These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

260 related articles for article (PubMed ID: 31556429)

  • 1. Programmable, electroforming-free TiO
    Srivastava S; Thomas JP; Leung KT
    Nanoscale; 2019 Oct; 11(39):18159-18168. PubMed ID: 31556429
    [TBL] [Abstract][Full Text] [Related]  

  • 2. High-Performance Single-Active-Layer Memristor Based on an Ultrananocrystalline Oxygen-Deficient TiO
    Srivastava S; Thomas JP; Heinig NF; Leung KT
    ACS Appl Mater Interfaces; 2017 Oct; 9(42):36989-36996. PubMed ID: 28975787
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Electroforming-Free, Flexible, and Reliable Resistive Random-Access Memory Based on an Ultrathin TaO
    Chen Y; Yan Y; Wu J; Wang C; Lin JY; Zhao JS; Hwang CS
    ACS Appl Mater Interfaces; 2020 Mar; 12(9):10681-10688. PubMed ID: 32043349
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Induced Complementary Resistive Switching in Forming-Free TiO
    Srivastava S; Thomas JP; Guan X; Leung KT
    ACS Appl Mater Interfaces; 2021 Sep; 13(36):43022-43029. PubMed ID: 34463478
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Forming-Free Tunable Analog Switching in WO
    Mahata C; Pyo J; Jeon B; Ismail M; Kang M; Kim S
    Materials (Basel); 2022 Dec; 15(24):. PubMed ID: 36556662
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Eradicating negative-Set behavior of TiO
    Ismail M; Hashmi A; Rana AM; Kim S
    Nanotechnology; 2020 Aug; 31(32):325201. PubMed ID: 32316002
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Forming-free and self-rectifying resistive switching of the simple Pt/TaOx/n-Si structure for access device-free high-density memory application.
    Gao S; Zeng F; Li F; Wang M; Mao H; Wang G; Song C; Pan F
    Nanoscale; 2015 Apr; 7(14):6031-8. PubMed ID: 25765948
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface.
    Prakash A; Maikap S; Chiu HC; Tien TC; Lai CS
    Nanoscale Res Lett; 2014 Mar; 9(1):125. PubMed ID: 24636463
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Low-Power Resistive Switching Characteristic in HfO
    Ding X; Feng Y; Huang P; Liu L; Kang J
    Nanoscale Res Lett; 2019 May; 14(1):157. PubMed ID: 31073774
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Multi-level characteristics of TiO
    Kwon S; Kim MJ; Chung KB
    Sci Rep; 2021 May; 11(1):9883. PubMed ID: 33972612
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Analog and Digital Bipolar Resistive Switching in Solution-Combustion-Processed NiO Memristor.
    Li Y; Chu J; Duan W; Cai G; Fan X; Wang X; Wang G; Pei Y
    ACS Appl Mater Interfaces; 2018 Jul; 10(29):24598-24606. PubMed ID: 29995376
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Reliable and Low-Power Multilevel Resistive Switching in TiO
    Xiao M; Musselman KP; Duley WW; Zhou YN
    ACS Appl Mater Interfaces; 2017 Feb; 9(5):4808-4817. PubMed ID: 28098978
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Bipolar electric-field enhanced trapping and detrapping of mobile donors in BiFeO3 memristors.
    You T; Du N; Slesazeck S; Mikolajick T; Li G; Bürger D; Skorupa I; Stöcker H; Abendroth B; Beyer A; Volz K; Schmidt OG; Schmidt H
    ACS Appl Mater Interfaces; 2014 Nov; 6(22):19758-65. PubMed ID: 25366867
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Analytical modelling of the transport in analog filamentary conductive-metal-oxide/HfO
    Falcone DF; Menzel S; Stecconi T; Galetta M; La Porta A; Offrein BJ; Bragaglia V
    Nanoscale Horiz; 2024 Apr; 9(5):775-784. PubMed ID: 38517375
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Electroforming-Free Bipolar Resistive Switching Memory Based on Magnesium Fluoride.
    Das NC; Kim M; Rani JR; Hong SM; Jang JH
    Micromachines (Basel); 2021 Aug; 12(9):. PubMed ID: 34577692
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Vacancy-Engineered Nickel Ferrite Forming-Free Low-Voltage Resistive Switches for Neuromorphic Circuits.
    R RK; Kalaboukhov A; Weng YC; Rathod KN; Johansson T; Lindblad A; Kamalakar MV; Sarkar T
    ACS Appl Mater Interfaces; 2024 Apr; 16(15):19225-19234. PubMed ID: 38579143
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface.
    Rahaman SZ; Maikap S; Tien TC; Lee HY; Chen WS; Chen FT; Kao MJ; Tsai MJ
    Nanoscale Res Lett; 2012 Jun; 7(1):345. PubMed ID: 22734564
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Reversible resistive switching behaviour in CVD grown, large area MoO
    Rahman F; Ahmed T; Walia S; Mayes E; Sriram S; Bhaskaran M; Balendhran S
    Nanoscale; 2018 Nov; 10(42):19711-19719. PubMed ID: 30141809
    [TBL] [Abstract][Full Text] [Related]  

  • 19. In situ control of oxygen vacancies in TiO₂ by atomic layer deposition for resistive switching devices.
    Park SJ; Lee JP; Jang JS; Rhu H; Yu H; You BY; Kim CS; Kim KJ; Cho YJ; Baik S; Lee W
    Nanotechnology; 2013 Jul; 24(29):295202. PubMed ID: 23799660
    [TBL] [Abstract][Full Text] [Related]  

  • 20. The Effect of Multi-Layer Stacking Sequence of TiO
    Kim M; Yoo K; Jeon SP; Park SK; Kim YH
    Micromachines (Basel); 2020 Jan; 11(2):. PubMed ID: 32019257
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 13.