199 related articles for article (PubMed ID: 31459636)
1. Graphene Oxide as a Dielectric and Charge Trap Element in Pentacene-Based Organic Thin-Film Transistors for Nonvolatile Memory.
Sarkar KJ; Pal B; Banerji P
ACS Omega; 2019 Feb; 4(2):4312-4319. PubMed ID: 31459636
[TBL] [Abstract][Full Text] [Related]
2. The Characteristics of Transparent Non-Volatile Memory Devices Employing Si-Rich SiO
Park JH; Shin MH; Yi JS
Nanomaterials (Basel); 2019 May; 9(5):. PubMed ID: 31121917
[TBL] [Abstract][Full Text] [Related]
3. High-Performance ZnPc Thin Film-Based Photosensitive Organic Field-Effect Transistors: Influence of Multilayer Dielectric Systems and Thin Film Growth Structure.
Dey A; Singh A; Das D; Iyer PK
ACS Omega; 2017 Mar; 2(3):1241-1248. PubMed ID: 31457500
[TBL] [Abstract][Full Text] [Related]
4. Improved Memory Properties of Graphene Oxide-Based Organic Memory Transistors.
Al-Shawi A; Alias M; Sayers P; Mabrook MF
Micromachines (Basel); 2019 Sep; 10(10):. PubMed ID: 31557870
[TBL] [Abstract][Full Text] [Related]
5. Organic transistor memory with a charge storage molecular double-floating-gate monolayer.
Tseng CW; Huang DC; Tao YT
ACS Appl Mater Interfaces; 2015 May; 7(18):9767-75. PubMed ID: 25875747
[TBL] [Abstract][Full Text] [Related]
6. Mechanistic Analysis of Embedded Copper Oxide in Organic Thin-Film Transistors with Controllable Threshold Voltage.
Nie G; Dong B; Wu S; Zhan S; Xu Y; Sheng W; Liu Y; Wu X
ACS Omega; 2019 May; 4(5):8506-8511. PubMed ID: 31459940
[TBL] [Abstract][Full Text] [Related]
7. Sol-Gel PMMA-ZrO
Alvarado-Beltrán CG; Almaral-Sánchez JL; Mejia I; Quevedo-López MA; Ramirez-Bon R
ACS Omega; 2017 Oct; 2(10):6968-6974. PubMed ID: 31457280
[TBL] [Abstract][Full Text] [Related]
8. Thin-film transistors with a graphene oxide nanocomposite channel.
Jilani SM; Gamot TD; Banerji P
Langmuir; 2012 Dec; 28(48):16485-9. PubMed ID: 23153213
[TBL] [Abstract][Full Text] [Related]
9. Organic field-effect transistor memory devices using discrete ferritin nanoparticle-based gate dielectrics.
Kim BJ; Ko Y; Cho JH; Cho J
Small; 2013 Nov; 9(22):3784-91. PubMed ID: 23666682
[TBL] [Abstract][Full Text] [Related]
10. A novel polysilicon field-enhanced nanowire thin-film transistor with the TiN-hafnia-nitride-vacuum-silicon (THNVAS) structure for nonvolatile memory applications.
Wu CY; Liao TC; Liu YT; Yu MH; Cheng HC
J Nanosci Nanotechnol; 2012 Jul; 12(7):5276-82. PubMed ID: 22966557
[TBL] [Abstract][Full Text] [Related]
11. High-Performance Nonvolatile Organic Field-Effect Transistor Memory Based on Organic Semiconductor Heterostructures of Pentacene/P13/Pentacene as Both Charge Transport and Trapping Layers.
Li W; Guo F; Ling H; Zhang P; Yi M; Wang L; Wu D; Xie L; Huang W
Adv Sci (Weinh); 2017 Aug; 4(8):1700007. PubMed ID: 28852619
[TBL] [Abstract][Full Text] [Related]
12. Organic one-transistor-type nonvolatile memory gated with thin ionic liquid-polymer film for low voltage operation.
Hwang SK; Park TJ; Kim KL; Cho SM; Jeong BJ; Park C
ACS Appl Mater Interfaces; 2014 Nov; 6(22):20179-87. PubMed ID: 25341965
[TBL] [Abstract][Full Text] [Related]
13. Single-Walled Carbon-Nanotubes-Based Organic Memory Structures.
Fakher S; Nejm R; Ayesh A; Al-Ghaferi A; Zeze D; Mabrook M
Molecules; 2016 Sep; 21(9):. PubMed ID: 27598112
[TBL] [Abstract][Full Text] [Related]
14. Charge trapping devices using a bilayer oxide structure.
Kim M; Sundararaman R; Tiwari S; Lee JW
J Nanosci Nanotechnol; 2012 Jan; 12(1):423-7. PubMed ID: 22523996
[TBL] [Abstract][Full Text] [Related]
15. Characteristics of Reduced Graphene Oxide Quantum Dots for a Flexible Memory Thin Film Transistor.
Kim YH; Lee EY; Lee HH; Seo TS
ACS Appl Mater Interfaces; 2017 May; 9(19):16375-16380. PubMed ID: 28445035
[TBL] [Abstract][Full Text] [Related]
16. Blending effect of 6,13-bis(triisopropylsilylethynyl) pentacene-graphene composite layers for flexible thin film transistors with a polymer gate dielectric.
Basu S; Adriyanto F; Wang YH
Nanotechnology; 2014 Feb; 25(8):085201. PubMed ID: 24492205
[TBL] [Abstract][Full Text] [Related]
17. Graphene-graphene oxide floating gate transistor memory.
Jang S; Hwang E; Lee JH; Park HS; Cho JH
Small; 2015 Jan; 11(3):311-8. PubMed ID: 25163911
[TBL] [Abstract][Full Text] [Related]
18. Preparation of Polyimide/Graphene Oxide Nanocomposite and Its Application to Nonvolatile Resistive Memory Device.
Choi JY; Yu HC; Lee J; Jeon J; Im J; Jang J; Jin SW; Kim KK; Cho S; Chung CM
Polymers (Basel); 2018 Aug; 10(8):. PubMed ID: 30960826
[TBL] [Abstract][Full Text] [Related]
19. Organic nonvolatile memory devices with charge trapping multilayer graphene film.
Ji Y; Choe M; Cho B; Song S; Yoon J; Ko HC; Lee T
Nanotechnology; 2012 Mar; 23(10):105202. PubMed ID: 22361891
[TBL] [Abstract][Full Text] [Related]
20. Enhanced non-volatile memory characteristics with quattro-layer graphene nanoplatelets vs. 2.85-nm Si nanoparticles with asymmetric Al2O 3/HfO 2 tunnel oxide.
El-Atab N; Turgut BB; Okyay AK; Nayfeh M; Nayfeh A
Nanoscale Res Lett; 2015 Dec; 10(1):957. PubMed ID: 26055483
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]