These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
167 related articles for article (PubMed ID: 31720663)
1. Transfer of transition-metal dichalcogenide circuits onto arbitrary substrates for flexible device applications. Lee H; Lee K; Kim Y; Ji H; Choi J; Kim M; Ahn JP; Kim GT Nanoscale; 2019 Nov; 11(45):22118-22124. PubMed ID: 31720663 [TBL] [Abstract][Full Text] [Related]
2. Highly Flexible Hybrid CMOS Inverter Based on Si Nanomembrane and Molybdenum Disulfide. Das T; Chen X; Jang H; Oh IK; Kim H; Ahn JH Small; 2016 Nov; 12(41):5720-5727. PubMed ID: 27608439 [TBL] [Abstract][Full Text] [Related]
3. Preparation and applications of mechanically exfoliated single-layer and multilayer MoS₂ and WSe₂ nanosheets. Li H; Wu J; Yin Z; Zhang H Acc Chem Res; 2014 Apr; 47(4):1067-75. PubMed ID: 24697842 [TBL] [Abstract][Full Text] [Related]
4. A high-performance complementary inverter based on transition metal dichalcogenide field-effect transistors. Cho AJ; Park KC; Kwon JY Nanoscale Res Lett; 2015; 10():115. PubMed ID: 25852410 [TBL] [Abstract][Full Text] [Related]
5. Low Power Consumption Complementary Inverters with n-MoS2 and p-WSe2 Dichalcogenide Nanosheets on Glass for Logic and Light-Emitting Diode Circuits. Jeon PJ; Kim JS; Lim JY; Cho Y; Pezeshki A; Lee HS; Yu S; Min SW; Im S ACS Appl Mater Interfaces; 2015 Oct; 7(40):22333-40. PubMed ID: 26399664 [TBL] [Abstract][Full Text] [Related]
6. Impact of Al McVay E; Zubair A; Lin Y; Nourbakhsh A; Palacios T ACS Appl Mater Interfaces; 2020 Dec; 12(52):57987-57995. PubMed ID: 33320539 [TBL] [Abstract][Full Text] [Related]
8. Realizing an Omega-Shaped Gate MoS Zhao DH; Tian ZL; Liu H; Gu ZH; Zhu H; Chen L; Sun QQ; Zhang DW ACS Appl Mater Interfaces; 2020 Mar; 12(12):14308-14314. PubMed ID: 32100523 [TBL] [Abstract][Full Text] [Related]
9. Polarity control in a single transition metal dichalcogenide (TMD) transistor for homogeneous complementary logic circuits. Shim J; Jang SW; Lim JH; Kim H; Kang DH; Kim KH; Seo S; Heo K; Shin C; Yu HY; Lee S; Ko DH; Park JH Nanoscale; 2019 Jul; 11(27):12871-12877. PubMed ID: 31243409 [TBL] [Abstract][Full Text] [Related]
11. Benchmarking monolayer MoS Sebastian A; Pendurthi R; Choudhury TH; Redwing JM; Das S Nat Commun; 2021 Jan; 12(1):693. PubMed ID: 33514710 [TBL] [Abstract][Full Text] [Related]
12. Effect of Dielectric Interface on the Performance of MoS Li X; Xiong X; Li T; Li S; Zhang Z; Wu Y ACS Appl Mater Interfaces; 2017 Dec; 9(51):44602-44608. PubMed ID: 29199423 [TBL] [Abstract][Full Text] [Related]
13. Determining layer number of two-dimensional flakes of transition-metal dichalcogenides by the Raman intensity from substrates. Li XL; Qiao XF; Han WP; Zhang X; Tan QH; Chen T; Tan PH Nanotechnology; 2016 Apr; 27(14):145704. PubMed ID: 26906625 [TBL] [Abstract][Full Text] [Related]
14. Impact of Organic Molecule-Induced Charge Transfer on Operating Voltage Control of Both n-MoS Cho Y; Park JH; Kim M; Jeong Y; Yu S; Lim JY; Yi Y; Im S Nano Lett; 2019 Apr; 19(4):2456-2463. PubMed ID: 30855970 [TBL] [Abstract][Full Text] [Related]
15. Zero-Bias Power-Detector Circuits based on MoS Reato E; Palacios P; Uzlu B; Saeed M; Grundmann A; Wang Z; Schneider DS; Wang Z; Heuken M; Kalisch H; Vescan A; Radenovic A; Kis A; Neumaier D; Negra R; Lemme MC Adv Mater; 2022 Dec; 34(48):e2108469. PubMed ID: 35075681 [TBL] [Abstract][Full Text] [Related]
16. Facile Fabrication of a Two-Dimensional TMD/Si Heterojunction Photodiode by Atmospheric-Pressure Plasma-Enhanced Chemical Vapor Deposition. Kim Y; Kwon S; Seo EJ; Nam JH; Jang HY; Kwon SH; Kwon JD; Kim DW; Cho B ACS Appl Mater Interfaces; 2018 Oct; 10(42):36136-36143. PubMed ID: 30261138 [TBL] [Abstract][Full Text] [Related]
17. Ultralow power complementary inverter circuits using axially doped p- and n-channel Si nanowire field effect transistors. Van NH; Lee JH; Whang D; Kang DJ Nanoscale; 2016 Jun; 8(23):12022-8. PubMed ID: 27240692 [TBL] [Abstract][Full Text] [Related]
18. Three-Dimensional Flexible Complementary Metal-Oxide-Semiconductor Logic Circuits Based On Two-Layer Stacks of Single-Walled Carbon Nanotube Networks. Zhao Y; Li Q; Xiao X; Li G; Jin Y; Jiang K; Wang J; Fan S ACS Nano; 2016 Feb; 10(2):2193-202. PubMed ID: 26768020 [TBL] [Abstract][Full Text] [Related]
19. Large-Scale Complementary Logic Circuit Enabled by Al Das T; Youn S; Seo JE; Yang E; Chang J ACS Appl Mater Interfaces; 2023 Sep; 15(38):45116-45127. PubMed ID: 37713451 [TBL] [Abstract][Full Text] [Related]
20. Charge-Transfer-Induced p-Type Channel in MoS Min SW; Yoon M; Yang SJ; Ko KR; Im S ACS Appl Mater Interfaces; 2018 Jan; 10(4):4206-4212. PubMed ID: 29318882 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]