165 related articles for article (PubMed ID: 31721740)
1. Local atomic structure analysis of GaN surfaces via X-ray absorption spectroscopy by detecting Auger electrons with low energies.
Isomura N; Kikuta D; Takahashi N; Kosaka S; Kataoka K
J Synchrotron Radiat; 2019 Nov; 26(Pt 6):1951-1955. PubMed ID: 31721740
[TBL] [Abstract][Full Text] [Related]
2. Surface EXAFS via differential electron yield.
Isomura N; Murai T; Nomoto T; Kimoto Y
J Synchrotron Radiat; 2017 Mar; 24(Pt 2):445-448. PubMed ID: 28244438
[TBL] [Abstract][Full Text] [Related]
3. A new EXAFS method for the local structure analysis of low-Z elements.
Isomura N; Kamada M; Nonaka T; Nakamura E; Takano T; Sugiyama H; Kimoto Y
J Synchrotron Radiat; 2016 Jan; 23(1):281-5. PubMed ID: 26698075
[TBL] [Abstract][Full Text] [Related]
4. Local atomic structure analysis around Mg atom doped in GaN by X-ray absorption spectroscopy and spectrum simulations.
Isomura N; Kimoto Y
J Synchrotron Radiat; 2021 Jul; 28(Pt 4):1114-1118. PubMed ID: 34212874
[TBL] [Abstract][Full Text] [Related]
5. Determination of atomic local order in thyroid hormones by extended x-ray absorption fine structure [EXAFS] for radiation dose estimates.
Orton BR; Vorsatz D; Macovei D
Acta Oncol; 1996; 35(7):895-9. PubMed ID: 9004769
[TBL] [Abstract][Full Text] [Related]
6. Local structures of nanocrystalline GaN studied by XAFS.
Li Z; Wei S; Wang Y; Zhang X; Lu K; Chen X
J Synchrotron Radiat; 2001 Mar; 8(Pt 2):830-2. PubMed ID: 11512947
[TBL] [Abstract][Full Text] [Related]
7. Extended x-ray-absorption fine structure-Auger process for surface structure analysis: Theoretical considerations of a proposed experiment.
Landman U; Adams DL
Proc Natl Acad Sci U S A; 1976 Aug; 73(8):2550-3. PubMed ID: 16592339
[TBL] [Abstract][Full Text] [Related]
8. Monitoring Ultrafast Chemical Dynamics by Time-Domain X-ray Photo- and Auger-Electron Spectroscopy.
Gessner O; Gühr M
Acc Chem Res; 2016 Jan; 49(1):138-45. PubMed ID: 26641490
[TBL] [Abstract][Full Text] [Related]
9. Effects of electron back-scattering in observations of cross-sectioned GaAs/AlAs superlattice with auger electron spectroscopy.
Suzuki M; Urushihara N; Sanada N; Paul DF; Bryan S; Hammond JS
Anal Sci; 2010; 26(2):203-8. PubMed ID: 20145321
[TBL] [Abstract][Full Text] [Related]
10. An x-ray absorption spectroscopy study of Ni-Mn-Ga shape memory alloys.
Sathe VG; Dubey A; Banik S; Barman SR; Olivi L
J Phys Condens Matter; 2013 Jan; 25(4):046001. PubMed ID: 23238326
[TBL] [Abstract][Full Text] [Related]
11. Nanotribological Properties of Ga- and N-Faced Bulk Gallium Nitride Surfaces Determined by Nanoscratch Experiments.
Guo J; Qiu C; Zhu H; Wang Y
Materials (Basel); 2019 Aug; 12(17):. PubMed ID: 31438492
[TBL] [Abstract][Full Text] [Related]
12. Radiative auger effect and extended X-ray emission fine structure (EXEFS).
Kawai J
Anal Sci; 2005 Jul; 21(7):733-5. PubMed ID: 16038486
[TBL] [Abstract][Full Text] [Related]
13. Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100 °C Using Sequential Surface Reactions.
Sprenger JK; Cavanagh AS; Sun H; Wahl KJ; Roshko A; George SM
Chem Mater; 2016; 28():. PubMed ID: 31092972
[TBL] [Abstract][Full Text] [Related]
14. Structural and chemical characterization of Mn doped GaN nanowires by X-ray absorption spectroscopy.
Seong HK; Kim U; Kim MH; Lee HH; Lee DR; Kim JY; Choi HJ
J Nanosci Nanotechnol; 2009 Nov; 9(11):6772-6. PubMed ID: 19908598
[TBL] [Abstract][Full Text] [Related]
15. DNA strand breaks by direct energy deposition by Auger and photo-electrons ejected from DNA constituent atoms following K-shell photoabsorption.
Watanabe R; Yokoya A; Fujii K; Saito K
Int J Radiat Biol; 2004; 80(11-12):823-32. PubMed ID: 15764389
[TBL] [Abstract][Full Text] [Related]
16. Local structure of uncapped and capped InGaN/GaN quantum dots.
Piskorska-Hommel E; Schmidt T; Siebert M; Yamaguchi T; Hommel D; Falta J; Cross JO
J Synchrotron Radiat; 2009 Jul; 16(Pt 4):494-7. PubMed ID: 19535863
[TBL] [Abstract][Full Text] [Related]
17. Platinum nanoparticles on gallium nitride surfaces: effect of semiconductor doping on nanoparticle reactivity.
Schäfer S; Wyrzgol SA; Caterino R; Jentys A; Schoell SJ; Hävecker M; Knop-Gericke A; Lercher JA; Sharp ID; Stutzmann M
J Am Chem Soc; 2012 Aug; 134(30):12528-35. PubMed ID: 22738117
[TBL] [Abstract][Full Text] [Related]
18. Effective Suppression of Amorphous Ga
Deng K; Wang X; Huang S; Li P; Jiang Q; Yin H; Fan J; Wei K; Zheng Y; Shi J; Liu X
ACS Appl Mater Interfaces; 2023 May; 15(20):25058-25065. PubMed ID: 37162360
[TBL] [Abstract][Full Text] [Related]
19. Wet chemical functionalization of III-V semiconductor surfaces: alkylation of gallium arsenide and gallium nitride by a Grignard reaction sequence.
Peczonczyk SL; Mukherjee J; Carim AI; Maldonado S
Langmuir; 2012 Mar; 28(10):4672-82. PubMed ID: 22372474
[TBL] [Abstract][Full Text] [Related]
20. Quantitative adsorption and local structures of gallium(III) at the water-alpha-FeOOH interface.
Persson P; Zivkovic K; Sjöberg S
Langmuir; 2006 Feb; 22(5):2096-104. PubMed ID: 16489794
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]