 4(10):5369-74. PubMed ID: 22974265
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Improvement of Electrical Characteristics and Stability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using Nitrocellulose Passivation Layer.
    Shin KY; Tak YJ; Kim WG; Hong S; Kim HJ
    ACS Appl Mater Interfaces; 2017 Apr; 9(15):13278-13285. PubMed ID: 28299924
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Highly Robust Neutral Plane Oxide TFTs Withstanding 0.25 mm Bending Radius for Stretchable Electronics.
    Kim YH; Lee E; Um JG; Mativenga M; Jang J
    Sci Rep; 2016 May; 6():25734. PubMed ID: 27165715
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Effect of Static and Rotating Magnetic Fields on Low-Temperature Fabrication of InGaZnO Thin-Film Transistors.
    Park JW; Tak YJ; Na JW; Lee H; Kim WG; Kim HJ
    ACS Appl Mater Interfaces; 2018 May; 10(19):16613-16622. PubMed ID: 29682960
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Elastomer-infiltrated vertically aligned carbon nanotube film-based wavy-configured stretchable conductors.
    Shin UH; Jeong DW; Kim SH; Lee HW; Kim JM
    ACS Appl Mater Interfaces; 2014 Aug; 6(15):12909-14. PubMed ID: 25006992
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor.
    Xiao X; Zhang L; Shao Y; Zhou X; He H; Zhang S
    ACS Appl Mater Interfaces; 2018 Aug; 10(31):25850-25857. PubMed ID: 29235839
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Influence of Passivation Layers on Positive Gate Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors.
    Zhou Y; Dong C
    Micromachines (Basel); 2018 Nov; 9(11):. PubMed ID: 30453615
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Low-Temperature Fabrication of Robust, Transparent, and Flexible Thin-Film Transistors with a Nanolaminated Insulator.
    Kwon JH; Park J; Lee MK; Park JW; Jeon Y; Shin JB; Nam M; Kim CK; Choi YK; Choi KC
    ACS Appl Mater Interfaces; 2018 May; 10(18):15829-15840. PubMed ID: 29672018
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses.
    Wang D; Zhao W; Li H; Furuta M
    Materials (Basel); 2018 Apr; 11(4):. PubMed ID: 29621154
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Comparative studies on vertical-channel charge-trap memory thin-film transistors using In-Ga-Zn-O active channels deposited by sputtering and atomic layer depositions.
    Kim HR; Kim GH; Seong NJ; Choi KJ; Kim SK; Yoon SM
    Nanotechnology; 2020 Oct; 31(43):435702. PubMed ID: 32647094
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Facile fabrication of wire-type indium gallium zinc oxide thin-film transistors applicable to ultrasensitive flexible sensors.
    Kim YG; Tak YJ; Kim HJ; Kim WG; Yoo H; Kim HJ
    Sci Rep; 2018 Apr; 8(1):5546. PubMed ID: 29615757
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Channel Shape Effects on Device Instability of Amorphous Indium-Gallium-Zinc Oxide Thin Film Transistors.
    Seo SG; Yu SJ; Kim SY; Jeong J; Jin SH
    Micromachines (Basel); 2020 Dec; 12(1):. PubMed ID: 33375000
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Electrical Performance and Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors with Buried-Channel Layers.
    Zhang Y; Xie H; Dong C
    Micromachines (Basel); 2019 Nov; 10(11):. PubMed ID: 31739504
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 12.