These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
191 related articles for article (PubMed ID: 31635035)
1. Transparent ZnO Thin-Film Deposition by Spray Pyrolysis for High-Performance Metal-Oxide Field-Effect Transistors. Cho J; Hwang S; Ko DH; Chung S Materials (Basel); 2019 Oct; 12(20):. PubMed ID: 31635035 [TBL] [Abstract][Full Text] [Related]
2. Lanthanum Doping in Zinc Oxide for Highly Reliable Thin-Film Transistors on Flexible Substrates by Spray Pyrolysis. Bukke RN; Saha JK; Mude NN; Kim Y; Lee S; Jang J ACS Appl Mater Interfaces; 2020 Aug; 12(31):35164-35174. PubMed ID: 32657115 [TBL] [Abstract][Full Text] [Related]
3. Triple-Stack ZnO/AlZnO/YZnO Heterojunction Oxide Thin-Film Transistors by Spray Pyrolysis for High Mobility and Excellent Stability. Saha JK; Billah MM; Jang J ACS Appl Mater Interfaces; 2021 Aug; 13(31):37350-37362. PubMed ID: 34325511 [TBL] [Abstract][Full Text] [Related]
4. Remarkable Stability Improvement of ZnO TFT with Al Saha JK; Bukke RN; Mude NN; Jang J Nanomaterials (Basel); 2020 May; 10(5):. PubMed ID: 32438551 [TBL] [Abstract][Full Text] [Related]
5. Significant improvement of spray pyrolyzed ZnO thin film by precursor optimization for high mobility thin film transistors. Saha JK; Bukke RN; Mude NN; Jang J Sci Rep; 2020 Jun; 10(1):8999. PubMed ID: 32488171 [TBL] [Abstract][Full Text] [Related]
6. Highly Transparent and Surface-Plasmon-Enhanced Visible-Photodetector Based on Zinc Oxide Thin-Film Transistors with Heterojunction Structure. Wang CJ; You HC; Lin K; Ou JH; Chao KH; Ko FH Materials (Basel); 2019 Nov; 12(21):. PubMed ID: 31694214 [TBL] [Abstract][Full Text] [Related]
7. ZnO-based thin film transistors employing aluminum titanate gate dielectrics deposited by spray pyrolysis at ambient air. Afouxenidis D; Mazzocco R; Vourlias G; Livesley PJ; Krier A; Milne WI; Kolosov O; Adamopoulos G ACS Appl Mater Interfaces; 2015 Apr; 7(13):7334-41. PubMed ID: 25774574 [TBL] [Abstract][Full Text] [Related]
8. Low-Temperature and Solution-Processable Zinc Oxide Transistors for Transparent Electronics. Jiang L; Li J; Huang K; Li S; Wang Q; Sun Z; Mei T; Wang J; Zhang L; Wang N; Wang X ACS Omega; 2017 Dec; 2(12):8990-8996. PubMed ID: 31457423 [TBL] [Abstract][Full Text] [Related]
10. Carrier Concentration and Threshold Voltage Variability of Amorphous Oxide Semiconductors Using Vacuum Rapid Thermal Annealing. Shin JW; Cho WJ J Nanosci Nanotechnol; 2020 Jul; 20(7):4276-4281. PubMed ID: 31968457 [TBL] [Abstract][Full Text] [Related]
11. Rational Design of ZnO:H/ZnO Bilayer Structure for High-Performance Thin-Film Transistors. Abliz A; Huang CW; Wang J; Xu L; Liao L; Xiao X; Wu WW; Fan Z; Jiang C; Li J; Guo S; Liu C; Guo T ACS Appl Mater Interfaces; 2016 Mar; 8(12):7862-8. PubMed ID: 26977526 [TBL] [Abstract][Full Text] [Related]
12. Solution-processable LaZrOx/SiO2 gate dielectric at low temperature of 180 °C for high-performance metal oxide field-effect transistors. Je SY; Son BG; Kim HG; Park MY; Do LM; Choi R; Jeong JK ACS Appl Mater Interfaces; 2014 Nov; 6(21):18693-703. PubMed ID: 25285585 [TBL] [Abstract][Full Text] [Related]
13. Investigation of the Electrical Characteristics of Bilayer ZnO/In₂O₃ Thin-Film Transistors Fabricated by Solution Processing. Lee H; Zhang X; Kim JW; Kim EJ; Park J Materials (Basel); 2018 Oct; 11(11):. PubMed ID: 30373128 [TBL] [Abstract][Full Text] [Related]
14. Indium oxide thin-film transistors processed at low temperature via ultrasonic spray pyrolysis. Faber H; Lin YH; Thomas SR; Zhao K; Pliatsikas N; McLachlan MA; Amassian A; Patsalas PA; Anthopoulos TD ACS Appl Mater Interfaces; 2015 Jan; 7(1):782-90. PubMed ID: 25490965 [TBL] [Abstract][Full Text] [Related]
15. Pulsed direct flame deposition and thermal annealing of transparent amorphous indium zinc oxide films as active layers in field effect transistors. Kilian D; Polster S; Vogeler I; Jank MP; Frey L; Peukert W ACS Appl Mater Interfaces; 2014 Aug; 6(15):12245-51. PubMed ID: 25029269 [TBL] [Abstract][Full Text] [Related]
16. Ferroelectric Wide-Bandgap Metal Halide Perovskite Field-Effect Transistors: Toward Transparent Electronics. Xia J; Qiu X; Liu Y; Chen PA; Guo J; Wei H; Ding J; Xie H; Lv Y; Li F; Li W; Liao L; Hu Y Adv Sci (Weinh); 2023 Apr; 10(10):e2300133. PubMed ID: 36703612 [TBL] [Abstract][Full Text] [Related]
17. Optimization of a Solution-Processed SiO2 Gate Insulator by Plasma Treatment for Zinc Oxide Thin Film Transistors. Jeong Y; Pearson C; Kim HG; Park MY; Kim H; Do LM; Petty MC ACS Appl Mater Interfaces; 2016 Jan; 8(3):2061-70. PubMed ID: 26704352 [TBL] [Abstract][Full Text] [Related]
18. Transparent Structures for ZnO Thin Film Paper Transistors Fabricated by Pulsed Electron Beam Deposition. Gherendi F; Dobrin D; Nistor M Micromachines (Basel); 2024 Feb; 15(2):. PubMed ID: 38398993 [TBL] [Abstract][Full Text] [Related]
19. Study of Atmospheric-Pressure Plasma Enhanced Chemical Vapor Deposition Fabricated Indium Gallium Zinc Oxide Thin Film Transistors with Chen YM; Wu CH; Chang KM; Zhang YX; Xu N; Yu TY; Chin A J Nanosci Nanotechnol; 2020 Jul; 20(7):4110-4113. PubMed ID: 31968427 [TBL] [Abstract][Full Text] [Related]
20. Sol-gel-derived transparent metal oxide flexible field effect transistors. Londhe P; Athawale A; Chaure NB Environ Sci Pollut Res Int; 2021 Jan; 28(4):3928-3941. PubMed ID: 32894447 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]