These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

286 related articles for article (PubMed ID: 31624822)

  • 21. Polarization Switching Kinetics in Thin Ferroelectric HZO Films.
    Kondratyuk E; Chouprik A
    Nanomaterials (Basel); 2022 Nov; 12(23):. PubMed ID: 36500749
    [TBL] [Abstract][Full Text] [Related]  

  • 22. A Comparative Study on the Ferroelectric Performances in Atomic Layer Deposited Hf
    Kim BS; Hyun SD; Moon T; Do Kim K; Lee YH; Park HW; Lee YB; Roh J; Kim BY; Kim HH; Park MH; Hwang CS
    Nanoscale Res Lett; 2020 Apr; 15(1):72. PubMed ID: 32266598
    [TBL] [Abstract][Full Text] [Related]  

  • 23. A rhombohedral ferroelectric phase in epitaxially strained Hf
    Wei Y; Nukala P; Salverda M; Matzen S; Zhao HJ; Momand J; Everhardt AS; Agnus G; Blake GR; Lecoeur P; Kooi BJ; Íñiguez J; Dkhil B; Noheda B
    Nat Mater; 2018 Dec; 17(12):1095-1100. PubMed ID: 30349031
    [TBL] [Abstract][Full Text] [Related]  

  • 24. Retention Improvement of HZO-Based Ferroelectric Capacitors with TiO
    Koroleva AA; Chernikova AG; Zarubin SS; Korostylev E; Khakimov RR; Zhuk MY; Markeev AM
    ACS Omega; 2022 Dec; 7(50):47084-47095. PubMed ID: 36570284
    [TBL] [Abstract][Full Text] [Related]  

  • 25. A new approach to achieving strong ferroelectric properties in TiN/Hf
    Kim H; Kashir A; Oh S; Hwang H
    Nanotechnology; 2021 Jan; 32(5):055703. PubMed ID: 33053526
    [TBL] [Abstract][Full Text] [Related]  

  • 26. A Complementary Metal Oxide Semiconductor Process-Compatible Ferroelectric Tunnel Junction.
    Ambriz-Vargas F; Kolhatkar G; Broyer M; Hadj-Youssef A; Nouar R; Sarkissian A; Thomas R; Gomez-Yáñez C; Gauthier MA; Ruediger A
    ACS Appl Mater Interfaces; 2017 Apr; 9(15):13262-13268. PubMed ID: 28368099
    [TBL] [Abstract][Full Text] [Related]  

  • 27. High-Speed Switching and Giant Electroresistance in an Epitaxial Hf
    Du X; Sun H; Wang H; Li J; Yin Y; Li X
    ACS Appl Mater Interfaces; 2022 Jan; 14(1):1355-1361. PubMed ID: 34958206
    [TBL] [Abstract][Full Text] [Related]  

  • 28. Ferroelectric Second-Order Memristor.
    Mikheev V; Chouprik A; Lebedinskii Y; Zarubin S; Matveyev Y; Kondratyuk E; Kozodaev MG; Markeev AM; Zenkevich A; Negrov D
    ACS Appl Mater Interfaces; 2019 Sep; 11(35):32108-32114. PubMed ID: 31402643
    [TBL] [Abstract][Full Text] [Related]  

  • 29. Mechanical Polarization Switching in Hf
    Guan Z; Li YK; Zhao YF; Peng Y; Han G; Zhong N; Xiang PH; Chu JH; Duan CG
    Nano Lett; 2022 Jun; 22(12):4792-4799. PubMed ID: 35639474
    [TBL] [Abstract][Full Text] [Related]  

  • 30. Ferroelectric Electroresistance after a Breakdown in Epitaxial Hf
    Long X; Tan H; Sánchez F; Fina I; Fontcuberta J
    ACS Appl Electron Mater; 2023 Feb; 5(2):740-747. PubMed ID: 36873260
    [TBL] [Abstract][Full Text] [Related]  

  • 31. Improved polarization and endurance in ferroelectric Hf
    Song T; Tan H; Estandía S; Gàzquez J; Gich M; Dix N; Fina I; Sánchez F
    Nanoscale; 2022 Feb; 14(6):2337-2343. PubMed ID: 35088065
    [TBL] [Abstract][Full Text] [Related]  

  • 32. First direct observation of the built-in electric field and oxygen vacancy migration in ferroelectric Hf
    Chen L; Liang Z; Shao S; Huang Q; Tang K; Huang R
    Nanoscale; 2023 Apr; 15(15):7014-7022. PubMed ID: 36970751
    [TBL] [Abstract][Full Text] [Related]  

  • 33. Effect of a ZrO
    Song JN; Oh MJ; Yoon CB
    Materials (Basel); 2023 Feb; 16(5):. PubMed ID: 36903074
    [TBL] [Abstract][Full Text] [Related]  

  • 34. Data retention and low voltage operation of Al
    Shekhawat A; Walters G; Yang N; Guo J; Nishida T; Moghaddam S
    Nanotechnology; 2020 Sep; 31(39):39LT01. PubMed ID: 32541100
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Low Operating Voltage, Improved Breakdown Tolerance, and High Endurance in Hf
    Toprasertpong K; Tahara K; Hikosaka Y; Nakamura K; Saito H; Takenaka M; Takagi S
    ACS Appl Mater Interfaces; 2022 Nov; 14(45):51137-51148. PubMed ID: 36319949
    [TBL] [Abstract][Full Text] [Related]  

  • 36. Mesoscopic-scale grain formation in HfO
    Kobayashi M; Wu J; Sawabe Y; Takuya S; Hiramoto T
    Nano Converg; 2022 Nov; 9(1):50. PubMed ID: 36370230
    [TBL] [Abstract][Full Text] [Related]  

  • 37. Comprehensive study of high pressure annealing on the ferroelectric properties of Hf
    Oh C; Tewari A; Kim K; Kumar US; Shin C; Ahn M; Jeon S
    Nanotechnology; 2019 Dec; 30(50):505204. PubMed ID: 31426039
    [TBL] [Abstract][Full Text] [Related]  

  • 38. Ferroelectricity induced double-direction conductance modulation in Hf
    Chen B; Wu S; Yu X; Tang M; Zhao G; Tai L; Zhan X; Chen J
    Nanotechnology; 2022 Sep; 33(49):. PubMed ID: 36044816
    [TBL] [Abstract][Full Text] [Related]  

  • 39. Preparation and characterization of ferroelectric Hf
    Lee YH; Kim HJ; Moon T; Kim KD; Hyun SD; Park HW; Lee YB; Park MH; Hwang CS
    Nanotechnology; 2017 Jul; 28(30):305703. PubMed ID: 28562366
    [TBL] [Abstract][Full Text] [Related]  

  • 40. Enhancement of ferroelectricity and homogeneity of orthorhombic phase in Hf
    Zou Z; Tian G; Wang D; Zhang Y; Wang J; Li Y; Tao R; Fan Z; Chen D; Zeng M; Gao X; Dai JY; Lu X; Liu JM
    Nanotechnology; 2021 May; 32(33):. PubMed ID: 33910189
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 15.