These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

169 related articles for article (PubMed ID: 31459928)

  • 1. Evolution of the Length and Radius of Catalyst-Free III-V Nanowires Grown by Selective Area Epitaxy.
    Dubrovskii VG
    ACS Omega; 2019 May; 4(5):8400-8405. PubMed ID: 31459928
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Modeling Catalyst-Free Growth of III-V Nanowires: Empirical and Rigorous Approaches.
    Dubrovskii VG
    Nanomaterials (Basel); 2023 Apr; 13(7):. PubMed ID: 37049346
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Theory of MBE Growth of Nanowires on Reflecting Substrates.
    Dubrovskii VG
    Nanomaterials (Basel); 2022 Jan; 12(2):. PubMed ID: 35055270
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Modeling the Radial Growth of Self-Catalyzed III-V Nanowires.
    Dubrovskii VG; Leshchenko ED
    Nanomaterials (Basel); 2022 May; 12(10):. PubMed ID: 35630920
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Theory of MBE Growth of Nanowires on Adsorbing Substrates: The Role of the Shadowing Effect on the Diffusion Transport.
    Dubrovskii VG
    Nanomaterials (Basel); 2022 Mar; 12(7):. PubMed ID: 35407180
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Reconsideration of Nanowire Growth Theory at Low Temperatures.
    Dubrovskii VG
    Nanomaterials (Basel); 2021 Sep; 11(9):. PubMed ID: 34578691
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Catalyst-free selective-area epitaxy of GaAs nanowires by metal-organic chemical vapor deposition using triethylgallium.
    Kim H; Ren D; Farrell AC; Huffaker DL
    Nanotechnology; 2018 Feb; 29(8):085601. PubMed ID: 29300185
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Selective area growth of in-plane InAs nanowires and nanowire networks on Si substrates by molecular-beam epitaxy.
    Liu L; Wen L; He F; Zhuo R; Pan D; Zhao J
    Nanotechnology; 2023 Nov; 35(6):. PubMed ID: 37944189
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Electrical and Optical Properties of Au-Catalyzed GaAs Nanowires Grown on Si (111) Substrate by Molecular Beam Epitaxy.
    Wang CY; Hong YC; Ko ZJ; Su YW; Huang JH
    Nanoscale Res Lett; 2017 Dec; 12(1):290. PubMed ID: 28438011
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Foreign-catalyst-free growth of InAs/InSb axial heterostructure nanowires on Si (111) by molecular-beam epitaxy.
    So H; Pan D; Li L; Zhao J
    Nanotechnology; 2017 Mar; 28(13):135704. PubMed ID: 28256450
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Circumventing the Uncertainties of the Liquid Phase in the Compositional Control of VLS III-V Ternary Nanowires Based on Group V Intermix.
    Dubrovskii VG
    Nanomaterials (Basel); 2024 Jan; 14(2):. PubMed ID: 38251170
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Suppression of axial growth by boron incorporation in GaAs nanowires grown by self-catalyzed molecular beam epitaxy.
    Lancaster S; Groiss H; Zederbauer T; Andrews AM; MacFarland D; Schrenk W; Strasser G; Detz H
    Nanotechnology; 2019 Feb; 30(6):065602. PubMed ID: 30523852
    [TBL] [Abstract][Full Text] [Related]  

  • 13. The effect of Sn addition on GaAs nanowire grown by vapor-liquid-solid growth mechanism.
    Gao H; Lysevych M; Tan HH; Jagadish C; Zou J
    Nanotechnology; 2018 Nov; 29(46):465601. PubMed ID: 30179858
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Record pure zincblende phase in GaAs nanowires down to 5 nm in radius.
    Gil E; Dubrovskii VG; Avit G; André Y; Leroux C; Lekhal K; Grecenkov J; Trassoudaine A; Castelluci D; Monier G; Ramdani RM; Robert-Goumet C; Bideux L; Harmand JC; Glas F
    Nano Lett; 2014 Jul; 14(7):3938-44. PubMed ID: 24873917
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Hybrid III-V/IV Nanowires: High-Quality Ge Shell Epitaxy on GaAs Cores.
    Zeng H; Yu X; Fonseka HA; Gott JA; Tang M; Zhang Y; Boras G; Xu J; Sanchez AM; Liu H
    Nano Lett; 2018 Oct; 18(10):6397-6403. PubMed ID: 30205011
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Si Doping of Vapor-Liquid-Solid GaAs Nanowires: n-Type or p-Type?
    Hijazi H; Monier G; Gil E; Trassoudaine A; Bougerol C; Leroux C; Castellucci D; Robert-Goumet C; Hoggan PE; André Y; Isik Goktas N; LaPierre RR; Dubrovskii VG
    Nano Lett; 2019 Jul; 19(7):4498-4504. PubMed ID: 31203632
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Thermodynamics of the Vapor-Liquid-Solid Growth of Ternary III-V Nanowires in the Presence of Silicon.
    Hijazi H; Zeghouane M; Dubrovskii VG
    Nanomaterials (Basel); 2021 Jan; 11(1):. PubMed ID: 33401772
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Can Nanowires Coalesce?
    Dubrovskii VG
    Nanomaterials (Basel); 2023 Oct; 13(20):. PubMed ID: 37887919
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Oscillations of As Concentration and Electron-to-Hole Ratio in Si-Doped GaAs Nanowires.
    Dubrovskii VG; Hijazi H
    Nanomaterials (Basel); 2020 Apr; 10(5):. PubMed ID: 32349326
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Catalyst-free growth of InAs nanowires on Si (111) by CBE.
    Gomes UP; Ercolani D; Sibirev NV; Gemmi M; Dubrovskii VG; Beltram F; Sorba L
    Nanotechnology; 2015 Oct; 26(41):415604. PubMed ID: 26404459
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 9.