These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

188 related articles for article (PubMed ID: 31573177)

  • 1. Artificially Fabricated Subgap States for Visible-Light Absorption in Indium-Gallium-Zinc Oxide Phototransistor with Solution-Processed Oxide Absorption Layer.
    Chung J; Tak YJ; Kim WG; Kang BH; Kim HJ
    ACS Appl Mater Interfaces; 2019 Oct; 11(42):38964-38972. PubMed ID: 31573177
    [TBL] [Abstract][Full Text] [Related]  

  • 2. High Photosensitive Indium-Gallium-Zinc Oxide Thin-Film Phototransistor with a Selenium Capping Layer for Visible-Light Detection.
    Yoo H; Kim WG; Kang BH; Kim HT; Park JW; Choi DH; Kim TS; Lim JH; Kim HJ
    ACS Appl Mater Interfaces; 2020 Mar; 12(9):10673-10680. PubMed ID: 32052953
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Novel Method for Fabricating Visible-Light Phototransistors Based on a Homojunction-Porous IGZO Thin Film Using Mechano-Chemical Treatment.
    Lee IS; Jung J; Choi DH; Jung S; Kwak K; Kim HJ
    ACS Appl Mater Interfaces; 2021 Aug; 13(30):35981-35989. PubMed ID: 34296603
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Simple Hydrogen Plasma Doping Process of Amorphous Indium Gallium Zinc Oxide-Based Phototransistors for Visible Light Detection.
    Kang BH; Kim WG; Chung J; Lee JH; Kim HJ
    ACS Appl Mater Interfaces; 2018 Feb; 10(8):7223-7230. PubMed ID: 29405061
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Polyimide-Doped Indium-Gallium-Zinc Oxide-Based Transparent and Flexible Phototransistor for Visible Light Detection.
    Kim KS; Kim MS; Chung J; Kim D; Lee IS; Kim HJ
    ACS Appl Mater Interfaces; 2022 May; 14(18):21150-21158. PubMed ID: 35482003
    [TBL] [Abstract][Full Text] [Related]  

  • 6. MoS2-InGaZnO Heterojunction Phototransistors with Broad Spectral Responsivity.
    Yang J; Kwak H; Lee Y; Kang YS; Cho MH; Cho JH; Kim YH; Jeong SJ; Park S; Lee HJ; Kim H
    ACS Appl Mater Interfaces; 2016 Apr; 8(13):8576-82. PubMed ID: 26989951
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Low-Power Phototransistor with Enhanced Visible-Light Photoresponse and Electrical Performances Using an IGZO/IZO Heterostructure.
    Kim YB; Jeong JH; Park MH; Yun JM; Ma JH; Ha HJ; Kang SJ; Kang SJ
    Materials (Basel); 2024 Jan; 17(3):. PubMed ID: 38591507
    [TBL] [Abstract][Full Text] [Related]  

  • 8. A visible-light phototransistor based on the heterostructure of ZnO and TiO
    Kim BJ; Jeong JH; Jung EY; Kim TY; Park S; Hong JA; Lee KM; Jeon W; Park Y; Kang SJ
    RSC Adv; 2021 Mar; 11(20):12051-12057. PubMed ID: 35423752
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Improvement in Performance and Stability of PbS QD/IGZO Phototransistors Through the Introduction of Ga
    Jeong YJ; Kim GB; Kim MJ; Oh J; Chang JH; Jeong JK
    ACS Appl Mater Interfaces; 2024 Jul; 16(28):36527-36538. PubMed ID: 38961586
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Structure-Property Relation in Organic-Metal Oxide Hybrid Phototransistors.
    Chen Z; Sheleg G; Shekhar H; Tessler N
    ACS Appl Mater Interfaces; 2020 Apr; 12(13):15430-15438. PubMed ID: 32134241
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Highly Transparent, Visible-Light Photodetector Based on Oxide Semiconductors and Quantum Dots.
    Shin SW; Lee KH; Park JS; Kang SJ
    ACS Appl Mater Interfaces; 2015 Sep; 7(35):19666-71. PubMed ID: 26293387
    [TBL] [Abstract][Full Text] [Related]  

  • 12. High-Performance Visible-Blind Ultraviolet Photodetector Based on IGZO TFT Coupled with p-n Heterojunction.
    Yu J; Javaid K; Liang L; Wu W; Liang Y; Song A; Zhang H; Shi W; Chang TC; Cao H
    ACS Appl Mater Interfaces; 2018 Mar; 10(9):8102-8109. PubMed ID: 29441792
    [TBL] [Abstract][Full Text] [Related]  

  • 13. High performance IGZO-based phototransistors by BN/BP interface engineering.
    Li D; Nan H; Mou P; Xu C; Shao F; Gu X; Ostrikov KK; Xiao S
    Nanotechnology; 2021 Jan; 32(2):025201. PubMed ID: 32957095
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Wide-spectral/dynamic-range skin-compatible phototransistors enabled by floated heterojunction structures with surface functionalized SWCNTs and amorphous oxide semiconductors.
    Hwang I; Kim J; Lee M; Lee MW; Kim HJ; Kwon HI; Hwang DK; Kim M; Yoon H; Kim YH; Park SK
    Nanoscale; 2017 Nov; 9(43):16711-16721. PubMed ID: 29067384
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Intense Pulsed Light Annealing Process of Indium-Gallium-Zinc-Oxide Semiconductors via Flash White Light Combined with Deep-UV and Near-Infrared Drying for High-Performance Thin-Film Transistors.
    Moon CJ; Kim HS
    ACS Appl Mater Interfaces; 2019 Apr; 11(14):13380-13388. PubMed ID: 30882197
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Boosting Visible Light Absorption of Metal-Oxide-Based Phototransistors via Heterogeneous In-Ga-Zn-O and CH
    Tak YJ; Kim DJ; Kim WG; Lee JH; Kim SJ; Kim JH; Kim HJ
    ACS Appl Mater Interfaces; 2018 Apr; 10(15):12854-12861. PubMed ID: 29578324
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Low-temperature fabrication of an HfO
    Hong S; Park SP; Kim YG; Kang BH; Na JW; Kim HJ
    Sci Rep; 2017 Nov; 7(1):16265. PubMed ID: 29176568
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Quasi Two-Dimensional Dye-Sensitized In2O3 Phototransistors for Ultrahigh Responsivity and Photosensitivity Photodetector Applications.
    Mottram AD; Lin YH; Pattanasattayavong P; Zhao K; Amassian A; Anthopoulos TD
    ACS Appl Mater Interfaces; 2016 Feb; 8(7):4894-902. PubMed ID: 26863603
    [TBL] [Abstract][Full Text] [Related]  

  • 19. The effect of annealing ambient on the characteristics of an indium-gallium-zinc oxide thin film transistor.
    Park S; Bang S; Lee S; Park J; Ko Y; Jeon H
    J Nanosci Nanotechnol; 2011 Jul; 11(7):6029-33. PubMed ID: 22121652
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Aqueous Solution Processing of Combustible Precursor Compounds into Amorphous Indium Gallium Zinc Oxide (IGZO) Semiconductors for Thin Film Transistor Applications.
    Sanctis S; Hoffmann RC; Koslowski N; Foro S; Bruns M; Schneider JJ
    Chem Asian J; 2018 Dec; 13(24):3912-3919. PubMed ID: 30426698
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 10.